Nanosheet-based semiconductor structure with dielectric pillar

1. A semiconductor structure comprising:

a first device disposed on a substrate, the first device comprising a first plurality of nanosheets, wherein the first plurality of nanosheets comprises a p-type material;

a second device disposed on the substrate, the second device comprising a second plurality of nanosheets, wherein the second plurality of nanosheets comprises an n-type material;

a dielectric isolation pillar extending vertically from within a top surface of the substrate and disposed between the first device and the second device;

a first shallow trench isolation region disposed at least partially within the substrate on a first lateral side of the first plurality of nanosheets; and

a second shallow trench isolation region disposed at least partially within the substrate on a first lateral side of the second plurality of nanosheets;

wherein a second lateral side of the first plurality of nanosheets extends from a first lateral side of the dielectric isolation pillar and a second lateral side of the second plurality of nanosheets extends from a second lateral side of the dielectric isolation pillar;

wherein each of the first plurality of nanosheets are in a staggered arrangement relative to each of the second plurality of nanosheets; and

wherein the first plurality of nanosheets and the second plurality of nanosheets are each of a uniform width.

2. The semiconductor structure according to claim 1 wherein the first plurality of nanosheets and the second plurality of nanosheets are in contact with the dielectric isolation pillar.

3. The semiconductor structure according to claim 1 wherein the p-type material comprises silicon germanium and wherein the n-type material comprise silicon.

4. The semiconductor structure according to claim 1 wherein the first device comprises a first given number of the first plurality of nanosheets and the second device comprises a second given number of the second plurality of nanosheets, wherein the first given number is different than the second given number.

5. The semiconductor structure according to claim 4 wherein the first given number of the first plurality of nanosheets is greater than the second given number of the second plurality of nanosheets.

6. The semiconductor structure according to claim 5 wherein the first plurality of nanosheets is vertical offset relative to the second plurality of nanosheets.

7. The semiconductor structure according to claim 1 wherein:

the first device includes one or more gate structures each having a first work function metal, and source and drain regions; and

the second device includes one or more gate structures each having a second work function metal, and source and drain regions.

8. The semiconductor structure according to claim 7 wherein the second work function metal is different from the first work function metal.

9. The semiconductor structure according to claim 1 including at least three gates disposed on the substrate.

10. The semiconductor structure according to claim 1 wherein the dielectric isolation pillar extends into the substrate a predetermined distance.

11. A semiconductor structure comprising:

a dielectric isolation pillar extending vertically from within a top surface of a substrate;

a pFET device comprising a first plurality of channel nanosheets disposed on a first lateral side of the dielectric isolation pillar and in contacting relation therewith;

an nFET device comprising a second plurality of channel nanosheets disposed on a second lateral side of the dielectric isolation pillar and in contacting relation therewith;

a first shallow trench isolation region disposed at least partially within the substrate on a first lateral side of the pFET device; and

a second shallow trench isolation region disposed at least partially within the substrate on a first lateral side of the nFET device;

wherein a second lateral side of the pFET device extends from the first lateral side of the dielectric isolation pillar and a second lateral side of the nFET device extends from the second lateral side of the dielectric isolation pillar;

wherein each of the first plurality of channel nanosheets are in a staggered arrangement relative to each of the second plurality of channel nanosheets; and

wherein the first plurality of channel nanosheets and the second plurality of channel nanosheets are each of a uniform width.

12. The semiconductor structure according to claim 11 wherein the first plurality of channel nanosheets of the pFET device comprise a first material and the second plurality of channel nanosheets of the nFET device comprise a second material different from the first material.

13. The semiconductor structure according to claim 12 wherein the first material comprises silicon germanium and wherein the second material comprises silicon.

14. The semiconductor structure according to claim 11 wherein the pFET device includes a first number of channel nanosheets and the nFET device includes a second number of channel nanosheets different from the first number.

15. The semiconductor structure according to claim 14 wherein the first number of channel nanosheets of the pFET device is greater than the second number of channel nanosheets of the nFET device.

16. The semiconductor structure according to claim 11 wherein the channel nanosheets of the pFET device are vertically offset relative to the channel nanosheets of the nFET device.

17. A method, comprising:

forming a first device on a semiconductor substrate, the first device comprising a first plurality of nanosheets, wherein the first plurality of nanosheets comprises a p-type material;

forming a second device on the semiconductor substrate, the second device comprising a second plurality of nanosheets, wherein the second plurality of nanosheets comprises an n-type material;

forming a dielectric isolation pillar extending vertically from within a top surface of the semiconductor substrate between the first device and the second device;

forming a first shallow trench isolation region at least partially within the semiconductor substrate on a first lateral side of the first plurality of nanosheets; and

forming a second shallow trench isolation region at least partially within the semiconductor substrate on a first lateral side of the second plurality of nanosheets;

wherein a second lateral side of the first plurality of nanosheets extends from a first lateral side of the dielectric isolation pillar and a second lateral side of the second plurality of nanosheets extends from a second lateral side of the dielectric isolation pillar;

wherein each of the first plurality of nanosheets are in a staggered arrangement relative to each of the second plurality of nanosheets; and

wherein the first plurality of nanosheets and the second plurality of nanosheets are each of a uniform width.

18. The method according to claim 17 , wherein the p-type material of the first plurality of nanosheets comprises silicon germanium and the n-type material of the second plurality of nanosheets comprises silicon.

19. The method according to claim 17 including contacting each of the first plurality of nanosheets and the second plurality of nanosheets with the dielectric isolation pillar.

20. The method according to claim 17 including arranging the first plurality of nanosheets in vertical offset relation relative to the second plurality of nanosheets.