IP Library › Granted Patent US 11,978,819
Granted Patent B2
US 11,978,819 · App. 17/224,286 · Granted May 7, 2024

Optical sensing device

Inventors: Weichun Chung (Hangzhou, CN); Suyi Lin (Hangzhou, CN)
Assignee: Silergy Semiconductor Technology (Hangzhou) LTD
H01L31/125H01L31/02024H01L31/02162
View Patent ↗
Loading inventors, assignments & file history…
Monitor This Case
Get email alerts when status or documents change.
Order Certified Copies
Most orders are placed with the USPTO same day — all within 24 business hours.
Order via The Patent Place →
Pre-filled with this patent's details
Quick Facts
Patent No.
US 11,978,819
App. No.
17/224,286
Granted
May 7, 2024
Kind
B2
Abstract

An optical sensing device can include: a semiconductor having a photosensitive region; an optical structure located above the photosensitive region; and where the optical structure comprises alternately stacked light-filtering layers and light-transmitting layers, in order to block large-angle incident light from entering the photosensitive region.

Claims (24)

1. An optical sensing device, comprising:

a) a semiconductor element having a photosensitive region;

b) an optical structure located above the photosensitive region;

c) wherein the optical structure comprises alternately stacked light-filtering layers and light-transmitting layers, in order to block large-angle incident light from entering the photosensitive region, wherein each layer of the light-filtering layers has a same thickness, and wherein opaque regions in each of the light filtering layers are vertically aligned at each vertical side thereof such that thicknesses thereof fully overlap in a vertical direction; and

d) a baffle arranged between a light-emitting element and the semiconductor element, wherein the baffle extends to a cover of the optical sensing device.

2. The optical sensing device of claim 1 , wherein light emitted by the light-emitting element is reflected by an object to be detected that is outside the optical sensing device, and then the reflected light enters the photosensitive region through the optical structure.

3. The optical sensing device of claim 2 , wherein the large-angle light is substantially crosstalk light.

4. The optical sensing device of claim 3 , wherein the crosstalk light comprises light reflected by an object that is not to be detected.

5. The optical sensing device of claim 3 , wherein the cover is located above the light-emitting element and the semiconductor element, and wherein the crosstalk light comprises light reflected by the cover.

6. The optical sensing device of claim 1 , wherein the light-filtering layer comprises a light-transmitting region and an opaque region.

7. The optical sensing device of claim 6 , wherein the opaque region reflects the large-angle incident light to block the large-angle incident light from passing through the optical structure.

8. The optical sensing device of claim 6 , wherein the opaque region absorbs the large-angle incident light to block the large-angle incident light from passing through the optical structure.

9. The optical sensing device of claim 6 , wherein there are at least two sizes of the light-transmitting regions on each light-filtering layer.

10. The optical sensing device of claim 6 , wherein a number of large-sized light-transmitting regions of each light-filtering layer is not greater than a number of small-sized light-transmitting regions of each light-filtering layer.

11. The optical sensing device of claim 6 , wherein shapes of the light-transmitting regions of the light-filtering layer are circles or polygons.

12. The optical sensing device of claim 6 , wherein shapes of the light-transmitting regions of the light-filtering layer are strip-shaped.

13. The optical sensing device of claim 6 , wherein a size of each light-transmitting region of each light-filtering layer is the same.

14. The optical sensing device of claim 13 , wherein each light-transmitting region of each light-filtering layer is aligned in a stacking direction.

15. The optical sensing device of claim 6 , wherein a size of each light-transmitting region of each light-filtering layer increases from a top layer to a bottom layer in a stacking direction.

16. The optical sensing device of claim 6 , wherein a size of each light-transmitting region of each light-filtering layer decreases from a top layer to a bottom layer in a stacking direction.

17. The optical sensing device of claim 12 , wherein in a stacking direction, adjacent light-filtering layers are arranged in a staggered arrangement, such that the strip-shaped structures of adjacent light-filtering layers cross in a length direction, wherein the cross is a non-contact cross.

18. The optical sensing device of claim 12 , wherein in a stacking direction, adjacent light-filtering layers are arranged in a staggered arrangement, such that the strip-shaped structures of adjacent light-filtering layers are vertical in a length direction, wherein the vertical is a non-contact vertical.

19. The optical sensing device of claim 1 , wherein the light-transmitting regions of each light-filtering layer are arranged in regular patterns in a predetermined order.

20. The optical sensing device of claim 6 , wherein the opaque regions of each layer of light-filtering layers comprises a metal.

Assignments (1)
ASSIGNMENT OF ASSIGNOR'S INTEREST Recorded Apr 7, 2021
From: CHUNG, WEICHUN; LIN, SUYI
To: SILERGY SEMICONDUCTOR TECHNOLOGY (HANGZHOU) LTD
Reel/Frame 055849/0768 →
Priority Claims (1)
CN 202010297930.3 · Apr 16, 2020 · national
Continuity (1)
Related Publication 20210328088A1 · Oct 21, 2021