Semiconductor device and method for manufacturing the same
A semiconductor device includes a lower electrode; a supporter supporting an outer wall of the lower electrode; a dielectric layer formed on the lower electrode and the supporter; an upper electrode on the dielectric layer; a first interfacial layer disposed between the lower electrode and the dielectric layer and selectively formed on a surface of the lower electrode among the lower electrode and the supporter; and a second interfacial layer disposed between the dielectric layer and the upper electrode, wherein the first interfacial layer is a stack of a metal oxide contacting the lower electrode and a metal nitride contacting the dielectric layer.
1. A semiconductor device comprising:
a lower electrode;
a supporter supporting an outer wall of the lower electrode;
a dielectric layer formed on the lower electrode and the supporter;
an upper electrode on the dielectric layer;
a first interfacial layer disposed between the lower electrode and the dielectric layer and selectively formed on a surface of the lower electrode among the lower electrode and the supporter; and
a second interfacial layer disposed between the dielectric layer and the upper electrode,
wherein the first interfacial layer is a stack of niobium oxide contacting the lower electrode and niobium nitride contacting the dielectric layer.
2. The semiconductor device of claim 1 ,
wherein the dielectric layer and the supporter are in direct contact with each other, and
wherein the first interfacial layer is not disposed in an interfacial layer-free part of the semiconductor device.
3. The semiconductor device of claim 1 ,
wherein the niobium nitride includes a material obtained by selectively nitriding a portion of the niobium oxide.
4. The semiconductor device of claim 1 ,
wherein the dielectric layer includes hafnium oxide having a tetragonal structure.
5. The semiconductor device of claim 1 ,
wherein the dielectric layer includes zirconium oxide, hafnium oxide, ferroelectric material, antiferroelectric material, HfZrO, a ZAZ (ZrO2/Al2O3/ZrO2) stack, a ZAZA (ZrO2/Al2O3/ZrO2/Al2O3) stack, a ZAZAT (ZrO2/Al2O3/ZrO2/Al2O3/TiO2) stack, a HAH (HfO2/Al2O3/HfO2) stack, a TiO2/ZrO2/Al2O3/ZrO2 stack, a TiO2/HfO2/Al2O3/HfO2 stack, a Ta2O5/ZrO2/Al2O3/ZrO2 stack, a Ta2O5/HfO2/Al2O3/HfO2 stack, a HZAZH (HfO2/ZrO2/Al2O3/ZrO2/HfO2) stack, a HZAZHA (HfO2/ZrO2/Al2O3/ZrO2/HfO2/Al2O3) stack, a ZAH (ZrO2/Al2O3/HfO2) stack, a HAZ (HfO2/Al2O3/ZrO2) stack, a ZHAZHAT (ZrO2/HfO2/Al2O3/ZrO2/HfO2/Al2O3/TiO2) stack or a combination thereof.
6. The semiconductor device of claim 1 ,
wherein the lower electrode has a cylindrical shape, a pillar shape, or a combination thereof.
7. The semiconductor device of claim 1 ,
wherein the first interfacial layer and the second interfacial layer include the same material.
8. The semiconductor device of claim 1 ,
wherein the second interfacial layer includes a stack of niobium oxide and niobium nitride,
wherein the niobium oxide contacts the dielectric layer, and
wherein the niobium nitride contacts the upper electrode.
9. The semiconductor device of claim 1 ,
the second interfacial layer includes a stack of niobium oxide and niobium oxynitride,
wherein the niobium oxide contacts the dielectric layer, and
wherein the niobium oxynitride contacts the upper electrode.
10. The semiconductor device of claim 1 ,
wherein the second interfacial layer includes one metal selected from a group consisting of tantalum, titanium, yttrium and molybdenum, and
wherein the second interfacial layer includes an oxide of the metal, a nitride of the metal, an oxynitride of the metal, or a combination thereof.
11. The semiconductor device of claim 1 ,
wherein the supporter includes a multi-layered level supporter,
wherein the dielectric layer and the multi-layered level supporter are in direct contact with each other, and
wherein the first interfacial layer is not disposed in an interfacial layer-free part of the semiconductor device.