Semiconductor device with doped structure
The present disclosure relates to a semiconductor device includes first and second source/drain (S/D) regions doped with lead (Pb) at a first dopant concentration. The semiconductor device also includes a channel region between the first and second S/D regions, where the channel region is doped with Pb at a second dopant concentration that is lower than the first dopant concentration. The semiconductor device further includes first and second S/D contacts in contact with the first and second S/D regions, respectively. The semiconductor device also includes a gate electrode over the channel region.
1. A method for forming a semiconductor device, comprising:
performing an ion implantation process on a substrate to form a first doped source/drain (S/D) region with a first concentration of lead (Pb) atoms;
performing an ion implantation process on the substrate to form a first doped channel region with a second concentration of Pb atoms, wherein the second concentration of Pb atoms is less than the first concentration of Pb atoms; and
performing a first treatment process on the doped S/D region.
2. The method of claim 1 , wherein performing the first treatment process comprises performing a thermal recover process.
3. The method of claim 2 , further comprising heating the semiconductor device to a temperature between about 300° C. and 800° C. during the first treatment process.
4. The method of claim 1 , further comprising:
depositing a film on the substrate, the film comprising Pb;
performing a second treatment process on the film and the substrate to form a doped channel region, wherein the doped channel region comprises Pb;
performing an other first treatment process on the doped channel region; and
forming a gate electrode on the doped channel region.
5. The method of claim 1 , further comprising:
ion implanting a second S/D region over the first doped S/D region to form a second doped S/D region with a third concentration of Pb atoms, wherein the third concentration of Pb atoms is higher than the first concentration of Pb atoms in the first doped S/D region.
6. A method, comprising:
depositing a first film on a substrate, the first film comprising lead (Pb);
performing a first treatment process on the first film and the substrate to form a doped source/drain (S/D) region, wherein the doped S/D region comprises Pb;
performing a second treatment process on the doped S/D region;
depositing a second film on the substrate, the second film comprising Pb;
performing a third treatment process on the second film and the substrate to form a doped channel region, wherein the doped channel region comprises Pb; and
performing a fourth treatment process on the doped channel region.
7. The method of claim 6 , further comprising forming a spacer adjacent to the doped S/D region.
8. The method of claim 7 , wherein the second film is in contact with the spacer.
9. The method of claim 6 , further comprising forming a S/D contact on the doped S/D region.
10. The method of claim 6 , wherein the second and fourth treatments are performed at first and second temperatures, respectively, and wherein the first and second temperatures are different.
11. The method of claim 10 , wherein the first temperature is greater than the second temperature.
12. The method of claim 6 , further comprising removing the first film.
13. The method of claim 6 , further comprising removing the second film.
14. The method of claim 6 , wherein performing the second treatment process comprises performing a wet cleaning process.
15. The method of claim 6 , wherein performing the fourth treatment process comprises performing a dry plasma etching process.
16. A method, comprising:
forming a source region and a drain region on a substrate;
depositing a first film on the substrate, the first film comprising lead (Pb);
patterning the first film to form first and second portions of the first film on the source region and the drain region, respectively;
performing a first treatment process on the first and second portions of the first film to form a doped source region and a doped drain region, wherein the doped source region and the doped drain region comprise Pb;
depositing a second film on the substrate, the second film comprising Pb; and
performing a second treatment process on the second film to form a doped channel region between the doped source region and the doped drain region, wherein the doped channel region comprises Pb.
17. The method of claim 16 , further comprising performing a third treatment process on the doped source region and the doped drain region.
18. The method of claim 16 , further comprising performing a third treatment process on the doped channel region.
19. The method of claim 16 , wherein the first and second treatments are performed at first and second temperatures, respectively, and wherein the first and second temperatures are different.
20. The method of claim 16 , further comprising removing the first and second films.