Direct graphene transfer and graphene-based devices
A method of forming a functionalized device substrate is provided that includes the steps of: forming a conductive layer on a growth substrate; applying a polymeric layer to a device substrate, wherein a coupling agent couples the polymeric layer to the device substrate; coupling the polymeric layer to the conductive layer on the growth substrate; and peeling the growth substrate from the conductive layer.
1. A functionalized device substrate, comprising:
a substrate defining a surface;
a polyimide layer disposed over the surface of the substrate, wherein an aminosilane couples the polyimide layer to the surface; and
a graphene layer coupled to the polyimide layer, wherein the graphene layer has a sheet resistance of from about 100 Ohm/sq to about 600 Ohm/sq.
2. The device substrate of claim 1 , wherein the substrate comprises at least one of a silicon wafer, a polymeric material, a glass, a glass-ceramic and a ceramic.
3. The device substrate of claim 1 , wherein the aminosilane is dispersed within the polyimide layer, as derived from about 0.1 wt. % to 10 wt. % aminosilane in a precursor mixture of a polyimide and a solvent.
4. The device substrate of claim 1 , wherein the aminosilane is an aminosilane layer.
5. A functionalized device substrate, comprising:
a substrate defining a surface;
a polyimide layer disposed over the surface of the substrate, wherein an aminosilane couples the polyimide layer to the surface; and
a graphene layer coupled to the polyimide layer, wherein the graphene layer has a sheet resistance of from about 100 Ohm/sq to about 600 Ohm/sq, and wherein the graphene layer is as-pressed against the polyimide layer at a pressure of from about 150 psi to about 350 psi.
6. The device substrate of claim 5 , wherein the substrate comprises at least one of a silicon wafer, a polymeric material, a glass, a glass-ceramic and a ceramic.
7. The device substrate of claim 5 , wherein the aminosilane is dispersed within the polyimide layer, as derived from about 0.1 wt. % to 10 wt. % aminosilane in a precursor mixture of a polyimide and a solvent.
8. The device substrate of claim 5 , wherein the aminosilane is an aminosilane layer.
9. The device substrate of claim 5 , wherein the graphene layer is pressed against the polyimide layer at a temperature of from about 50° C. to about 200° C.
10. The device substrate of claim 5 , wherein the graphene layer is pressed against the polyimide layer at a temperature of from about 129° C. to about 190° C.
11. A functionalized device substrate, comprising:
a substrate defining a surface;
a polymer layer disposed over the surface of the substrate, wherein an aminosilane couples the polymer layer to the surface; and
a graphene layer coupled to the polymer layer, wherein the graphene layer has a sheet resistance of from about 100 Ohm/sq to about 600 Ohm/sq, and further wherein the polymer layer is composed of a polyimide or a polythiophene.
12. The device substrate of claim 11 , wherein the substrate comprises at least one of a silicon wafer, a polymeric material, a glass, a glass-ceramic and a ceramic.
13. The device substrate of claim 11 , wherein the aminosilane is dispersed within the polymer layer, as derived from about 0.1 wt. % to 10 wt. % aminosilane in a precursor mixture of a polyimide and a solvent.
14. The device substrate of claim 11 , wherein the aminosilane is an aminosilane layer.
15. The device substrate of claim 11 , wherein the graphene layer has a sheet resistance of from about 100 Ohm/sq to about 400 Ohm/sq.
16. The device substrate of claim 1 , wherein the graphene layer has a sheet resistance of from about 100 Ohm/sq to about 400 Ohm/sq.
17. The device substrate of claim 5 , wherein the graphene layer has a sheet resistance of from about 100 Ohm/sq to about 400 Ohm/sq.