IP Library Granted Patent US 11,997,929
Granted Patent B2
US 11,997,929 · App. 17/422,321 · Granted May 28, 2024

Thermoelectric material and preparation method therefor

Inventors: Jongrae Lim (Seoul, KR); Jun Kim (Seoul, KR); Jooyoung Park (Seoul, KR); Jeonghun Son (Seoul, KR); Youngil Jang (Seoul, KR)
Assignee: LG ELECTRONICS INC.
H10N10/852H10N10/01H10N10/853H10N10/857
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Quick Facts
Patent No.
US 11,997,929
App. No.
17/422,321
Granted
May 28, 2024
Kind
B2
Abstract

The present invention relates to a thermoelectric material and, specifically, to a thermoelectric material capable of improving the figure of merit and a preparation method therefor. In the present invention, the thermoelectric material may comprise: a matrix compound having a composition of chemical formula 1 or 2; and particles having a composition of chemical formula 3 dispersed in the matrix compound. (AB 2 ) x (Bi 2 Se 2.7 Te 0.3 ) 1-x , (CB) x (Bi 2 Se 2.7 Te 0.3 ) 1-x , D y E z .

Claims (22)

1. A thermoelectric material comprising:

a matrix compound having a composition of Chemical Formula 1 or Chemical Formula 2 below;

nanoparticles having a composition of Chemical Formula 3 dispersed in the matrix compound, wherein the nanoparticles have a tellurium (Te)-based composition; and

grains having crystal orientation directions aligned in a same direction,

where:

(AB 2 ) x (Bi 2 Se 2.7 Te 0.3 ) 1-x ,  <Chemical Formula 1>

where A is a divalent cation element, B is a monovalent anion element, and x satisfies 0 <x≤0.4,

(CB) x (Bi 2 Se 2.7 Te 0.3 ) 1-x ,  <Chemical Formula 2>

where C is a monovalent cation element, B is a monovalent anion element, and x satisfies 0 <x≤0.4, and

Cu 2 Te,  <Chemical Formula 3>

wherein the copper (Cu) is contained in an amount of 1 to 5% by weight of the matrix compound and the tellurium (Te) is contained in an amount of 20 to 25% by weight of the matrix compound, and

wherein the nanoparticles are dispersed in the matrix compound in an amount of 26 to 30% by weight of the matrix compound and the thermoelectric material has an average grain size of 5 to 6 micron.

2. The thermoelectric material of claim 1 , wherein in Chemical Formula 1, A is any one selected from a group consisting of Cu, Ag, and a compound thereof.

3. The thermoelectric material of claim 1 , wherein in Chemical Formula 2, C is any one selected from a group consisting of Fe, Mn, Co, Cr, V, Nb, and compounds thereof.

4. The thermoelectric material of claim 1 , wherein the matrix compound has a layered structure.

5. The thermoelectric material of claim 4 , wherein the layered structure comprises:

a first layer containing Te; and

a second layer containing Bi.

6. The thermoelectric material of claim 1 ,

wherein the crystal orientation directions are aligned in a material usage direction of the thermoelectric material.

7. The thermoelectric material of claim 1 , wherein the nanoparticles are formed from a ribbon-shaped intermediate having a thickness of about 1 μm to 100 μm.

8. The thermoelectric material of claim 1 , wherein a doped CuI is distributed in a state of Cu+ and I− in a unit cell to generate an electric field in the thermoelectric material.

Assignments (1)
ASSIGNMENT OF ASSIGNOR'S INTEREST Recorded Jul 12, 2021
From: LIM, JONGRAE; KIM, JUN; PARK, JOOYOUNG; SON, JEONGHUN; JANG, YOUNGIL
To: LG ELECTRONICS INC.
Reel/Frame 056827/0747 →
Continuity (2)
Provisional Application 62793898 · Jan 18, 2019
Related Publication 20220102607A1 · Mar 31, 2022
Cited By (1)
US 12,296,383