High selectivity atomic layer deposition process
Methods for depositing a metal containing material formed on a certain material of a substrate using an atomic layer deposition process for semiconductor applications are provided. In one embodiment, a method of forming a metal containing material on a substrate comprises pulsing a first gas precursor comprising a metal containing precursor to a surface of a substrate, pulsing a second gas precursor comprising a silicon containing precursor to the surface of the substrate, forming a metal containing material selectively on a first material of the substrate, and thermal annealing the metal containing material formed on the substrate.
1. A method of forming a metal containing material on a substrate comprising:
pulsing a first gas precursor comprising a metal containing precursor to a surface of a substrate;
pulsing a second gas precursor comprising a silicon containing precursor to the surface of the substrate;
forming a metal containing material selectively on a first material of the substrate, wherein the metal containing layer is a MoSiO layer; and
thermal annealing the metal containing material formed on the substrate.
2. The method of claim 1 , wherein the first and second gas precursors are alternatively supplied.
3. The method of claim 1 , further comprising:
supplying a third gas precursor comprising an oxygen containing gas to the surface of the substrate.
4. The method of claim 3 , wherein the oxygen containing gas is 02.
5. The method of claim 1 , wherein the substrate comprises the first material and a second material different from the first material.
6. The method of claim 5 , wherein the first material is a silicon material or a metal material.
7. The method of claim 5 , wherein the second material is an insulating material.
8. The method of claim 7 , wherein the insulating material is at least one of SiO 2 , SiON, SiN, SiOC and SiOCH.
9. The method of claim 1 , wherein the metal containing precursor comprises molybdenum (Mo).
10. The method of claim 9 , wherein the metal containing precursor is at least one of molybdenum hexafluoride (MoF 6 ), Mo(NMe 2 ) 4 , MoCl 5 , MoCl 6 , Mo(CO) 6 , (C 6 H 6 )Mo(CO) 3 , (C 6 H 3 Me 3 )Mo(CO) 3 , (Ph[ t Bu]N) 3 Mo and Mo(allyl) 4 .
11. The method of claim 1 , wherein the silicon containing precursor is SiH 4 or Si 2 H 6 .
12. The method of claim 1 , wherein thermal annealing the metal containing material further comprises:
maintaining a substrate temperature greater than 250 degrees Celsius.
13. The method of claim 1 , wherein thermal annealing the metal containing material further comprises:
incorporating an additional element into the metal containing material.
14. The method of claim 1 , wherein a purge gas is pulsed between pulsing of the first gas precursor and the second gas precursor.
15. A method of forming a metal containing material on a substrate comprising:
performing an atomic layer deposition process by alternatively pulsing a first and a second gas precursor to a surface of a substrate comprising a first and a second material, wherein the first gas precursor comprises a metal containing gas;
selectively forming a metal containing material on the first material of the substrate, wherein the metal containing layer is a MoSiO layer; and
thermally annealing the metal containing material.
16. The method of claim 15 , wherein the metal containing gas is at least one of molybdenum hexafluoride (MoF 6 ), Mo(NMe 2 ) 4 , MoCl 5 , MoCl 6 , Mo(CO) 6 , (C 6 H 6 )Mo(CO) 3 , (C 6 H 3 Me 3 )Mo(CO) 3 , (Ph[ t Bu]N) 3 Mo and Mo(allyl) 4 .
17. The method of claim 15 , further comprising:
maintaining a substrate temperature less than 150 degrees Celsius while performing the atomic layer deposition process.
18. A method of forming a metal containing material on a substrate comprising:
selectively forming a metal containing layer on a silicon material on a substrate than on an insulating material on the substrate by an atomic layer deposition process, wherein the metal containing layer is a MoSiO layer; and
maintaining a substrate temperature less than 150 degrees Celsius while performing the atomic layer deposition process.