IP Library › Granted Patent US 11,996,430
Granted Patent B2
US 11,996,430 · App. 17/334,116 · Granted May 28, 2024

Dual image sensor

Inventors: Hyochul Kim (Yongin-si, KR); Younggeun Roh (Seoul, KR)
Assignee: SAMSUNG ELECTRONICS CO., LTD.
H01L27/14629H01L27/14621H01L27/14627H01L27/14643H01L27/148
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Quick Facts
Patent No.
US 11,996,430
App. No.
17/334,116
Granted
May 28, 2024
Kind
B2
Abstract

Provided are a dual image sensor including an image sensor including a first area and a second area, the first area and the second area including a plurality of pixels, respectively, a band-pass filter layer provided on the first area, the band-pass filter layer configured to transmit light emitted by an object and having a specific wavelength corresponding to physical property information of the object to the image sensor, and a planarization layer provided on the second area and on the same plane as the band-pass filter layer.

Claims (27)

1. An electronic device comprising:

an image sensor comprising a first area and a second area, each of the first area and the second area including a plurality of pixels;

a band-pass filter configured to, in response to an incidence of light that is emitted by an object and has a specific wavelength corresponding to physical property information of the object, resonate, pass and output the light through a band-pass filter layer to pixels of the first area overlapping the band-pass filter layer;

a first planarization layer provided on the second area;

a color filter layer provided on both the first planarization layer and the band-pass filter layer; and

a processor configured to obtain the physical property information of the object based on a detection result of the pixels included in the first area, and obtain image information of the object based on a detection result of the pixels included in the second area,

wherein the first planarization layer is surrounded by the band-pass filter layer, and the first planarization layer and the band-pass filter layer are corresponding to an entire area of an upper surface of the image sensor, and

wherein the band-pass filter layer comprises a first reflection layer, a resonant cavity layer, and a second reflection layer sequentially arranged from the image sensor.

2. The electronic device of claim 1 , further comprising a light source configured to emit light to the object.

3. The electronic device of claim 2 , further comprising a lens configured to focus light emitted from the object that is irradiated by the light emitted from the light source.

4. The electronic device of claim 1 , further comprising a plurality of first color filters provided on the second area and passing light having a specific wavelength corresponding to the image information.

5. The electronic device of claim 4 , wherein the plurality of first color filters comprises at least one of a red color filter, a green color filter, and a blue color filter.

6. The electronic device of claim 4 , further comprising a micro-lens array provided on the plurality of first color filters.

7. The electronic device of claim 6 , wherein the first planarization layer is provided between the plurality of first color filters and the second area.

8. The electronic device of claim 7 , wherein the first planarization layer has a thickness that is equal to or greater than a thickness of the band-pass filter layer.

9. The electronic device of claim 7 , wherein the first planarization layer comprises an insulating material.

10. The electronic device of claim 7 , wherein the band-pass filter layer surrounds the first planarization layer on the same plane of the image sensor.

11. The electronic device of claim 1 , wherein at least one of first color filters provided on the band-pass filter layer.

12. The electronic device of claim 11 , wherein a resonance wavelength of the band-pass filter layer does not overlap a wavelength filtered by the at least one of first color filters.

13. The electronic device of claim 1 , wherein the first area is a peripheral portion of the image sensor, and the second area is a central portion of the image sensor, the first area and the second area corresponding to the entire area of the upper surface of the image sensor.

14. The electronic device of claim 1 , wherein the image sensor comprises at least one of a charge-coupled device and a complementary metal-oxide semiconductor.

15. The electronic device of claim 1 , further comprising a second planarization layer provided on the band-pass filter layer.

16. The electronic device of claim 1 , wherein the electronic device is a wearable device.

17. The electronic device of claim 1 , further comprising a display displaying at least one of the physical property information and the image information.

18. The electronic device of claim 1 , further comprising a communication module transmitting at least one of the physical property information and the image information to an external device.

19. The electronic device of claim 1 , wherein the physical property information is information about a target material that is included in the object and has unique optical properties.

20. The electronic device of claim 19 , wherein the target material comprises at least one of high sensitivity C-reactive protein (hsCRP), MicroCRP, HbA1c (glycated hemoglobin), microalbumin, prostate specific antigen (PSA), alpha-fetoprotein (AFP), cardiac troponin I (cTnI), glucose, and C-reactive protein (CRP).

Priority Claims (1)
KR 10-2018-0117876 · Oct 2, 2018 · national
Continuity (2)
Continuation 16385503 · Apr 16, 2019
Related Publication 20210288097A1 · Sep 16, 2021