Image sensor comprising a grid pattern and a conductive pattern
An image sensor is provided. An image sensor includes: a substrate including an active pixel sensor region, an optical black sensor region, and a boundary region provided between the active pixel sensor region and the optical black sensor region; a photoelectric conversion element provided inside the substrate on the boundary region; a passivation layer provided on the substrate; a grid trench formed on the boundary region of the substrate and extending from an upper surface of the passivation layer toward an inside of the passivation layer; grid patterns, each of the grid patterns being provided on the passivation layer on each of the active pixel sensor region and the boundary region of the substrate, at least a part of a grid pattern being provided inside the grid trench; and a color filter provided between the grid patterns.
1. An image sensor comprising:
a substrate including an active pixel sensor region, an optical black sensor region, and a boundary region provided between the active pixel sensor region and the optical black sensor region;
a photoelectric conversion element provided inside the substrate on the boundary region;
a passivation layer provided on the substrate;
a grid trench formed on the boundary region of the substrate, the grid trench comprising an inclined surface that extends from an upper surface of the passivation layer toward an inside of the passivation layer;
grid patterns, each of grid patterns being provided on the passivation layer on each of the active pixel sensor region and the boundary region of the substrate, at least a part of a grid pattern being provided inside the grid trench on the inclined surface such that a cross section view of the at least a part of the grid pattern includes a triangular shaped portion; and
a color filter provided between the grid patterns.
2. The image sensor of claim 1 , wherein the grid pattern includes a first barrier layer, and a low refractive index layer provided on the first barrier layer.
3. The image sensor of claim 1 , further comprising
a conductive pattern provided on the passivation layer on the boundary region of the substrate and the optical black sensor region of the substrate, the conductive pattern being in contact with the grid pattern.
4. The image sensor of claim 3 , wherein at least a part of the conductive pattern is provided inside the grid trench.
5. The image sensor of claim 3 , wherein the conductive pattern includes a second barrier layer, and a metal layer provided on the second barrier layer.
6. The image sensor of claim 3 , wherein at least a part of the conductive pattern is provided below the grid pattern inside the grid trench.
7. The image sensor of claim 1 , wherein the grid trench extends into an inside of the substrate.
8. The image sensor of claim 7 , further comprising:
an element isolation film provided between photoelectric conversion elements inside the substrate,
wherein the grid pattern is provided inside the grid trench being in contact with the element isolation film.
9. The image sensor of claim 1 , wherein a first height in a vertical direction of the grid pattern provided on the upper surface of the passivation layer is smaller than a second height in the vertical direction of the grid pattern which overlaps the grid trench in the vertical direction.
10. The image sensor of claim 1 , wherein the grid pattern, which is provided at an outermost part of the active pixel sensor region of the substrate and the boundary region of the substrate, completely fills the grid trench.
11. An image sensor comprising:
a substrate;
a photoelectric conversion element provided inside the substrate;
a passivation layer provided on the substrate;
a grid trench extending from an upper surface of the passivation layer toward an inside of the substrate;
a grid pattern provided on the passivation layer and at least partially provided inside the grid trench; and
a conductive pattern provided on the passivation layer and at least partially provided inside the grid trench, the conductive pattern being in contact with a side wall of the grid pattern,
wherein a first height in a vertical direction of the grid pattern provided on the upper surface of the passivation layer is smaller than a second height in the vertical direction of the grid pattern which overlaps the grid trench in the vertical direction, and
wherein an upper surface of the grid pattern is at a level higher than an upper surface of the conductive pattern.
12. The image sensor of claim 11 , wherein the conductive pattern is in contact with the substrate inside the grid trench.
13. The image sensor of claim 11 , wherein a third height in the vertical direction of the conductive pattern provided on the upper surface of the passivation layer is smaller than a fourth height in the vertical direction of the conductive pattern which overlaps the grid trench in the vertical direction.
14. The image sensor of claim 11 , further comprising:
a color filter provided between grid patterns; and
a microlens provided on the color filter.
15. The image sensor of claim 11 , wherein the grid pattern includes a first barrier layer, and a low refractive index layer provided on the first barrier layer.
16. The image sensor of claim 15 , wherein the first barrier layer is provided between the low refractive index layer and the conductive pattern.
17. The image sensor of claim 11 , further comprising:
an element isolation film provided between photoelectric conversion elements inside the substrate,
wherein the grid pattern provided inside the grid trench is in contact with the element isolation film.
18. The image sensor of claim 17 , wherein the conductive pattern provided inside the grid trench is in contact with the element isolation film.
19. The image sensor of claim 11 , wherein at least a part of the conductive pattern is provided below the grid pattern inside the grid trench.
20. An image sensor comprising:
a substrate including an active pixel sensor region, an optical black sensor region, and a boundary region provided between the active pixel sensor region and the optical black sensor region;
a photoelectric conversion element provided inside the substrate on the boundary region;
a passivation layer provided on the substrate;
a grid trench formed on the boundary region of the substrate, the grid trench comprising an inclined surface that extends from an upper surface of the passivation layer toward an inside of the substrate;
a grid pattern provided on the passivation layer on each of the active pixel sensor region of the substrate and the boundary region of the substrate, at least a part of the grid pattern being provided inside the grid trench on the inclined surface such that a cross section view of the at least a part of the grid pattern includes a triangular shaped portion;
a conductive pattern provided on the passivation layer on each of the boundary region and the optical black sensor region of the substrate, the conductive pattern being at least partially provided inside the grid trench, and being in contact with a side wall of the grid pattern;
a color filter provided between grid patterns and provided on the active pixel sensor region of the substrate;
a microlens provided on the color filter; and
an element isolation film provided between photoelectric conversion elements inside the substrate, the element isolation film being in contact with the grid pattern,
wherein a first height in a vertical direction of the grid pattern provided on the upper surface of the passivation layer is smaller than a second height in the vertical direction of the grid pattern which overlaps the grid trench in the vertical direction.