Semiconductor device including cation species, manufacturing method thereof, and electronic equipment
There is provided a semiconductor device including a channel portion, and a gate electrode provided on a side opposite to the channel portion with a gate insulating film interposed between the gate electrode and the channel portion, in which the gate insulating film incudes a first portion having a first transition metal oxide, and a second portion having a second transition metal oxide and cation species and having a concentration of the cation species different from the first portion.
1. A semiconductor device, comprising:
a channel portion; and
a gate electrode provided on a side opposite to the channel portion with a gate insulating film interposed between the gate electrode and the channel portion,
wherein the gate insulating film incudes a first portion having a first transition metal oxide, and a second portion having a second transition metal oxide and cation species and having a concentration of the cation species different from the first portion, and
wherein the first portion does not include the cation species.
2. The semiconductor device according to claim 1 , wherein a transition metal element contained in the first transition metal oxide, and a transition metal element contained in the second transition metal oxide each include at least one of Hf and Zr.
3. The semiconductor device according to claim 1 , wherein the first transition metal oxide is identical to the second transition metal oxide.
4. The semiconductor device according to claim 1 , wherein a film thickness of the first portion and a film thickness of the second portion are 2 nm or more and 30 nm or less.
5. The semiconductor device according to claim 1 , wherein the cation species includes at least one of Si, Ge, Sn, Al, Ga, In, Sr, Sc, Y, La, Ti, Ce, Nb, Ta, and Gd.
6. The semiconductor device according to claim 1 , wherein the cation species in the second portion has a concentration gradient.
7. The semiconductor device according to claim 1 , wherein a dielectric constant of the first portion is lower than a dielectric constant of the second portion.
8. The semiconductor device according to claim 1 , wherein the first portion is provided extending over side surfaces of the gate electrode.
9. The semiconductor device according to claim 8 , further comprising:
a sidewall portion provided in contact with the gate insulating film,
wherein the first portion only is sandwiched between the gate electrode and the sidewall portion.
10. The semiconductor device according to claim 1 , wherein the gate insulating film is provided such that a plurality of films is stacked on top of another.
11. The semiconductor device according to claim 1 , wherein the channel portion is provided in a semiconductor substrate.
12. The semiconductor device according to claim 1 , wherein the channel portion is provided in a semiconductor layer which is provided in a projecting manner.
13. A manufacturing method of a semiconductor device, comprising:
forming a channel portion; and
forming a gate electrode provided on a side opposite to the channel portion with a gate insulating film interposed between the gate electrode and the channel portion,
wherein the gate insulating film is formed so as to include a first portion having a first transition metal oxide, and a second portion having a second transition metal oxide and cation species and having a concentration of the cation species different from the first portion, and
wherein the first portion does not include the cation species.
14. The manufacturing method of a semiconductor device according to claim 13 , wherein the cation species is doped through an ion implantation technique.
15. Electronic equipment comprising:
a channel portion; and
a gate electrode provided on a side opposite to the channel portion with a gate insulating film interposed between the gate electrode and the channel portion,
wherein the gate insulating film incudes a first portion having a first transition metal oxide, and a second portion having a second transition metal oxide and cation species and having a concentration of the cation species different from the first portion, and
wherein the first portion does not include the cation species.
16. The electronic equipment according to claim 15 , wherein a transition metal element contained in the first transition metal oxide, and a transition metal element contained in the second transition metal oxide each include at least one of Hf and Zr.
17. The electronic equipment according to claim 15 , wherein the first transition metal oxide is identical to the second transition metal oxide.
18. The electronic equipment according to claim 15 , wherein a film thickness of the first portion and a film thickness of the second portion are 2 nm or more and 30 nm or less.
19. The electronic equipment according to claim 15 , wherein the cation species includes at least one of Si, Ge, Sn, Al, Ga, In, Sr, Sc, Y, La, Ti, Ce, Nb, Ta, and Gd.
20. The electronic equipment according to claim 15 , wherein the cation species in the second portion has a concentration gradient.