Indium containing magnetic garnet materials
Disclosed are embodiments of synthetic garnet materials for use in radiofrequency applications. In some embodiments, increased amounts of gadolinium can be added into specific sites in the crystal structure of the synthetic garnet by incorporating indium, a trivalent element. By including both indium and increased amounts of gadolinium, the dielectric constant can be improved. Thus, embodiments of the disclosed material can be advantageous in both above and below resonance applications, such as for isolators and circulators.
1. A synthetic garnet material comprising a structure including bismuth, calcium, gadolinium, hafnium, iron, and indium, the synthetic garnet material having a dielectric constant value of at least 35 and the chemical formula Bi x Ca s+y Gd z Y 3-s-x-y-z Fe 5-r-s-y In r Hf s Zr y O 12 , 0<x≤2.5, 0.3<r≤0.7, and 0<z≤1.0.
2. The synthetic garnet material of claim 1 wherein the synthetic garnet material has a dielectric loss below 0.00250.
3. The synthetic garnet material of claim 1 wherein the hafnium sits on an octahedral site.
4. The synthetic garnet material of claim 1 wherein the synthetic garnet material has a dielectric constant of at least 37.
5. A method of manufacturing a synthetic garnet material having a dielectric constant of at least 35, the method comprising:
blending a raw material including oxides and/or carbonites; and
calcining the blended materials to form a synthetic garnet material having a crystal structure including bismuth, calcium, gadolinium, hafnium, iron, and indium and having a dielectric constant of at least 35 and the chemical formula Bi x Ca s+y Gd z Y 3-s-x-y-z Fe 5-r-s-y In r Hf s Zr y O 12 , 0<x≤2.5, 0.3<r≤0.7, and 0<z≤1.0.
6. The method of claim 5 further comprising forming an isolator or circulator from the synthetic garnet material.
7. The method of claim 5 wherein the synthetic garnet material has a dielectric loss below 0.00250.
8. The method of claim 5 further comprising incorporating the synthetic garnet material into a radio frequency device.
9. The method of claim 8 further comprising incorporating the radio frequency device into an antenna.
10. The method of claim 5 wherein the hafnium sits on an octahedral site.
11. The method of claim 5 wherein the synthetic garnet material has a dielectric constant of at least 37.
12. A radiofrequency device comprising:
a synthetic garnet material including a structure including bismuth, calcium, gadolinium, hafnium, iron, and indium, the synthetic garnet material having a dielectric constant value of at least 35 and the chemical formula Bi x Ca s+y Gd z Y 3-s-x-y-z Fe 5-r-s-y In r Hf s Zr y O 12 , 0<x≤2.5, 0.3<r≤0.7, and 0<z≤1.0.
13. The radiofrequency device of claim 12 wherein the radiofrequency device is incorporated into an antenna.
14. The radiofrequency device of claim 12 wherein the radiofrequency device is an isolator or circulator.
15. The radiofrequency device of claim 12 wherein the synthetic garnet material has a dielectric loss below 0.00250.
16. The radiofrequency device of claim 12 wherein the hafnium sits on an octahedral site.
17. The radiofrequency device of claim 12 wherein the synthetic garnet material has a dielectric constant of at least 37.