Power module for operating an electric vehicle drive with a reduced leakage inductance
A power module for operating an electric vehicle drive may include one or more of the following: a plurality of semiconductor components; an intermediate circuit capacitor connected in parallel to the semiconductor components; a heatsink for the removal of heat generated by the semiconductor components, where the heatsink is located between the semiconductor components and the intermediate circuit capacitor; and an intermediate circuit line that electrically connects the intermediate circuit capacitor to the semiconductor components. The intermediate circuit line may extend perpendicular to a direction of flow for the coolant in the heatsink on a side of the semiconductor components facing away from the heatsink.
1. A power module for operating an electric vehicle drive, comprising:
a plurality of semiconductor components;
an intermediate circuit capacitor connected in parallel to the semiconductor components;
a heatsink for a removal of heat generated by the semiconductor components, wherein the heatsink is located between the semiconductor components and the intermediate circuit capacitor; and
an intermediate circuit line that electrically connects the intermediate circuit capacitor to the semiconductor components,
wherein a first portion of the intermediate circuit line extends perpendicular to a direction of flow for a coolant in the heatsink on a first side of the semiconductor components, and the first side of the semiconductor components faces away from the heatsink,
wherein a second portion of the intermediate circuit line extends perpendicular to the flow of the coolant in the heatsink on a first side of the heatsink, and the first side of the heatsink faces away from the semiconductor components, and
wherein the intermediate circuit line forms a loop that at least partially encompasses a portion of the semiconductor components and a segment assigned to this portion of the semiconductor components.
2. The power module according to claim 1 , wherein the semiconductor components comprise a plurality of first halfbridges, each of which is assigned to one of a plurality of phases, wherein the first halfbridges are placed such that they are parallel to the direction of flow for the coolant.
3. The power module according to claim 2 , wherein, in addition to the first halfbridges, the semiconductor components contain a second halfbridge, which is connected in parallel to the first halfbridge, wherein the first halfbridge and second halfbridge are perpendicular to the direction of flow for the coolant.
4. The power module according to claim 3 , wherein, in addition to the first halfbridges, the semiconductor components have a third halfbridge, which is connected in parallel to the first and second halfbridges, wherein the first halfbridges, second halfbridges and third halfbridges are perpendicular to the direction of flow for the coolant.
5. The power module according to claim 4 , wherein at least a third contact is located in an edge region of the third halfbridge, which electrically connects one or more of the semiconductor components in the third halfbridge to the intermediate circuit line.
6. The power module according to claim 3 , wherein at least one second contact is located in an edge region of the second halfbridge, which electrically connects one or more of the semiconductor components in the second halfbridge to the intermediate circuit line.
7. The power module according to claim 2 , wherein at least one first contact is located in an edge region of the first halfbridge, which electrically connects one or more of the semiconductor components in the first halfbridge to the intermediate circuit line.
8. The power module according to claim 1 , wherein the semiconductor components have at least two halfbridges perpendicular to the direction of flow for the coolant, wherein there is a contact in an edge region of the two halfbridges, which electrically connects the two halfbridges with the intermediate circuit line.
9. An inverter, comprising:
a power module for operating an electric vehicle drive,
wherein the power module includes a plurality of semiconductor components,
wherein the power module includes an intermediate circuit capacitor connected in parallel to the semiconductor components,
wherein the power module includes a heatsink for a removal of heat generated by the semiconductor components, wherein the heatsink is located between the semiconductor components and the intermediate circuit capacitor,
wherein the power module includes an intermediate circuit line that electrically connects the intermediate circuit capacitor to the semiconductor components,
wherein a first portion of the intermediate circuit line extends perpendicular to a direction of flow for a coolant in the heatsink on a first side of the semiconductor components, and the first side of the semiconductor components faces away from the heatsink,
wherein a second portion of the intermediate circuit line extends perpendicular to the flow of the coolant in the heatsink on a first side of the heatsink, and the first side of the heatsink faces away from the semiconductor components, and
wherein the intermediate circuit line forms a loop that at least partially encompasses a portion of the semiconductor components and a segment assigned to this portion of the semiconductor components.
10. The inverter according to claim 9 , wherein the semiconductor components comprise a plurality of first halfbridges, each of which is assigned to one of a plurality of phases, wherein the first halfbridges are placed such that they are parallel to the direction of flow for the coolant.
11. The inverter according to claim 10 , wherein, in addition to the first halfbridges, the semiconductor components contain a second halfbridge, which is connected in parallel to the first halfbridge, wherein the first halfbridge and second halfbridge are perpendicular to the direction of flow for the coolant.
12. The inverter according to claim 11 , wherein, in addition to the first halfbridges, the semiconductor components have a third halfbridge, which is connected in parallel to the first and second halfbridges, wherein the first halfbridges, second halfbridges and third halfbridges are perpendicular to the direction of flow for the coolant.
13. The inverter according to claim 12 , wherein at least a third contact is located in an edge region of the third halfbridge, which electrically connects one or more of the semiconductor components in the third halfbridge to the intermediate circuit line.
14. The inverter according to claim 10 , wherein at least one first contact is located in an edge region of the first halfbridge, which electrically connects one or more of the semiconductor components in the first halfbridge to the intermediate circuit line.
15. The inverter according to claim 11 , wherein at least one second contact is located in an edge region of the second halfbridge, which electrically connects one or more of the semiconductor components in the second halfbridge to the intermediate circuit line.
16. The inverter according to claim 9 , wherein the semiconductor components have at least two halfbridges perpendicular to the direction of flow for the coolant, wherein there is a contact in an edge region of the two halfbridges, which electrically connects the two halfbridges with the intermediate circuit line.