Display apparatus and method of manufacturing the same
A display apparatus includes a base substrate, an active pattern disposed on the base substrate, a gate insulation layer disposed on the active pattern, a gate electrode disposed on the gate insulation layer and overlapping the active pattern, a first insulation layer disposed on the gate electrode and having a total amount of hydrogen of about 5 atomic percent (at. %) to about 30 at. %, and a source electrode and a drain electrode which are disposed on the first insulation layer and are electrically connected to the active pattern.
1. A display apparatus, comprising:
a base substrate;
an active pattern disposed on the base substrate;
a gate insulation layer disposed on the active pattern;
a gate electrode disposed on the gate insulation layer and overlapping the active pattern;
a first insulation layer disposed on the gate electrode and comprising silicon (Si), nitrogen (N), and hydrogen (H);
a second insulation layer disposed on the first insulation layer;
a storage electrode disposed between the first insulation layer and the second insulation layer and overlapping the gate electrode; and
a source electrode and a drain electrode which are disposed on the second insulation layer and are electrically connected to the active pattern,
wherein the first insulation layer has a total amount of hydrogen of about 5 atomic percent to about 30 atomic percent, Si—H bond in the first insulation layer is about 0.1 atomic percent to about 10 atomic percent, and the first insulation layer has a reflective index of about 1.884 to about 2.312.
2. The display apparatus of claim 1 , wherein the gate electrode comprises:
a conductive layer comprising aluminum (Al) or aluminum alloy;
a first capping layer disposed on the conductive layer and comprising titanium nitride (TiNx); and
a second capping layer disposed on the first capping layer and comprising titanium (Ti).
3. The display apparatus of claim 2 , wherein an atomic ratio of nitrogen and titanium, which is a number of nitrogen atoms divided by a number of titanium atoms, contained in the first capping layer of the gate electrode is about 0.9 to about 1.2.
4. The display apparatus of claim 2 , wherein the active pattern comprises poly silicon.
5. The display apparatus of claim 1 ,
wherein the storage electrode comprises:
a conductive layer comprising aluminum (Al) or aluminum alloy;
a first capping layer disposed on the conductive layer and comprising titanium nitride (TiNx); and
a second capping layer disposed on the first capping layer and comprising titanium (Ti).
6. The display apparatus of claim 5 , wherein an atomic ratio of nitrogen and titanium, which is a number of nitrogen atoms divided by a number of titanium atoms, contained in the first capping layer of the gate electrode is about 0.9 to about 1.2.
7. The display apparatus of claim 1 , further comprising:
a via insulation layer disposed on the source and drain electrodes; and
a light emitting structure disposed on the via insulation layer.
8. The display apparatus of claim 7 , wherein the light emitting structure comprises:
a first electrode disposed on the via insulation layer, and electrically connected to the drain electrode;
a light emitting layer disposed on the first electrode; and
a second electrode disposed on the light emitting layer, and
wherein a thin film transistor comprising the active pattern, the gate electrode, the source electrode, and the drain electrode is a driving transistor for supplying a driving current to the light emitting structure.
9. A display apparatus, comprising:
a base substrate;
an active pattern disposed on the base substrate;
a gate insulation layer disposed on the active pattern;
a gate electrode disposed on the gate insulation layer and overlapping the active pattern;
a first insulation layer disposed on the gate electrode and having a total amount of hydrogen of about 5 atomic percent to about 30 atomic percent;
a second insulation layer disposed on the first insulation layer;
a storage electrode disposed between the first insulation layer and the second insulation layer and overlapping the gate electrode; and
a source electrode and a drain electrode which are disposed on the second insulation layer and are electrically connected to the active pattern.
10. The display apparatus of claim 9 , wherein the first insulation layer comprises silicon (Si), nitrogen (N), and hydrogen (H).
11. The display apparatus of claim 10 , wherein Si—H bond in the first insulation layer is about 0.1 atomic percent to about 10 atomic percent.
12. The display apparatus of claim 10 , wherein the first insulation layer has a reflective index of about 1.884 to about 2.312.