Method for producing organometallic compound and thin film fabricated using organometallic compound obtained thereby
The present invention relates to a method for producing a high yield of an organometallic compound including a step of allowing a metal hexacarbonyl compound to react with a hexahydro-1,3,5-triazine compound, and a thin film having excellent properties, fabricated by depositing the produced organometallic compound.
1. A method for producing an organometallic compound, the method comprising a first step of synthesizing a compound of the following Formula 2 by allowing a metal hexacarbonyl compound to react with a compound of the following Formula 1;
a second step of synthesizing a compound of the following Formula 4 by allowing the compound of Formula 2 to react with a compound of the following Formula 3;
a third step of synthesizing a compound of the following Formula 6 by allowing the compound of Formula 4 to react with a compound of the following Formula 5,
wherein
R 1 to R 3 are each independently hydrogen or a linear or branched hydrocarbon having 1 to 4 carbon atoms,
R 4 is hydrogen or a linear or branched hydrocarbon having 1 to 3 carbon atoms,
R 5 and R 6 are each independently hydrogen or a linear or branched hydrocarbon having 1 to 4 carbon atoms,
R 7 to R 9 are hydrogen, and
M is tungsten (W).
2. The method of claim 1 , wherein the organometallic compound is a compound of the following Formula 7 or 8:
3. A method for fabricating a thin film, the method including steps of:
(1) feeding and depositing a vapor deposition precursor, which comprises an organometallic compound produced by the method of claim 1 , onto a substrate, and purging an unreacted portion of the vapor deposition precursor with inert gas; and
(2) feeding and allowing a reactant gas to react with the deposited vapor deposition precursor and purging an unreacted portion of the reactant gas,
wherein the reactant gas is activated by plasma,
a feeding time of the vapor deposition precursor in step (1) is 4 seconds or more, and
a feeding time of the reactant gas in step (2) is 8 seconds or more.
4. The method of claim 3 , wherein the reactant gas is any one or more selected from the group consisting of an oxidizing agent, a reducing agent, and a nitriding agent.
5. The method of claim 3 , wherein the thin film is deposited at a temperature of 350° C. or below and a growth rate of 0.21 Å/cycle or less.