Multi-layer silicon photonics apparatus
Embodiments of the present disclosure are directed to low numerical aperture (NA) optical couplers, or spot size converters, that include a lateral taper section and/or a vertical adiabatic taper section. In embodiments, the optical couplers may be positioned on a silicon substrate proximate to V-grooves within the substrate to contain optical fibers to self-align and to couple with the optical couplers. Other embodiments may be described and/or claimed.
1. A silicon photonics integrated apparatus, comprising:
a first layer with a first side (S 11 ) and a second side (S 12 ) opposite the first side (S 11 ) that are substantially parallel, the first side (S 11 ) including an embedded optical interface extending partially down a length a of a center plane of the first layer from a front side of the first layer that is substantially perpendicular to the first side (S 11 ) and the second side (S 12 );
a second layer having a first side (S 21 ) and a second side (S 22 ) opposite the first side (S 21 ) that are substantially parallel, the first side (S 21 ) being coupled with the second side (S 22 ), the first layer overlapping the second layer, and the second layer being symmetrical along the center plane; and
a third layer having a first side (S 31 ) and a second side (S 32 ) opposite the first side (S 31 ), the first side (S 31 ) being coupled with the second side (S 32 );
wherein the second layer forms a rectangular cross section perpendicular to the center plane at width iv/at the front side of the first layer, and extending down a length b of the center plane where b is greater than a;
wherein the second layer further forms a lateral taper away from the center plane from length b to length c, with a rectangular cross section perpendicular to the center plane at length c having a width w 2 , where w 2 is greater than w 1 ;
the third layer does not overlap a portion of the second layer, and the third layer is symmetrical along the center plane; and
wherein the third layer further forms a lateral taper away from the center plane from length c to length d, with a rectangular cross-section perpendicular to the center plane at length c having a width w 3 , where w 3 is less than or equal to w 2 , and a width of the rectangular cross-section perpendicular to the center plane at length d is w 4 , where w 4 is greater than w 3 .
2. The apparatus of claim 1 , further comprising wherein the first side (S 31 ) and the second side (S 32 ) are substantially parallel.
3. The apparatus of claim 1 , wherein the third layer further forms a vertical taper away from the first side (S 31 ).
4. The apparatus of claim 1 , wherein the first, second and third layers are waveguide layers.
5. The apparatus of claim 1 , wherein the first, second and third layers are silicon nitride (SiN) layers or silicon oxy nitride layers.
6. The apparatus of claim 1 , wherein w 3 =w 2 .
7. A method for manufacturing a silicon photonics integrated apparatus, the method comprising:
applying a first layer having a first side (S 11 ) and a second side (S 12 ) opposite the first side (S 11 ) that are substantially parallel, the first side (S 11 ) including an embedded optical interface extending partially down a length a of a center plane of the first layer from a front side of the first layer that is substantially perpendicular to the first side (S 11 ) and the second side (S 12 );
applying a second layer to the first layer, the second layer having a first side (S 21 ) and a second side (S 22 ) opposite the first side (S 21 ) that are substantially parallel, the first side (S 21 ) being coupled with the second side (S 22 ), the first layer overlapping the second layer, and the second layer being symmetrical along the center plane;
applying a third layer to the second layer, the third layer having a first side (S 31 ) and a second side (S 32 ) opposite the first side (S 31 ), the first side (S 31 ) being coupled with the second side (S 32 );
wherein the second layer forms a rectangular cross section perpendicular to the center plane at width w 1 at the front side of the first layer, and extending down a length b of the center plane where b is greater than a,
wherein the second layer further forms a lateral taper away from the center plane from length b to length c, with a rectangular cross section perpendicular to the center plane at length c having a width w 2 , where w 2 is greater than w 1 ;
wherein the third layer does not overlap a portion of the second layer, and the third layer is symmetrical along the center plane; and
wherein the third layer further forms a lateral taper away from the center plane from length c to length d, with a rectangular cross-section perpendicular to the center plane at length c having a width w 3 , where w 3 is less than or equal to w 2 , and a width of the rectangular cross-section perpendicular to the center plane at length d is w 4 , where w 4 is greater than w 3 .
8. The method of claim 7 , further comprising, prior to applying the first layer, applying a buried oxide layer; and wherein the first layer is applied to the buried oxide layer.
9. The method of claim 8 , wherein the buried oxide layer is coupled with a substrate.
10. The method of claim 7 , further comprising wherein the first side (S 31 ) and the second side (S 32 ) are substantially parallel.
11. The method of claim 7 , wherein the third layer further forms a vertical taper away from the first side (S 31 ).
12. The method of claim 7 , wherein the first, second, and third layers are silicon nitride (SiN) layers or silicon oxy nitride layers.
13. The method of claim 7 , wherein w 3 =w 2 .