Word line driver array and memory
Embodiments of the present application relate to the field of semiconductors, and provide a word line driver array and a memory. The word line driver array at least includes: a first transistor, a third transistor, a fourth transistor and a second transistor arranged sequentially, as well as a fourth word line, a first word line, a second word line and a third word line parallel to each other, wherein the fourth word line is connected to a drain of the fourth transistor, the first word line is connected to a drain of the first transistor, the second word line is connected to a drain of the second transistor, and the third word line is connected to a drain of the third transistor.
1. A word line driver array, comprising:
a first transistor, a third transistor, a fourth transistor and a second transistor arranged sequentially, as well as a fourth word line, a first word line, a second word line and a third word line parallel to each other, wherein the fourth word line is connected to a drain of the fourth transistor, the first word line is connected to a drain of the first transistor, the second word line is connected to a drain of the second transistor, and the third word line is connected to a drain of the third transistor; and
wherein a direction that a source of a transistor faces toward a drain of the transistor is recorded as a source-drain orientation of the transistor, and source-drain orientations of adjacent transistors are opposite; and
wherein gates of the adjacent transistors are at least partially staggered in an arrangement direction of word lines; and two drains of the adjacent transistors are located between two corresponding sources in the arrangement direction of the word lines; and
wherein in the arrangement direction of the word lines, the drain of the third transistor is located between the drain of the first transistor and a source of the first transistor, and the drain of the first transistor is located between a source of the third transistor and the drain of the third transistor.
2. The word line driver array according to claim 1 , wherein the fourth word line, the first word line, the second word line and the third word line each are a straight line.
3. The word line driver array according to claim 2 , wherein drains of the adjacent transistors are staggered in the arrangement direction of the word lines.
4. The word line driver array according to claim 2 , wherein drains of different transistors arranged at an interval are staggered in the arrangement direction of the word lines.
5. The word line driver array according to claim 1 , wherein the first word line is located between the fourth word line and the third word line.
6. The word line driver array according to claim 1 , wherein the second word line is located between the first word line and the third word line.
7. The word line driver array according to claim 1 , wherein in the arrangement direction of the word lines, a gate of the fourth transistor is located between a gate of the first transistor and a gate of the third transistor.
8. The word line driver array according to claim 7 , wherein in the arrangement direction of the word lines, the drain of the fourth transistor is located between the drain of the first transistor and the source of the third transistor, and a source of the fourth transistor is located between the source of the first transistor and the drain of the third transistor.
9. The word line driver array according to claim 1 , wherein in the arrangement direction of the word lines, a gate of the third transistor is located between a gate of the fourth transistor and a gate of the second transistor.
10. The word line driver array according to claim 9 , wherein in the arrangement direction of the word lines, the source of the third transistor is located between the drain of the fourth transistor and a source of the second transistor, and the drain of the third transistor is located between a source of the fourth transistor and the drain of the second transistor.
11. The word line driver array according to claim 1 , wherein the gates of the adjacent transistors are different portions of a same conductive layer.
12. The word line driver array according to claim 1 , wherein in an arrangement direction of transistors, a width of the source of the transistor is greater than a width of the drain of the transistor.
13. A memory, comprising a plurality of the word line driver arrays arranged sequentially according to claim 1 , wherein an arrangement direction of the word line driver arrays is the same as the arrangement direction of the word lines.
14. A word line driver array, comprising:
a first transistor, a third transistor, a fourth transistor and a second transistor arranged sequentially, as well as a fourth word line, a first word line, a second word line and a third word line parallel to each other, wherein the fourth word line is connected to a drain of the fourth transistor, the first word line is connected to a drain of the first transistor, the second word line is connected to a drain of the second transistor, and the third word line is connected to a drain of the third transistor; and
wherein a direction that a source of a transistor faces toward a drain of the transistor is recorded as a source-drain orientation of the transistor, and source-drain orientations of adjacent transistors are opposite; and
wherein gates of the adjacent transistors are at least partially staggered in an arrangement direction of word lines; and
wherein in the arrangement direction of the word lines, a gate of the third transistor is located between a gate of the fourth transistor and a gate of the second transistor; and
wherein in the arrangement direction of the word lines, a source of the third transistor is located between the drain of the fourth transistor and a source of the second transistor, and the drain of the third transistor is located between a source of the fourth transistor and the drain of the second transistor.