Precursor solution for thin film deposition and thin film forming method using same
Proposed is a precursor composition for forming a metal film including a zirconium compound represented by any one of Chemical Formulas 1 to 3 and a hafnium compound represented by any one of Chemical Formulas 4 to 6.
1. A precursor composition for forming a metal film, comprising a zirconium compound represented by any one of Chemical Formula 1 to Chemical Formula 3 below and a hafnium compound represented by any one of Chemical Formula 4 to Chemical Formula 6 below:
in Chemical Formulas 1 to 6, R 1 to R 5 are each independently a hydrogen atom or a C 1 -C 6 alkyl group, L is a linker comprising Si or C 1 -C 3 , and each of X 1 to X 3 is a C 1 -C 5 alkyl group, —NR 6 R 7 , —OR 8 , or a cyclopentadienyl group with or without a substituent, in which R 6 to R 8 are each independently a C 1 -C 6 alkyl group.
2. The precursor composition of claim 1 , further comprising a solvent.
3. The precursor composition of claim 2 , wherein the solvent is at least one selected from a C 1 -C 16 saturated or unsaturated hydrocarbon, ketone, ether, glyme, ester, tetrahydrofuran, or tertiary amine.
4. The precursor composition of claim 2 , wherein an amount of the solvent is 0.1 to 99 wt % based on a total weight of the precursor composition.
5. The precursor composition of claim 1 , wherein the zirconium compound and the hafnium compound are mixed at a weight ratio of 0.1:99.9 to 99.9:0.1.
6. A method of forming a metal film, comprising depositing the precursor composition of claim 1 on a substrate.
7. The method of claim 6 , wherein the precursor composition further comprises a solvent.
8. The method of claim 6 , wherein an amount of the solvent is 0.1 to 99 wt % based on a total weight of the precursor composition.
9. The method of claim 6 , wherein the metal film is deposited through any one process selected from atomic layer deposition, chemical vapor deposition, or evaporation.
10. The method of claim 6 , further comprising a precursor composition transfer step of supplying the precursor composition onto the substrate, wherein the precursor composition transfer step is performed through any one process selected from a volatilization transfer process with a vapor pressure, a direct liquid injection process, or a liquid transfer process with a liquid delivery system.
11. The method of claim 6 , wherein the depositing comprises:
placing the substrate in a chamber; supplying the precursor composition into the chamber; supplying a reactive gas or a plasma of a reactive gas into the chamber;
and performing at least one selected from heat treatment, plasma treatment, or light irradiation in the chamber.
12. The method of claim 11 , wherein the reactive gas is at least one selected from water vapor (H 2 O), oxygen (O 2 ), ozone (O 3 ), hydrogen peroxide (H 2 O 2 ), hydrogen (H 2 ), ammonia (NH 3 ), nitrogen monoxide (NO), nitrous oxide (N 2 O), nitrogen dioxide (NO 2 ), hydrazine (N 2 H 4 ), or silane (SiH 4 ), and the plasma of the reactive gas is any one selected from RF plasma, DC plasma, or remote plasma.
13. The method of claim 11 , wherein a deposition temperature in the chamber is 250° C. to 400° C.
14. The method of claim 6 , wherein the zirconium compound and the hafnium compound are mixed at a weight ratio of 0.1:99.9 to 99.9:0.1.
15. A semiconductor device comprising a metal film manufactured according to the method of claim 6 .
16. A transistor comprising a metal film manufactured according to the method of claim 6 , wherein the metal film constitutes a gate-insulating layer of the transistor.
17. The method of claim 7 , wherein the metal film is deposited through any one process selected from atomic layer deposition, chemical vapor deposition, or evaporation.
18. The method of claim 7 , further comprising a precursor composition transfer step of supplying the precursor composition onto the substrate,
wherein the precursor composition transfer step is performed through any one process selected from a volatilization transfer process in the presence of a vapor pressure, a direct liquid injection process, and a liquid transfer process using with a liquid delivery system.
19. The method of claim 7 , wherein the depositing comprises:
placing the substrate in a chamber;
supplying the precursor composition into the chamber;
supplying a reactive gas or a plasma of a reactive gas into the chamber; and
performing at least one selected from heat treatment, plasma treatment, or light irradiation in the chamber.
20. The method of claim 19 , wherein the reactive gas is at least one selected from water vapor (H 2 O), oxygen (O 2 ), ozone (O 3 ), hydrogen peroxide (H 2 O 2 ), hydrogen (H 2 ), ammonia (NH 3 ), nitrogen monoxide (NO), nitrous oxide (N 2 O), nitrogen dioxide (NO 2 ), hydrazine (N 2 H 4 ), or silane (SiH 4 ), and the plasma of the reactive gas is any one selected from RF plasma, DC plasma, or remote plasma.
21. The method of claim 19 , wherein a deposition temperature in the chamber is 250° C. to 400° C.
22. The method of claim 7 , wherein the zirconium compound and the hafnium compound are mixed at a weight ratio of 0.1:99.9 to 99.9:0.1.
23. A semiconductor device comprising a metal film manufactured according to the method of claim 7 .
24. A transistor comprising a metal film manufactured using according to the method of claim 7 , wherein the metal film constitutes a gate-insulating layer of the transistor.