Array substrate and OLED display panel

1. An array substrate, comprising:

a display area;

a bending area at a side of the display area;

a base substrate;

a first film layer set, positioned on the base substrate and comprising a buffer layer;

an active layer, positioned on the buffer layer;

a first gate insulating layer, covering the active layer;

a first gate electrode, positioned on the first gate insulating layer;

a second gate insulating layer, covering the first gate electrode;

a second gate electrode, positioned on the second gate insulating layer;

an interlayer dielectric layer, covering the second gate electrode;

a source/drain electrode, positioned on the interlayer dielectric layer; and

a planarization layer, covering the source/drain electrode; and

a second film layer set, positioned at one side of the first film layer set, which is comparatively far away from the base substrate, wherein the bending area has a first trench throughout the first film layer set and a second trench throughout the second film layer set; one side of the first film layer set close to the second film layer set has a blocking part; the blocking part has an etching opening corresponding to the first trench; the etching opening is throughout the blocking part; a bottom of the etching opening connects to a top of the first trench; a bottom of the second trench connects to a top of the blocking part; and an orthographic projection of the second trench on the base substrate covers an orthographic projection of the etching opening on the base substrate,

wherein the blocking part comprises:

a plurality of blocking blocks, positioned at a same layer as at least one of the active layer, the first gate electrode and the second gate electrode;

wherein the etching opening is throughout all the blocking blocks, and the blocking blocks extend along a first direction parallel to a length direction of the first trench,

wherein one end of the blocking blocks comparatively far away from the etching opening has a plurality of notches along a second direction, and the notches are distributed along the first direction.

2. The array substrate of claim 1 , wherein the blocking blocks and the active layer are manufactured in a same process if the blocking blocks and the active layer are in a same layer; the blocking blocks and the first gate electrode are manufactured in a same process if the blocking blocks and the first gate electrode are in a same layer; and the blocking blocks and the second gate electrode are manufactured in a same process if the blocking blocks and the second gate electrode are in a same layer.

3. The array substrate of claim 1 , wherein the blocking blocks comprises a plurality of blocking stripes distributed and equally-spaced along the first direction.

4. The array substrate of claim 1 , wherein the blocking part comprises a first blocking block and a second blocking block, the first blocking block is positioned in a same layer as at least one of the active layer, the first gate electrode, and the second gate electrode, and the second blocking block is positioned in a same layer as at least another one of the active layer, the first gate electrode, and the second gate electrode;

wherein the first blocking block comprises a plurality of first blocking stripes distributed and equally-spaced along the first direction, two adjacent first blocking stripes has a first gap in between; the second blocking block comprises a plurality of second blocking stripes distributed and equally-spaced along the first direction, two adjacent second blocking stripes has a second gap in between; an orthogonal projection of a first blocking strip on the base substrate cover an orthogonal projection of the second gap on the base substrate; and an orthogonal projection of a second blocking strip on the base substrate covers an orthogonal projection of the first gap on the base substrate.

5. The array substrate of claim 1 , wherein the first trench and the second trench are manufactured by a same process.

6. The array substrate of claim 1 , wherein the interlayer dielectric layer has a via throughout the interlayer dielectric layer and extending to the active layer; the source/drain electrode is filling up in the via and electrically connected to the active layer; and the via, the first trench and the second trench are manufactured through a same process.

7. An organic light emitting diode (OLED) display panel, comprising:

an array substrate, having a display area and a bending area at a side of the display area, the array substrate comprising:

a base substrate;

a first film layer set, positioned on the base substrate and comprising a buffer layer;

an active layer, positioned on the buffer layer;

a first gate insulating layer, covering the active layer;

a first gate electrode, positioned on the first gate insulating layer;

a second gate insulating layer, covering the first gate electrode;

a second gate electrode, positioned on the second gate insulating layer;

an interlayer dielectric layer, covering the second gate electrode;

a source/drain electrode, positioned on the interlayer dielectric layer; and

a planarization layer, covering the source/drain electrode; and

a second film layer set, positioned at one side of the first film layer set, which is comparatively far away from the base substrate, wherein the bending area has a first trench throughout the first film layer set and a second trench throughout the second film layer set; one side of the first film layer set close to the second film layer set has a blocking part; the blocking part has an etching opening corresponding to the first trench; the etching opening is throughout the blocking part; a bottom of the etching opening connects to a top of the first trench; a bottom of the second trench connects to a top of the blocking part; and an orthographic projection of the second trench on the base substrate covers an orthographic projection of the etching opening on the base substrate,

an anode metal layer and a pixel definition layer, positioned on the array substrate;

a light emitting material layer, positioned on the anode metal layer;

a supporting pillar, positioned on the pixel definition layer; and

a cathode layer, positioned on the pixel definition layer, the supporting pillar, and the light emitting material layer,

wherein the blocking part comprises:

a plurality of blocking blocks, positioned at a same layer as at least one of the active layer, the first gate electrode and the second gate electrode;

wherein the etching opening is throughout all the blocking blocks, and the blocking blocks extend along a first direction parallel to a length direction of the first trench,

wherein one end of the blocking blocks comparatively far away from the etching opening has a plurality of notches along a second direction, and the notches are distributed along the first direction.

8. The OLED display panel of claim 7 , wherein the blocking blocks and the active layer are manufactured in a same process if the blocking blocks and the active layer are in a same layer; the blocking blocks and the first gate electrode are manufactured in a same process if the blocking blocks and the first gate electrode are in a same layer; and the blocking blocks and the second gate electrode are manufactured in a same process if the blocking blocks and the second gate electrode are in a same layer.

9. The OLED display panel of claim 7 , wherein the blocking blocks comprises a plurality of blocking stripes distributed and equally-spaced along the first direction.

10. The OLED display panel of claim 7 , wherein the blocking part comprises a first blocking block and a second blocking block, the first blocking block is positioned in a same layer as at least one of the active layer, the first gate electrode, and the second gate electrode, and the second blocking block is positioned in a same layer as at least another one of the active layer, the first gate electrode, and the second gate electrode;

wherein the first blocking block comprises a plurality of first blocking stripes distributed and equally-spaced along the first direction, two adjacent first blocking stripes has a first gap in between; the second blocking block comprises a plurality of second blocking stripes distributed and equally-spaced along the first direction, two adjacent second blocking stripes has a second gap in between; an orthogonal projection of a first blocking strip on the base substrate cover an orthogonal projection of the second gap on the base substrate; and an orthogonal projection of a second blocking strip on the base substrate covers an orthogonal projection of the first gap on the base substrate.

11. The OLED display panel of claim 7 , wherein the first trench and the second trench are manufactured by a same process.

12. The OLED display panel of claim 7 , wherein the interlayer dielectric layer has a via throughout the interlayer dielectric layer and extending to the active layer; the source/drain electrode is filling up in the via and electrically connected to the active layer; and the via, the first trench and the second trench are manufactured through a same process.

13. The OLED display panel of claim 7 , wherein the first trench extends along its length direction to pass through a front side and a back side of the first film layer set; and the second trench extends along its length direction to pass through a front side and a back side of the second film layer set.

14. The OLED display panel of claim 7 , wherein the first trench and the second trench are connected to each other, and an orthogonal projection of a second trench on the base substrate covers an orthogonal projection of the first trench on the base substrate.