Gate contact structures and cross-coupled contact structures for transistor devices
One illustrative integrated circuit (IC) product disclosed herein includes a first conductive source/drain contact structure of a first transistor with an insulating source/drain cap positioned above at least a portion of an upper surface of the first conductive source/drain contact structure and a gate-to-source/drain (GSD) contact structure that is conductively coupled to the first conductive source/drain contact structure and a first gate structure of a second transistor. In this example, the product also includes a gate contact structure that is conductively coupled to a second gate structure of a third transistor, wherein an upper surface of each of the GSD contact structure and the gate contact structure is positioned at a first level that is at a level that is above a level of an upper surface of the insulating source/drain cap.
1. An integrated circuit (IC) product, comprising:
a first conductive source/drain contact structure of a first transistor;
an insulating source/drain cap positioned above at least a portion of an upper surface of the first conductive source/drain contact structure, wherein the insulating source/drain cap physically contacts the upper surface of the first conductive source/drain contact structure;
a gate-to-source/drain (GSD) contact structure that is conductively coupled to the first conductive source/drain contact structure and a first gate structure of a second transistor, wherein an upper surface of the GSD contact structure is positioned at a first level that is at a level that is below a level of an upper surface of the insulating source/drain cap, and wherein the GSD contact structure physically contacts a side surface of the insulating source/drain cap, a side surface of the first conductive source/drain contact structure, and a top surface of the first conductive source/drain contact structure; and
a gate contact structure that is conductively coupled to a second gate structure of a third transistor, the third transistor including a second conductive source/drain contact structure and a second insulating source/drain cap positioned above an upper surface of the second conductive source/drain contact structure, wherein the gate contact structure physically contacts an upper surface of the second insulating source/drain cap of the third transistor, wherein an upper surface of the gate contact structure is positioned at a second level that is at a level that is above the first level.
2. The IC product of claim 1 , further comprising:
a layer of insulating material comprising a first insulating material, wherein at least a portion of the gate contact structure is positioned within the layer of insulating material; and
an insulating cap positioned above the GSD contact structure, wherein at least a portion of the insulating cap is positioned in the layer of insulating material and wherein the insulating cap comprises a second insulating material that is different than the first insulating material.
3. The IC product of claim 2 , wherein the first insulating material comprises silicon dioxide and wherein the second insulating material comprises one of silicon nitride or a low-k insulating material.
4. The IC product of claim 2 , wherein at least a portion of the insulating cap is positioned over an upper surface of the insulating source/drain cap.
5. The IC product of claim 2 , further comprising a first conductive line that is positioned vertically above at least a portion of the GSD contact structure, wherein the first conductive line is conductively coupled to the gate contact structure and wherein at least a portion of the insulating cap is positioned vertically between the first conductive line and the GSD contact structure.
6. The IC product of claim 5 , wherein the first conductive line physically contacts an upper surface of the insulating cap.
7. The IC product of claim 1 , wherein a bottom surface of the GSD contact structure physically contacts an entirety of an upper surface of the first gate structure of the second transistor.
8. The IC product of claim 1 , further comprising a first sidewall spacer positioned adjacent the first gate structure of the second transistor, wherein a bottom surface of the GSD contact structure physically contacts an upper surface of the first sidewall spacer.
9. An integrated circuit (IC) product, comprising:
a first conductive source/drain contact structure of a first transistor;
an insulating source/drain cap positioned above at least a portion of an upper surface of the first conductive source/drain contact structure, wherein the insulating source/drain cap physically contacts the upper surface of the first conductive source/drain contact structure;
a gate-to-source/drain (GSD) contact structure that is conductively coupled to the first conductive source/drain contact structure and a first gate structure of a second transistor, wherein an upper surface of the GSD contact structure is positioned at a first level that is at a level that is below a level of an upper surface of the insulating source/drain cap, and wherein the GSD contact structure physically contacts a side surface of the first conductive source/drain contact structure, a top surface of the first conductive source/drain contact structure, and a side surface of the insulating source/drain cap;
an insulating cap positioned above the GSD contact structure; and
a gate contact structure that is conductively coupled to a second gate structure of a third transistor, the third transistor including a second conductive source/drain contact structure and a second insulating source/drain cap positioned above an upper surface of the second conductive source/drain contact structure, wherein the gate contact structure physically contacts an upper surface of the second insulating source/drain cap of the third transistor, wherein an upper surface of the gate contact structure is positioned at a second level that is at a level that is above the first level.
10. The IC product of claim 9 , further comprising a layer of insulating material comprising a first insulating material, wherein at least a portion of the gate contact structure is positioned within the layer of insulating material, wherein at least a portion of the insulating cap is positioned in the layer of insulating material and wherein the insulating cap comprises a second insulating material that is different than the first insulating material.
11. The IC product of claim 10 , wherein the first insulating material comprises silicon dioxide and wherein the second insulating material comprises one of silicon nitride or a low-k insulating material.
12. The IC product of claim 10 , wherein at least a portion of the insulating cap is positioned over an upper surface of the insulating source/drain cap.
13. The IC product of claim 9 , further comprising a first conductive line that is positioned vertically above at least a portion of the GSD contact structure, wherein the first conductive line is conductively coupled to the gate contact structure and wherein at least a portion of the insulating cap is positioned vertically between the first conductive line and the GSD contact structure.
14. The IC product of claim 13 , wherein the first conductive line physically contacts an upper surface of the insulating cap.
15. The IC product of claim 9 , wherein a bottom surface of the GSD contact structure physically contacts an entirety of an upper surface of the first gate structure of the second transistor.
16. The IC product of claim 9 , further comprising a first sidewall spacer positioned adjacent the first gate structure of the second transistor, wherein a bottom surface of the GSD contact structure physically contacts an upper surface of the first sidewall spacer.