Semiconductor device with compartment shield formed from metal bars and manufacturing method thereof
A semiconductor device has a substrate and first and second electrical component disposed over the substrate. A first metal bar is disposed over the substrate between the first electrical component and second electrical component. The first metal bar is formed by disposing a mask over a carrier. An opening is formed in the mask and a metal layer is sputtered over the mask. The mask is removed to leave the metal layer within the opening as the first metal bar. The first metal bar can be stored in a tape-and-reel.
1. A method of making a semiconductor device, comprising:
providing a substrate;
disposing a first electrical component over the substrate;
disposing a second electrical component over the substrate;
forming a first metal bar by,
providing a carrier,
disposing a mask over the carrier,
forming an opening in the mask,
sputtering a metal layer over the mask, and
removing the mask to leave the first metal bar on the carrier; and
disposing the first metal bar over the substrate between the first electrical component and the second electrical component.
2. The method of claim 1 , further including using a pick and place process or device to move the first metal bar from the carrier to a tape-and-reel storage.
3. The method of claim 1 , further including disposing a second metal bar over the substrate with the first electrical component between the first metal bar and second metal bar.
4. The method of claim 3 , further including disposing a third metal bar and fourth metal bar over the substrate with the first electrical component between the third metal bar and fourth metal bar.
5. The method of claim 1 , further including disposing a second metal bar over the substrate, wherein a length of the second metal bar is different from a length of the first metal bar.
6. A method of making a semiconductor device, comprising:
providing an electrical component;
removing a first metal bar from a tape-and-reel storage; and
disposing the first metal bar adjacent to the electrical component after removing the first metal bar from the tape-and-reel storage.
7. The method of claim 6 , further including disposing a second metal bar adjacent to the electrical component.
8. The method of claim 7 , further including disposing a third metal bar and a fourth metal bar adjacent to the electrical component, wherein the first metal bar, the second metal bar, the third metal bar, and the fourth metal bar in combination substantially surround the electrical component.
9. The method of claim 7 , wherein a length of the second metal bar is different from a length of the first metal bar.
10. The method of claim 6 , further including forming the first metal bar by:
forming an opening in a mask; and
sputtering a metal material into the opening.
11. The method of claim 6 , further including disposing the first metal bar using a pick-and-place nozzle.
12. A method of making a semiconductor device, comprising:
providing a substrate;
disposing a first electrical component over the substrate;
disposing a second electrical component over the substrate;
removing a first metal bar from a tape-and-reel storage; and
disposing the first metal bar over the substrate between the first electrical component and the second electrical component after removing the first metal bar from the tape-and-reel storage.
13. The method of claim 12 , further including forming the first metal bar by:
providing a carrier;
disposing a mask over the carrier;
forming an opening in the mask;
sputtering a metal layer over the mask; and
removing the mask to leave the metal bar on the carrier.
14. The method of claim 13 , further including using a pick and place process or device to move the first metal bar from the carrier to a tape-and-reel storage.
15. The method of claim 12 , further including disposing a second metal bar over the substrate with the first electrical component between the first metal bar and second metal bar.
16. The method of claim 15 , further including disposing a third metal bar and fourth metal bar over the substrate with the first electrical component between the third metal bar and fourth metal bar.
17. The method of claim 12 , further including disposing a second metal bar over the substrate, wherein a length of the second metal bar is different from a length of the first metal bar.
18. A method of making a semiconductor device, comprising:
providing an electrical component;
forming a first metal bar by,
providing a carrier,
disposing a mask over the carrier,
forming an opening in the mask,
sputtering a metal material into the opening, and
removing the first metal bar from the carrier; and
disposing the first metal bar adjacent to the electrical component after removing the mask.
19. The method of claim 18 , further including disposing a second metal bar adjacent to the electrical component.
20. The method of claim 19 , further including disposing a third metal bar and a fourth metal bar adjacent to the electrical component, wherein the first metal bar, the second metal bar, the third metal bar, and the fourth metal bar in combination substantially surround the electrical component.
21. The method of claim 19 , wherein a length of the second metal bar is different from a length of the first metal bar.
22. The method of claim 18 , further including removing the first metal bar from a tape-and-reel storage prior to disposing the first metal bar adjacent to the electrical component.
23. The method of claim 18 , further including disposing the first metal bar using a pick-and-place nozzle.