Dipole-engineered high-k gate dielectric and method forming same
A method includes forming an oxide layer on a semiconductor region, and depositing a first high-k dielectric layer over the oxide layer. The first high-k dielectric layer is formed of a first high-k dielectric material. The method further includes depositing a second high-k dielectric layer over the first high-k dielectric layer, wherein the second high-k dielectric layer is formed of a second high-k dielectric material different from the first high-k dielectric material, depositing a dipole film over and contacting a layer selected from the first high-k dielectric layer and the second high-k dielectric layer, performing an annealing process to drive-in a dipole dopant in the dipole film into the layer, removing the dipole film, and forming a gate electrode over the second high-k dielectric layer.
1. A device comprising:
a first semiconductor region;
a first oxide layer on the first semiconductor region;
a first high-k dielectric layer on the first oxide layer and comprising a first high-k dielectric material;
a second high-k dielectric layer comprising a second high-k dielectric material different from the first high-k dielectric material, wherein the second high-k dielectric layer is overlying and contacts the first high-k dielectric layer;
a first dipole dopant in the first high-k dielectric layer and the second high-k dielectric layer, wherein a first peak concentration of the first dipole dopant is at a first top surface of the first high-k dielectric layer or a second top surface of the second high-k dielectric layer;
a gate electrode over the second high-k dielectric layer; and
a source/drain region on a side of the gate electrode.
2. The device of claim 1 , wherein the first dipole dopant comprises lanthanum.
3. The device of claim 1 , wherein the first dipole dopant comprises aluminum.
4. The device of claim 1 , wherein the first peak concentration of the first dipole dopant is at the first top surface, and the device further comprises a second dipole dopant different from the first dipole dopant, wherein the second dipole dopant has a second peak concentration at the second top surface.
5. The device of claim 4 , wherein a first one of the first dipole dopant and the second dipole dopant is lanthanum, and a second one of the first dipole dopant and the second dipole dopant is aluminum, and both of lanthanum and aluminum are diffused into each of the first high-k dielectric layer and the second high-k dielectric layer.
6. The device of claim 1 , wherein the second high-k dielectric layer has a lower k value than the first high-k dielectric layer.
7. The device of claim 1 , wherein the first semiconductor region comprises a semiconductor fin.
8. The device of claim 1 , wherein the source/drain region is a p-type region.
9. The device of claim 1 , wherein the source/drain region is an n-type region.
10. The device of claim 1 further comprising:
a second semiconductor region;
a second oxide layer on the second semiconductor region;
a third high-k dielectric layer on the second oxide layer and comprising the first high-k dielectric material;
a fourth high-k dielectric layer comprising the second high-k dielectric material, wherein the fourth high-k dielectric layer is overlying and is in contact with the third high-k dielectric layer; and
a second dipole dopant in the third high-k dielectric layer and the fourth high-k dielectric layer, wherein a third peak concentration of the second dipole dopant is at a third top surface of the fourth high-k dielectric layer.
11. A device comprising:
a first transistor comprising:
a first portion of a first high-k dielectric layer;
a first portion of a second high-k dielectric layer, wherein the second high-k dielectric layer is over the first high-k dielectric layer, and wherein the first high-k dielectric layer and the second high-k dielectric layer have different k values;
a first dipole dopant having a first peak concentration at an interface between the first portion of the first high-k dielectric layer and the first portion of the second high-k dielectric layer; and
a second transistor comprising:
a second portion of the first high-k dielectric layer;
a second portion of the second high-k dielectric layer; and
a second dipole dopant having a second peak concentration at a top surface of the second portion of the second high-k dielectric layer.
12. The device of claim 11 , wherein the first dipole dopant is same as the second dipole dopant.
13. The device of claim 11 , wherein the first dipole dopant is different from the second dipole dopant.
14. The device of claim 11 , wherein the first dipole dopant and the second dipole dopant are selected from lanthanum and aluminum.
15. The device of claim 11 , wherein a first one of the first dipole dopant and the second dipole dopant is lanthanum, and a second one of the first dipole dopant and the second dipole dopant is aluminum.
16. The device of claim 15 , wherein the first transistor and the second transistor are of a same conductivity type.
17. A device comprising:
a semiconductor fin;
a first high-k dielectric layer comprising a first high-k dielectric material, wherein the first high-k dielectric layer is on the semiconductor fin;
a second high-k dielectric layer comprising a second high-k dielectric material different from the first high-k dielectric material, wherein the second high-k dielectric layer is overlying and contacts the first high-k dielectric layer;
a dipole dopant in the first high-k dielectric layer and the second high-k dielectric layer, wherein the dipole dopant has a peak concentration at an interface between the first high-k dielectric layer and the second high-k dielectric layer;
a gate electrode over the second high-k dielectric layer; and
a source/drain region on a side of the gate electrode.
18. The device of claim 17 , wherein the source/drain region is an n-type region, and the dipole dopant is an n-type dopant.
19. The device of claim 17 , wherein the source/drain region is an n-type region, and the dipole dopant is a p-type dopant.
20. The device of claim 17 , wherein from the interface going into the first high-k dielectric layer and the second high-k dielectric layer, dipole dopant concentrations of the dipole dopant gradually reduce.