IP Library › Granted Patent US 11,955,628
Granted Patent B2
US 11,955,628 · App. 17/729,725 · Granted Apr 9, 2024

Method of producing guest-free silicon clathrate, apparatus for producing guest-free silicon clathrate

Inventor: Nobuhira Abe (Toyota, JP)
Assignee: TOYOTA JIDOSHA KABUSHIKI KAISHA
H01M4/386B01J19/122B01J19/28C01B33/037B01J2219/1203C01P2006/40
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Quick Facts
Patent No.
US 11,955,628
App. No.
17/729,725
Granted
Apr 9, 2024
Kind
B2
Abstract

[Problem] To improve productivity of guest-free silicon clathrates [Solution] A method of producing a guest-free silicon clathrate includes a synthesizing step of performing a heat treatment on a mixture containing Si as a material serving as a host and a material serving as a guest to synthesize a silicon clathrate compound; and a guest removing step of irradiating the silicon clathrate compound contained in a container with an electromagnetic wave to remove the guest while suctioning gas inside the container.

Claims (9)

1. A method of producing a guest-free silicon clathrate, comprising:

a synthesizing step of performing a heat treatment on a mixture containing Si as a material serving as a host and a material serving as a guest to synthesize a silicon clathrate compound;

a stirring step of stirring the silicon clathrate compound contained in a container, performed by using a protrusion on an inner wall surface of the container;

a guest removing step of irradiating the silicon clathrate compound contained in the container with an electromagnetic wave from an outside of the container to remove the guest while suctioning gas inside the container and while rotating the container, wherein the container is made of transparent quartz glass; and

an adsorbing step of adsorbing the removed guest using a cooling member and an adsorbent.

2. The method of producing a guest-free silicon clathrate according to claim 1 , further comprising:

mixing the silicon clathrate compound and a Li source after the synthesizing step and synthesizing a silicon clathrate compound containing Li;

forming voids by removing Li from the silicon clathrate compound containing Li to obtain a silicon clathrate compound having the voids; and

performing the guest removing step on the silicon clathrate compound having the voids.

Assignments (1)
ASSIGNMENT OF ASSIGNOR'S INTEREST Recorded Apr 26, 2022
From: ABE, NOBUHIRA
To: TOYOTA JIDOSHA KABUSHIKI KAISHA
Reel/Frame 059737/0240 →
Priority Claims (1)
JP 2021-094096 · Jun 4, 2021 · national
Continuity (1)
Related Publication 20220393159A1 · Dec 8, 2022
Cited By (1)
US 12,300,812