Semiconductor device
Effective use is achieved of a region in a proximity of a joining plane of semiconductor substrates in a semiconductor device including a stacked semiconductor substrate in which multilayer wiring layers of a plurality of semiconductor substrates are electrically connected to each other. The stacked semiconductor substrate includes plural semiconductor substrates on each of which a multilayer wiring layer is formed. In this stacked semiconductor substrate, the multilayer wiring layers are joined together and electrically connected to each other. In the proximity of a joining plane of the plurality of semiconductor substrates, a conductor is formed. This conductor is formed such that it is electrified in a direction of the joining plane.
1. A semiconductor device, comprising:
a first semiconductor substrate including a first multilayer wiring layer; and
a second semiconductor substrate including a second multilayer wiring layer, wherein the first semiconductor substrate and the second semiconductor substrate are joined together with the first multilayer wiring layer and the second multilayer wiring layer directly connected to each other to form a plurality of conductors in a proximity of a joining plane of the of the first and second semiconductor substrates, wherein connection holes are formed in either or both of the first multilayer wiring layer and the second multilayer wiring layer, wherein rivets are fitted to the connection holes, and wherein the plurality of conductors are electrified in a direction of the joining plane.
2. The semiconductor device according to claim 1 , wherein
at least some of the plurality of conductors formed in the proximity of the joining plane have a plane long side equal to or greater than twice a width of a connection hole connection face.
3. The semiconductor device according to claim 1 , wherein
only one of the first multilayer wiring layer and the second multilayer wiring layer has the connection holes.
4. The semiconductor device according to claim 1 , wherein
at least some of the plurality of conductors formed in the proximity of the joining plane on a side of the first semiconductor substrate are not electrically connected to an opposing conductor on a side of the second semiconductor substrate.
5. The semiconductor device according to claim 1 , wherein
at least some of the plurality of conductors formed in the proximity of the joining plane are different in shape from an opposing conductor.
6. The semiconductor device according to claim 1 , wherein
at least some of the plurality of conductors formed in the proximity of the joining plane are arranged in a displaced relation to an opposing conductor by a predetermined direction in a direction of the joining plane.
7. The semiconductor device according to claim 1 , wherein
at least some of the plurality of conductors formed in the proximity of the joining plane have a shape having a plane aspect ratio higher than one.
8. The semiconductor device according to claim 7 , wherein
at least some of the plurality of conductors formed in the proximity of the joining plane are joined to an opposed conductor on the joining plane so as to cross with each other in a longitudinal direction on the joining plane.
9. The semiconductor device according to claim 7 , wherein
at least some of the plurality of conductors formed in the proximity of the joining plane are joined to an opposed conductor on the joining plane so as to extend in parallel in a longitudinal direction on the joining plane.
10. The semiconductor device according to claim 1 , wherein
at least some of the plurality of conductors formed in the proximity of the joining plane have a rectangular shape or an elliptical shape having a plane aspect ratio higher than one.
11. The semiconductor device according to claim 1 , wherein
at least some of the plurality of conductors formed in the proximity of the joining plane has a polygonal shape configured from a combination of rectangles having a plane aspect ratio higher than one.
12. The semiconductor device according to claim 1 , wherein
at least some of the plurality of conductors formed in the proximity of the joining plane are provided in a region that surrounds an inner side circumference of an input/output pad.
13. The semiconductor device according to claim 1 , wherein
at least some of the plurality of conductors formed in the proximity of the joining plane are provided in a rectangular region on an inner side of an input/output pad.
14. The semiconductor device according to claim 1 , wherein
at least some of the plurality of conductors formed in the proximity of the joining plane are provided in parallel to a power supply wiring.