Semiconductor device

1. A semiconductor device, comprising:

a substrate including a main surface;

a semiconductor element mounted on the main surface, the semiconductor element including a front surface that faces in a same direction as the main surface and a first electrode formed on the front surface and containing SiC;

a first pad arranged away from the substrate; and

wires spaced apart from each other and connecting the first electrode to the first pad, wherein

the wires include a first wire and a second wire configured to be a combination of furthermost ones of the wires,

the first wire and the second wire are connected to the first electrode and the first pad so that the first wire and the second wire are separated from each other by a greater distance at the first pad than at the first electrode as viewed in a first direction that is perpendicular to the main surface,

when a direction orthogonal to the first direction is a second direction, and a direction orthogonal to the first direction and the second direction is a third direction, the semiconductor element and the first pad are located at different positions in at least the second direction, the wires are spaced apart from each other in the third direction, and the first wire and the second wire are ones of the wires located at opposite ends in the third direction, and

the semiconductor device further comprises:

an insulation film formed on the first electrode; and

an opening formed in a portion of the insulation film to expose the first electrode, wherein

the opening is rectangular so that a short-side direction conforms to the second direction and a long-side direction conforms to the third direction as viewed in the first direction, and

a dimension of the first pad in the third direction is greater than a dimension of the opening in the third direction.

2. The semiconductor device according to claim 1 , wherein the first pad is greater than the semiconductor element in dimension in the third direction.

3. The semiconductor device according to claim 1 , wherein the first wire is connected to an end of the first electrode in the third direction exposed in the opening.

4. The semiconductor device according to claim 1 , wherein

each of the first wire and the second wire includes a first electrode end connected to the first electrode and a first pad end connected to the first pad, and

as viewed in the first direction, the first electrode ends of the first wire and the second wire are located at a same position in the second direction and arranged in the third direction.

5. The semiconductor device according to claim 1 , wherein

each of the first wire and the second wire includes a first electrode end connected to the first electrode and a first pad end connected to the first pad, and

as viewed in the first direction, the first electrode ends of the first wire and the second wire are located at different positions in the second direction.

6. A semiconductor device, comprising:

a substrate including a main surface;

a semiconductor element mounted on the main surface, the semiconductor element including a front surface that faces in a same direction as the main surface and a first electrode formed on the front surface and containing SiC;

a first pad arranged away from the substrate; and

wires spaced apart from each other and connecting the first electrode to the first pad, wherein

the semiconductor element includes

an insulation film formed on the first electrode, and

an opening formed in a portion of the insulation film to expose the first electrode,

when a direction perpendicular to the main surface is a first direction, a direction orthogonal to the first direction is a second direction, and a direction orthogonal to the first direction and the second direction is a third direction, the opening is rectangular so that a short-side direction conforms to the second direction and a long-side direction conforms to the third direction as viewed in the first direction,

the wires are arranged along the long-side direction and include a first wire and a second wire configured to be a combination of furthermost ones of the wires,

the first electrode includes an exposed region exposed by the opening,

the exposed region includes a first exposed end and a second exposed end that are opposite ends in the third direction,

a portion of the first wire connected to the exposed region is connected to a portion of the exposed region located closer to the first exposed end than a central portion of the exposed region in the long-side direction, and

a portion of the second wire connected to the exposed region is connected to a portion of the exposed region located closer to the second exposed end than the central portion of the exposed region in the long-side direction.

7. The semiconductor device according to claim 6 , wherein

the semiconductor element and the first pad are located at different positions in at least the second direction,

the wires are spaced apart from each other in the third direction, and

the first wire and the second wire are ones of the wires located at opposite ends in the third direction.

8. The semiconductor device according to claim 6 , wherein the first pad is greater than the opening in dimension in the third direction.

9. The semiconductor device according to claim 6 , wherein

each of the first wire and the second wire includes a first electrode end connected to the first electrode and a first pad end connected to the first pad, and

as viewed in the first direction, the first electrode ends of the first wire and the second wire are located at a same position in the second direction and arranged in the third direction.

10. The semiconductor device according to claim 6 , wherein

each of the first wire and the second wire includes a first electrode end connected to the first electrode and a first pad end connected to the first pad,

the first pad includes a first end and a second end that are opposite ends in the third direction,

the first pad end of the first wire is connected to a portion of the first pad located closer to the first end than a central portion of the first pad in the third direction, and

the first pad end of the second wire is connected to a portion of the first pad located closer to the second end than the central portion of the first pad in the third direction.

11. The semiconductor device according to claim 10 , wherein

the first pad end of the first wire is connected to the first end, and

the first pad end of the second wire is connected to the second end.

12. The semiconductor device according to claim 6 , wherein the first electrode is rectangular so that a short-side direction conforms to the second direction and a long-side direction conforms to the third direction as viewed in the first direction.

13. A semiconductor device, comprising:

a substrate including a main surface and a rear surface that face in opposite directions;

a semiconductor element mounted on the main surface of the substrate and containing SiC;

an encapsulation resin that encapsulates the semiconductor element and at least a portion of the substrate; and

a first terminal projecting from a first side surface of the encapsulation resin in a direction parallel to the main surface, wherein

the rear surface of the substrate includes a portion located toward the first side surface and including an indent that extends from a portion of the rear surface below the semiconductor element toward the main surface, and

the encapsulation resin is partially received in the indent, so that a distance from the first side surface to an exposed surface of the rear surface of the substrate exposed from the encapsulation resin is greater than a distance from another side surface of the encapsulation resin to the exposed surface.

14. The semiconductor device according to claim 13 , wherein

the encapsulation resin includes a second side surface,

a second terminal of the semiconductor device projects from the second side surface,

the first side surface and the second side surface face in opposite directions, and

when a direction perpendicular to the main surface of the substrate is a first direction, and a direction in which the first side surface and the second side surface are arranged in a direction orthogonal to the first direction is a second direction, an edge of the exposed surface located toward the first side surface is located closer to the second side surface in the second direction than a central portion of the encapsulation resin in the second direction as viewed in the first direction.

15. The semiconductor device according to claim 14 , wherein

the second side surface is located at an opposite side of the first side surface, and

the semiconductor element is mounted on a portion of the main surface of the substrate located closer to the second side surface than the indent.

16. The semiconductor device according to claim 15 , wherein when a direction perpendicular to the main surface of the substrate is a first direction, and a direction in which the first side surface and the second side surface are arranged in a direction orthogonal to the first direction is a second direction, as viewed in the first direction, an end of the semiconductor element located toward the first side surface is arranged on a portion of the main surface of the substrate located closer to the second side surface in the second direction than a central portion of the encapsulation resin in the second direction.

17. The semiconductor device according to claim 14 , wherein when a direction perpendicular to the main surface of the substrate is a first direction, and a direction in which the first side surface and the second side surface are arranged in a direction orthogonal to the first direction is a second direction, the substrate includes narrow portions connected to a portion of the second terminal projecting from the second side surface in the second direction and located adjacent to each other along the second side surface as viewed in the first direction, and the semiconductor element is located away from the narrow portion in the second direction as viewed in the first direction.

18. The semiconductor device according to claim 13 , wherein the indent has a depth that is less than or equal to one-half of a thickness of the substrate.

19. The semiconductor device according to claim 1 , wherein

the substrate is formed of metal and includes a second pad on which the semiconductor element is arranged,

the semiconductor element includes a second electrode and a third electrode, the second electrode formed on a portion of the semiconductor element located closer to the substrate and electrically connected to the substrate, the third electrode formed on the front surface of the semiconductor element and performs a switching operation between the first electrode and the second electrode, and

the semiconductor device further comprises:

a third pad arranged away from the substrate and the first pad; and

a third wire connecting the third electrode to the third pad.

20. The semiconductor device according to claim 19 , wherein

the semiconductor element is a MOSFET,

the first electrode is a source electrode,

the second electrode is a drain electrode, and

the third electrode is a gate electrode.