Image sensor
An image sensor may include a pixel isolation structure disposed in a semiconductor substrate to define a first pixel region, first and second photoelectric conversion regions disposed in the first pixel region, and a separation structure disposed in the first pixel region, between the first and second photoelectric conversion regions. The pixel isolation structure may include first pixel isolation portions, which are spaced apart from each other in a second direction and extend lengthwise in a first direction, and second pixel isolation portions, which are spaced apart from each other in the first direction and extend lengthwise in the second direction to connect to the first pixel isolation portions. The separation structure may be spaced apart from the pixel isolation structure in the first direction and the second direction, and is at least partly at the same level as the first and second photoelectric conversion regions in a third direction perpendicular to the first direction and the second direction.
1. An image sensor, comprising:
a pixel isolation structure disposed in pixel sensor array of a semiconductor substrate to define a first pixel region used to sense a first light, a second pixel region used to sense a second light, and a third pixel region used to sense a third light;
a first separation structure disposed in the first pixel region;
a second separation structure disposed in the second pixel region; and
a third separation structure disposed in the third pixel region;
wherein a wavelength of the second light is longer than a wavelength of the first light and is shorter than a wavelength of the third light,
wherein a shape of the first separation structure, a shape of the second separation structure, and a shape of the third separation structure are different from each other, and
wherein the pixel isolation structure comprises first protruding portions, which protrude toward a center of the third pixel region and face each other in a first direction perpendicular to a second direction.
2. The image sensor of claim 1 , wherein the second separation structure is bar-shaped when viewed in a plan view and extends lengthwise in the first direction, and
wherein the third separation structure is an impurity-doped region formed in the semiconductor substrate.
3. The image sensor of claim 1 ,
wherein the second separation structure comprises a first separation portion, which extends lengthwise in the first direction and a second separation portion, which extends lengthwise in the second direction,
wherein the first separation portion is longer than the second separation portion, and
wherein the third separation structure is an impurity-doped region formed in the semiconductor substrate.
4. The image sensor of claim 1 , wherein the pixel isolation structure further comprises second protruding portions, which protrude toward the center of the third pixel region and face each other in the second direction.
5. The image sensor of claim 2 or claim 3 , wherein the first separation structure is cross-shaped.
6. The image sensor of claim 5 , wherein the pixel isolation structure further comprises second protruding portions, which protrude toward the center of the third pixel region and face each other in the second direction.
7. An image sensor, comprising:
a pixel isolation structure disposed in a semiconductor substrate to define a first pixel region used to sense a first light, a second pixel region used to sense a second light and a third pixel region used to sense a third light;
a first separation structure disposed in the first pixel region;
a second separation structure disposed in the second pixel region; and
a third separation structure disposed in the third pixel region;
wherein a wavelength of the second light is longer than a wavelength of the first light and is shorter than a wavelength of the third light,
wherein a shape of the second separation structure is different from a shape of the first separation structure and a shape of the third separation structure,
wherein at least one of the separation structures is spaced apart from the pixel isolation structure, and
wherein the pixel isolation structure comprises first protruding portions, which protrude toward a center of the third pixel region and face each other in a first direction, which is perpendicular to a second direction.
8. The image sensor of claim 7 ,
wherein the second separation structure is bar-shaped when viewed in a plan view and extends lengthwise in the first direction, and
wherein the third separation structure is an impurity-doped region formed in the semiconductor substrate.
9. The image sensor of claim 7 ,
wherein the second separation structure comprises a first separation portion, which extends lengthwise in the first direction and a second separation portion, which extends lengthwise in the second direction,
wherein the first separation portion is longer than the second separation portion, and
wherein the third separation structure is an impurity-doped region formed in the semiconductor substrate.
10. The image sensor of claim 7 , wherein the pixel isolation structure further comprises second protruding portions, which protrude toward the center of the third pixel region and face each other in the second direction.
11. The image sensor of claim 7 ,
wherein the pixel isolation structure has a first depth from a first surface of the semiconductor substrate,
wherein the separation structures, which are spaced apart from the pixel isolation structure, have a second depth, and
wherein the second depth is smaller than the first depth.
12. The image sensor of claim 7 ,
wherein the pixel isolation structure has a first width, and
wherein each separation structure, which is spaced apart from the pixel isolation structure, has a second width smaller than the first width.
13. The image sensor of claim 1 , wherein at least one of the first separation structure, the second separation structure, and the third separation structure are formed of a material that fills a trench, and at least another of the first separation structure, the second separation structure, and the third separation structure are formed of an impurity-doped region formed in the semiconductor substrate.