Multigate device with air gap spacer and backside rail contact and method of fabricating thereof
Methods and devices that include a multigate device having a channel layer disposed between a source feature and a drain feature, a metal gate that surrounds the channel layer, and a first air gap spacer interposing the metal gate and the source feature and a second air gap spacer interposing the metal gate and the drain feature. A backside contact extends to the source feature. A power line metallization layer is connected to the backside contact.
1. A method, comprising:
providing a structure having a frontside and a backside;
forming a gate-all-around (GAA) device on the frontside of the structure, wherein the forming the GAA device includes:
etching a plurality of alternating layers to form a fin structure;
forming inner spacers including a dummy dielectric material and a low-k dielectric material between channel layers of the fin structures;
epitaxially growing a source/drain feature adjacent a first side of the inner spacers;
releasing the channel layers in a channel region of the fin structure adjacent a second side of the inner spacers, the second side opposing the first side; and
forming a metal gate structure between the channel layers;
after forming the GAA device, flipping the structure to remove a portion of substrate exposing the dummy dielectric material;
removing the dummy dielectric material to form an air gap; and
depositing an insulating material layer on the backside of the structure over the air gap.
2. The method of claim 1 , further comprising: removing the low-k dielectric material after forming the GAA device to form a portion of the air gap.
3. The method of claim 1 , wherein after the removing the dummy dielectric material to form the air gap, a portion of the dummy dielectric material remains adjacent the air gap.
4. The method of claim 3 , wherein the portion of the dummy dielectric material interfaces with gate spacers.
5. The method of claim 1 , further comprising:
forming a contact to the source/drain feature from a backside of the device after forming the air gap.
6. The method of claim 5 , wherein forming the contact includes forming a via to interface a metallization layer formed on the backside of the structure; connecting the metallization layer to a power source.
7. The method of claim 1 , wherein the forming the metal gate structure includes forming a high-k dielectric interfacing with the dummy dielectric material.
8. A method of fabricating a device comprising:
forming a multigate device over a semiconductor substrate, the multigate device having:
a channel layer disposed between a source feature and a drain feature, a metal gate that surrounds the channel layer, a first spacer material between the metal gate and a source region and a second spacer material between the metal gate a drain region;
thinning the semiconductor substrate by decreasing a thickness of the semiconductor substrate from a backside of the semiconductor substrate to expose a bottom surface of at least one of the source region or the drain region; and
removing the first spacer material and the second spacer material to form air gaps, wherein the removing the first and second spacer material is performed by etching with the bottom surface exposed.
9. The method of claim 8 , further comprising: epitaxially growing the source region and epitaxially growing the drain region, wherein the epitaxially grown source region has a greater depth than the epitaxially grown drain region.
10. The method of claim 9 , wherein the thinning the semiconductor substrate exposes the bottom surface of the source region.
11. The method of claim 10 , further comprising: etching a portion of the semiconductor substrate adjacent the source region after the thinning, wherein the etching the portion exposes the first spacer material and the second spacer material.
12. The method of claim 8 , wherein after the removing the first spacer material and the second spacer material to form air gaps, a residual portion of at least one of the first spacer material or the second spacer material remains.
13. The method of claim 8 , further comprising: depositing an insulating material to seal the air gaps.
14. The method of claim 13 , further comprising: forming a backside metallization feature over the insulating material.
15. A method, comprising:
providing a structure having a frontside and a backside;
forming a gate-all-around (GAA) device on the frontside of the structure, wherein the forming the GAA device includes:
forming a plurality of channel layers vertically stacked;
forming an inner spacer layer including a dummy dielectric material and a low-k dielectric material, wherein a portion of the inner spacer layer extends between a first channel layer and a second channel layer of the plurality of channel layers;
epitaxially growing a source/drain feature adjacent a first side of the inner spacers; and
forming a metal gate structure between the first channel layer and the second channel layer adjacent the inner spacer;
etching the backside of the structure; and
after etching the backside of the structure, removing the dummy dielectric material to form an air gap.
16. The method of claim 15 , wherein the removing the dummy dielectric material is performed from the backside of the structure.
17. The method of claim 15 , further comprising:
depositing a layer of dielectric on the backside of the structure after removing the dummy dielectric material.
18. The method of claim 15 , wherein the removing the dummy dielectric material leaves a residue of the dummy dielectric material.
19. The method of claim 15 , further comprising, forming a dielectric fin on the frontside of the structure, the dielectric fin adjacent the GAA device.
20. The method of claim 19 , wherein the inner spacer layer extends to a sidewall of the dielectric fin.