Light-emitting device

1. A light-emitting device, comprising:

a substrate having a main surface;

a first cladding layer provided on the main surface;

an active layer provided on the first cladding layer;

a second cladding layer provided on the active layer;

a resonance mode formation layer provided between the first cladding layer and the active layer or between the active layer and the second cladding layer, the resonance mode formation layer including a base layer and a plurality of modified refractive index regions, the plurality of modified refractive index regions having a refractive index different from a refractive index of the base layer and distributed two-dimensionally on a design surface orthogonal to a normal of the main surface; and

a high refractive index layer provided between the first cladding layer and the second cladding layer, the high refractive index layer having a refractive index higher than a refractive index of any of the first cladding layer, the second cladding layer, and the resonance mode formation layer, the high refractive index layer provided in at least one of a space in which the resonance mode formation layer is sandwiched between the high refractive index layer and the active layer, and a space in which the high refractive index layer is sandwiched between the active layer and the resonance mode formation layer, wherein

the first cladding layer, the active layer, the second cladding layer, the resonance mode formation layer, and the high refractive index layer mainly contain a nitride semiconductor, and

the high refractive index layer has a superlattice structure in which two or more layers having refractive indices different from each other are repeatedly laminated along a normal direction of the main surface.

2. A light-emitting device according to claim 1 , wherein, comprising:

a substrate having a main surface;

a first cladding layer provided on the main surface;

an active layer provided on the first cladding layer;

a second cladding layer provided on the active layer;

a resonance mode formation layer provided between the first cladding layer and the active layer or between the active layer and the second cladding layer, the resonance mode formation layer including a base layer and a plurality of modified refractive index regions, the plurality of modified refractive index regions having a refractive index different from a refractive index of the base layer and distributed two-dimensionally on a design surface orthogonal to a normal of the main surface; and

a high refractive index layer provided between the first cladding layer and the second cladding layer, the high refractive index layer having a refractive index higher than a refractive index of any of the first cladding layer, the second cladding layer, and the resonance mode formation layer, the high refractive index layer provided in at least one of a space in which the resonance mode formation layer is sandwiched between the high refractive index layer and the active layer, and a space in which the high refractive index layer is sandwiched between the active layer and the resonance mode formation layer, wherein

the first cladding layer, the active layer, the second cladding layer, the resonance mode formation layer, and the high refractive index layer mainly contain a nitride semiconductor,

the high refractive index layer has a superlattice structure in which two or more layers having refractive indices different from each other are repeatedly laminated along a normal direction of the main surface, and

the resonance mode formation layer includes a photonic crystal layer in which the plurality of modified refractive index regions are periodically arranged.

3. A light-emitting device, comprising:

a substrate having a main surface;

a first cladding layer provided on the main surface;

an active layer provided on the first cladding layer;

a second cladding layer provided on the active layer;

a resonance mode formation layer provided between the first cladding layer and the active layer or between the active layer and the second cladding layer, the resonance mode formation layer including a base layer and a plurality of modified refractive index regions, the plurality of modified refractive index regions having a refractive index different from a refractive index of the base layer and distributed two-dimensionally on a design surface orthogonal to a normal of the main surface; and

a high refractive index layer provided between the first cladding layer and the second cladding layer, the high refractive index layer having a refractive index higher than a refractive index of any of the first cladding layer, the second cladding layer, and the resonance mode formation layer, the high refractive index layer provided in at least one of a space in which the resonance mode formation layer is sandwiched between the high refractive index layer and the active layer, and a space in which the high refractive index layer is sandwiched between the active layer and the resonance mode formation layer, wherein

the first cladding layer, the active layer, the second cladding layer, the resonance mode formation layer, and the high refractive index layer mainly contain a nitride semiconductor,

the high refractive index layer has a superlattice structure in which two or more layers having refractive indices different from each other are repeatedly laminated along a normal direction of the main surface, and

in order to output light for forming an optical image along the normal direction of the main surface of the substrate, a tilt direction intersecting with the normal direction, or both the normal direction and the tilt direction,

in a virtual square lattice set on the design surface of the resonance mode formation layer, at least one modified refractive index region of the plurality of modified refractive index regions is associated with each lattice point of the virtual square lattice, and a center of gravity of each of the plurality of modified refractive index regions is arranged at a position having a rotation angle corresponding to the optical image centered on a corresponding lattice point in a state of being apart from the corresponding lattice point.

4. A light-emitting device, comprising:

a substrate having a main surface;

a first cladding layer provided on the main surface;

an active layer provided on the first cladding layer;

a second cladding layer provided on the active layer;

a resonance mode formation layer provided between the first cladding layer and the active layer or between the active layer and the second cladding layer, the resonance mode formation layer including a base layer and a plurality of modified refractive index regions, the plurality of modified refractive index regions having a refractive index different from a refractive index of the base layer and distributed two-dimensionally on a design surface orthogonal to a normal of the main surface; and

a high refractive index layer provided between the first cladding layer and the second cladding layer, the high refractive index layer having a refractive index higher than a refractive index of any of the first cladding layer, the second cladding layer, and the resonance mode formation layer, the high refractive index layer provided in at least one of a space in which the resonance mode formation layer is sandwiched between the high refractive index layer and the active layer, and a space in which the high refractive index layer is sandwiched between the active layer and the resonance mode formation layer, wherein

the first cladding layer, the active layer, the second cladding layer, the resonance mode formation layer, and the high refractive index layer mainly contain a nitride semiconductor,

the high refractive index layer has a superlattice structure in which two or more layers having refractive indices different from each other are repeatedly laminated along a normal direction of the main surface, and

in order to output light for forming an optical image along the normal direction of the main surface of the substrate, a tilt direction intersecting with the normal direction, or both the normal direction and the tilt direction,

in a virtual square lattice set on the design surface of the resonance mode formation layer, at least one modified refractive index region of the plurality of modified refractive index regions is associated with each lattice point of the virtual square lattice, and a center of gravity of each of the plurality of modified refractive index regions is arranged on a straight line passing through a corresponding lattice point and tilted with respect to the virtual square lattice, in a state where a distance between the center of gravity and the corresponding lattice point is individually set according to the optical image.

5. The light-emitting device according to claim 1 , wherein

the first cladding layer, the second cladding layer, and the base layer are a GaN layer or an AlGaN layer, and

at least one layer of the two or more layers of the high refractive index layer is a nitride semiconductor layer containing In.

6. The light-emitting device according to claim 5 , wherein the at least one layer of the high refractive index layer further contains Al.

7. The light-emitting device according to claim 5 , wherein

the active layer has a multiple quantum well structure in which quantum well layers and barrier layers are alternately laminated along the normal direction, and

a band gap of the at least one layer of the high refractive index layer is wider than a band gap of the quantum well layer.

8. The light-emitting device according to claim 7 , wherein

the quantum well layer is a nitride semiconductor layer containing In, and

In composition of the at least one layer of the high refractive index layer, defined by a molar ratio with respect to all dopants contained in the nitride semiconductor, is smaller than In composition of the quantum well layer.

9. The light-emitting device according to claim 5 , wherein In composition of the at least one layer of the high refractive index layer, defined by a molar ratio with respect to all dopants contained in the nitride semiconductor, is 2% or more.

10. The light-emitting device according to claim 9 , wherein the In composition of the at least one layer of the high refractive index layer is 2% or more.

11. The light-emitting device according to claim 2 , wherein

the first cladding layer, the second cladding layer, and the base layer are a GaN layer or an AlGaN layer, and

at least one layer of the two or more layers of the high refractive index layer is a nitride semiconductor layer containing In.

12. The light-emitting device according to claim 11 , wherein the at least one layer of the high refractive index layer further contains Al.

13. The light-emitting device according to claim 11 , wherein

the active layer has a multiple quantum well structure in which quantum well layers and barrier layers are alternately laminated along the normal direction, and

a band gap of the at least one layer of the high refractive index layer is wider than a band gap of the quantum well layer.

14. The light-emitting device according to claim 13 , wherein

the quantum well layer is a nitride semiconductor layer containing In, and

In composition of the at least one layer of the high refractive index layer, defined by a molar ratio with respect to all dopants contained in the nitride semiconductor, is smaller than In composition of the quantum well layer.

15. The light-emitting device according to claim 11 , wherein In composition of the at least one layer of the high refractive index layer, defined by a molar ratio with respect to all dopants contained in the nitride semiconductor, is 2% or more.

16. The light-emitting device according to claim 15 , wherein the In composition of the at least one layer of the high refractive index layer is 2% or more.

17. The light-emitting device according to claim 3 , wherein

the first cladding layer, the second cladding layer, and the base layer are a GaN layer or an AlGaN layer, and

at least one layer of the two or more layers of the high refractive index layer is a nitride semiconductor layer containing In.

18. The light-emitting device according to claim 17 , wherein the at least one layer of the high refractive index layer further contains Al.

19. The light-emitting device according to claim 17 , wherein

the active layer has a multiple quantum well structure in which quantum well layers and barrier layers are alternately laminated along the normal direction, and

a band gap of the at least one layer of the high refractive index layer is wider than a band gap of the quantum well layer.

20. The light-emitting device according to claim 19 , wherein

the quantum well layer is a nitride semiconductor layer containing In, and

In composition of the at least one layer of the high refractive index layer, defined by a molar ratio with respect to all dopants contained in the nitride semiconductor, is smaller than In composition of the quantum well layer.

21. The light-emitting device according to claim 17 , wherein In composition of the at least one layer of the high refractive index layer, defined by a molar ratio with respect to all dopants contained in the nitride semiconductor, is 2% or more.

22. The light-emitting device according to claim 21 , wherein the In composition of the at least one layer of the high refractive index layer is 2% or more.

23. The light-emitting device according to claim 4 , wherein

the first cladding layer, the second cladding layer, and the base layer are a GaN layer or an AlGaN layer, and

at least one layer of the two or more layers of the high refractive index layer is a nitride semiconductor layer containing In.

24. The light-emitting device according to claim 23 , wherein the at least one layer of the high refractive index layer further contains Al.

25. The light-emitting device according to claim 23 , wherein

the active layer has a multiple quantum well structure in which quantum well layers and barrier layers are alternately laminated along the normal direction, and

a band gap of the at least one layer of the high refractive index layer is wider than a band gap of the quantum well layer.

26. The light-emitting device according to claim 25 , wherein

the quantum well layer is a nitride semiconductor layer containing In, and

In composition of the at least one layer of the high refractive index layer, defined by a molar ratio with respect to all dopants contained in the nitride semiconductor, is smaller than In composition of the quantum well layer.

27. The light-emitting device according to claim 23 , wherein In composition of the at least one layer of the high refractive index layer, defined by a molar ratio with respect to all dopants contained in the nitride semiconductor, is 2% or more.

28. The light-emitting device according to claim 27 , wherein the In composition of the at least one layer of the high refractive index layer is 2% or more.