Single process volume to perform high-pressure and low-pressure processes with features to reduce cross-contamination
Embodiments include a processing tool for processing substrates in a low processing pressure and a high processing pressure. In an embodiment, the processing tool comprises a chamber body and a pedestal in the chamber body. In an embodiment, the pedestal is displaceable, and the pedestal has a first surface and a second surface opposite the first surface. In an embodiment, the processing tool further comprises a first gas port for supplying gasses into the chamber body and a first exhaust positioned above the first surface of the pedestal. In an embodiment, the embodiment further comprises a second gas port for supplying gasses into the chamber body and a second exhaust positioned below the second surface of the pedestal.
1. A processing tool comprising:
a chamber body;
a pedestal in the chamber body, wherein the pedestal is displaceable between an upper processing location and a lower processing location, and wherein the pedestal has a first surface and a second surface opposite and below the first surface;
a first gas port for supplying gasses into the chamber body, wherein the first gas port passes through a top surface of the chamber body;
a first exhaust positioned above the first surface of the pedestal, wherein the first exhaust passes through a sidewall of the chamber body;
a second gas port for supplying gasses into the chamber body, wherein the second gas port passes through a bottom surface of the chamber body, the bottom surface opposite the top surface, wherein the second gas port vertically overlaps with the first gas port, and wherein the pedestal extends vertically over the second gas port; and
a second exhaust below the first exhaust, the second exhaust positioned below the second surface of the pedestal when the pedestal is in the lower processing location, wherein the processing tool is configured to process a substrate in the upper processing location with a first processing operation at a first pressure to form a first film on the substrate, and then to process the substrate in the lower processing location with a second processing operation at a second pressure to form a second film on the substrate, the second pressure lower than the first pressure.
2. The processing tool of claim 1 , wherein an edge of the pedestal is separated from surfaces of the chamber body.
3. The processing tool of claim 1 , further comprising a cross-contamination feature that interfaces with the pedestal.
4. The processing tool of claim 3 , wherein the pedestal directly contacts the cross-contamination feature.
5. The processing tool of claim 3 , wherein the pedestal is separated from the cross-contamination feature by an elastomer seal.
6. The processing tool of claim 1 , further comprising:
an off-axis chamber portion, wherein the off-axis chamber portion comprises a sputtering target.
7. The processing tool of claim 1 , wherein the first gas port supplies first processing gasses into the chamber body for the first processing operation.
8. The processing tool of claim 7 , wherein the first pressure of the first processing operation is greater than 1 Torr.
9. The processing tool of claim 1 , wherein the second gas port supplies second processing gasses into the chamber body for the second processing operation.
10. The processing tool of claim 9 , wherein the second pressure of the second processing operation is less than 1 Torr.
11. The processing tool of claim 9 , wherein the second gas port further supplies an inert gas into the chamber body during the first processing operation, wherein the inert gas comprises one or more of Ar, He, and N 2 .