Surface damage control in diodes
A semiconductor device and a method of forming the same is disclosed. The semiconductor device includes a substrate, a first well region disposed within the substrate, a second well region disposed adjacent to the first well region and within the substrate, and an array of well regions disposed within the first well region. The first well region includes a first type of dopants, the second well region includes a second type of dopants that is different from the first type of dopants, and the array of well regions include the second type of dopants. The semiconductor device further includes a metal silicide layer disposed on the array of well regions and within the substrate, a metal silicide nitride layer disposed on the metal silicide layer and within the substrate, and a contact structure disposed on the metal silicide nitride layer.
1. A semiconductor device, comprising:
a substrate;
a first well region disposed within the substrate, wherein the first well region comprises a first type of dopants;
a second well region disposed adjacent to the first well region and within the substrate, wherein the second well region comprises a second type of dopants that is different from the first type of dopants;
an array of well regions disposed within the first well region, wherein the array of well regions comprise the second type of dopants;
a metal silicide layer disposed on the array of well regions and within the substrate;
a metal silicide nitride layer disposed on the metal silicide layer and within the substrate, wherein an interface between the metal silicide layer and the metal silicide nitride layer is at a plane same as or lower than a top surface of the substrate; and
a contact structure disposed on the metal silicide nitride layer.
2. The semiconductor device of claim 1 , wherein first portions of the metal silicide layer are disposed on the array of well regions and second portions of the metal silicide layer are disposed on the first well region.
3. The semiconductor device of claim 1 , further comprising an etch stop layer disposed on the metal silicide nitride layer.
4. The semiconductor device of claim 1 , wherein a peak concentration of nitrogen atoms in the metal silicide nitride layer is separated from a top surface of the metal silicide nitride layer by a distance of about 0.05 nm to about 1 nm.
5. The semiconductor device of claim 1 , wherein a top surface of the metal silicide nitride layer is substantially coplanar with the top surface of the substrate.
6. The semiconductor device of claim 1 , wherein the interface between the metal silicide layer and the metal silicide nitride layer is at the plane lower than the top surface of the substrate.
7. The semiconductor device of claim 1 , wherein a ratio between a thickness of the metal silicide nitride layer and a thickness of the metal silicide layer is about 1:3 to about 1:20.
8. The semiconductor device of claim 1 , further comprising a doped region disposed on the first well region and within the substrate, wherein the doped region comprises the first type of dopants.
9. The semiconductor device of claim 8 , further comprising:
an other metal silicide layer disposed on the doped region and within the substrate; and
an other metal silicide nitride layer disposed on the other metal silicide layer and within the substrate.
10. The semiconductor device of claim 1 , wherein the metal silicide layer comprises cobalt silicide and the metal silicide nitride layer comprises cobalt silicide nitride.
11. A semiconductor device, comprising:
a substrate;
a first well region disposed within the substrate;
a second well region disposed adjacent to the first well region and within the substrate;
an array of well regions disposed within the first well region;
a silicide layer disposed on the array of well regions and within the substrate, wherein a verticalsidewall of the silicide layer is in physical contact with a verticalsidewall of a well region in the array of well regions;
a silicide nitride layer disposed on the substrate;
and a contact structure disposed on the silicide nitride layer.
12. The semiconductor device of claim 11 , wherein a top surface of the silicide layer is substantially coplanar with a top surface of the substrate.
13. The semiconductor device of claim 11 , wherein an interface between the silicide layer and the silicide nitride layer is substantially coplanar with a top surface of the substrate.
14. The semiconductor device of claim 11 , further comprising an etch stop layer disposed on the silicide nitride layer.
15. The semiconductor device of claim 11 , wherein a ratio between a thickness of the silicide nitride layer and a thickness of the silicide layer is about 1:3 to about 1:20.
16. The semiconductor device of claim 11 , wherein a peak concentration of nitrogen atoms in the silicide nitride layer is separated from a top surface of the silicide nitride layer by a distance of about 0.05 nm to about 1 nm.
17. A semiconductor device, comprising: a substrate;
a first well region, disposed on the substrate, comprising a first type of dopants;
a second well region, surrounding the first well region, comprising a second type of dopants different from the first type of dopants;
a metal silicide layer disposed on and in physical contact with the first and second well regions;
a metal silicide nitride layer disposed on the metal silicide layer; and
a contact structure disposed on the metal silicide nitride layer.
18. The semiconductor device of claim 17 , further comprising a third well region, surrounding the second well region, comprising a third type of dopants different from the second type of dopants.
19. The semiconductor device of claim 17 , wherein the metal silicide layer comprises a cobalt silicide layer.
20. The semiconductor device of claim 17 , wherein the metal silicide nitride layer comprises a cobalt silicide nitride layer.