Semiconductor device
A semiconductor device capable of charging that is less likely to cause deterioration of a power storage device is provided. The amount of a charging current is adjusted in accordance with the ambient temperature. Charging under low-temperature environments is performed with a reduced charging current. When the ambient temperature is too low or too high, the charging is stopped. Measurement of the ambient temperature is performed with a memory element using an oxide semiconductor. The use of a memory element using an oxide semiconductor enables measurement of the ambient temperature and retention of the temperature information to be performed at the same time.
1. A semiconductor device comprising a first memory element, a second memory element, a comparison circuit, and a current adjustment circuit,
wherein the first memory element is configured to retain reference temperature information,
wherein the second memory element comprises a capacitor and a first transistor comprising an oxide semiconductor in a first semiconductor layer,
wherein the second memory element is configured to measure ambient temperature, and to retain the ambient temperature as ambient temperature information between one electrode of the capacitor and one of a source electrode and a drain electrode of the first transistor due to a resistance change of the oxide semiconductor,
wherein the comparison circuit is configured to determine an operation of the current adjustment circuit by comparing the reference temperature information and the ambient temperature information, and
wherein the current adjustment circuit is configured to supply a current to a secondary battery.
2. The semiconductor device according to claim 1 , further comprising a plurality of the first memory elements,
wherein each of the first memory elements is configured to retain reference temperature information different from each other.
3. The semiconductor device according to claim 1 ,
wherein the first semiconductor layer comprises one or both of indium and zinc.
4. The semiconductor device according to claim 1 ,
wherein the first memory element comprises a second transistor comprising an oxide semiconductor in a second semiconductor layer.
5. The semiconductor device according to claim 4 ,
wherein the second semiconductor layer comprises one or both of indium and zinc.
6. The semiconductor device according to claim 1 ,
wherein the secondary battery is a lithium-ion secondary battery.