Semiconductor device package and light irradiation device comprising the same

1. A semiconductor device package comprising:

a substrate;

an electrode disposed on the substrate;

a semiconductor device and a protective device which are disposed on the electrode;

a dummy electrode disposed on the substrate to form a closed loop and disposed to be spaced apart from the electrode along an edge of the substrate;

a reflective member disposed on the dummy electrode and having an outer surface, an inner surface surrounding the semiconductor device and forming a cavity, and a bottom surface facing the substrate; and

a light-transmitting member disposed on the reflective member and covering the cavity,

wherein the inner surface includes:

a first surface adjacent to the substrate; and

a second surface extending from the first surface toward the light-transmitting member and having a parabolic shape, and

wherein the bottom surface of the reflective member has a first recess disposed on the protective device between the dummy electrode and the inner surface.

2. The semiconductor device package according to claim 1 , wherein the reflective member has a horizontal cross section of an outer surface including a hexagon.

3. The semiconductor device package according to claim 1 , wherein the substrate has a horizontal cross section including a hexagon.

4. The semiconductor device package according to claim 1 , wherein the light-transmitting member includes:

a plate unit disposed on the reflective member;

a first lens unit disposed on the plate unit; and

a second lens unit disposed on a lower portion of the plate unit, and

wherein the plate unit includes a first stepped portion on which the reflective member is disposed and the maximum diameter of the first lens unit and second lens unit is smaller than the maximum diameter of the cavity.

5. The semiconductor device package according to claim 1 , wherein the electrode includes:

a first electrode disposed on the substrate and on which the semiconductor device and the protective device are disposed; and

a second electrode disposed on the substrate,

wherein the second electrode includes:

a first wire electrically connecting the semiconductor device to the second electrode; and

a second wire electrically connecting the protective device to the second electrode, and

wherein the second electrode is disposed to be spaced apart from the first electrode in a first direction parallel to the top surface of the substrate,

the second electrode is overlapped with the semiconductor device in the first direction, and the protective device is disposed to deviate from the semiconductor device in a second direction perpendicular to the first direction, and

the first electrode includes a groove disposed between the semiconductor device and the protective device.

6. The semiconductor device package according to claim 5 , wherein the first electrode and the second electrode are overlapped with the first recess in a vertical direction, and

the side surface of the first recess is disposed to be spaced apart from the first electrode and the second electrode.

7. The semiconductor device package according to claim 5 , wherein the top surface of the first recess includes a sub-recess disposed on the protective device and the second wire, and

the height from the top surface of the substrate to the top surface of the sub recess is greater than the height from the top surface of the substrate to the top surface of the first recess.

8. The semiconductor device package according to claim 5 , comprising:

a first pad and a second pad disposed on the lower portion of the substrate;

a first through electrode passing through the substrate and connecting the first electrode and the first pad; and

a second through electrode passing through the substrate and connecting the second electrode and the second pad,

wherein the first pad and the second pad are symmetrically disposed with respect to a center line of the reflective member in the second direction, and

wherein the bottom surface of the reflective member includes a second recess disposed to face the first recess, and

the first electrode, the first through electrode, and the first pad are overlapped with the second recess in a vertical direction.

9. The semiconductor device package according to claim 1 , wherein the bottom surface of the reflective member includes a protrusion disposed inside the dummy electrode and rotation of the reflective member is prevented by the dummy electrode.

10. A light irradiation device comprising:

a circuit substrate; and

a plurality of semiconductor device packages disposed on the circuit substrate,

wherein the semiconductor device package includes:

a substrate;

an electrode disposed on the substrate;

a semiconductor device and a protective device which are disposed on the electrode;

a dummy electrode disposed on the substrate to form a closed loop and disposed to be spaced apart from the electrode along the edge of the substrate;

a reflective member disposed on the dummy electrode and having an outer surface, an inner surface surrounding the semiconductor device and forming a cavity, and a bottom surface facing the substrate; and

a light-transmitting member disposed on the reflective member and covering the cavity,

wherein the inner surface includes a first surface adjacent to the substrate and a second surface extending from the first surface toward the light-transmitting member and having a parabolic shape, and

wherein the bottom surface of the reflective member includes a first recess disposed on the protective device between the dummy electrode and the inner surface.

11. A semiconductor device package comprising:

a substrate;

an electrode disposed on the substrate;

a semiconductor device disposed on the electrode;

a reflective member disposed to surround the semiconductor device along an outer circumference of the substrate and including an inner surface forming a cavity and a bottom surface facing the substrate; and

a light-transmitting member disposed on the reflective member and covering the cavity,

wherein the inner surface includes:

a first surface adjacent to the substrate; and

a second surface extending from the first surface toward the light-transmitting member and having a parabolic shape,

wherein the bottom surface of the reflective member includes a first recess to form a gap between the first surface and the substrate,

wherein the first electrode includes:

a first part on which the semiconductor device is disposed and disposed to be spaced apart from one side of the second electrode at a first interval;

a second part extending from an upper end of the first part and disposed to be spaced apart from the other side adjacent to one side of the second electrode at a second interval; and

a groove formed between the first part of the first electrode and the second part of the first electrode to form a predetermined space.

12. The semiconductor device package according to claim 11 , wherein the light-transmitting member includes:

a plate unit disposed on the reflective member;

a first lens unit disposed on the plate unit; and

a second lens unit disposed under the plate unit,

wherein the plate unit includes a first stepped portion in which the reflective member is disposed, and

wherein the maximum diameter of the first lens unit and second lens unit is smaller than the maximum diameter of the cavity.

13. The semiconductor device package according to claim 11 , wherein the electrode includes:

a first electrode on which the semiconductor device is disposed; and

a second electrode disposed to be spaced apart from the semiconductor device.

14. The semiconductor device package according to claim 13 , wherein the first electrode further includes:

a protection device disposed on the second part,

wherein the semiconductor device is electrically connected to the second electrode through a first wire, and

wherein the protection device is electrically connected to the second electrode through a second wire.

15. The semiconductor device package according to claim 13 , wherein the first electrode is disposed to be spaced apart from one side of the second electrode at a third interval,

wherein the second electrode includes a protection device,

wherein the semiconductor device is electrically connected to the second electrode through a third wire, and

wherein the protection element is electrically connected to the first electrode through a fourth wire.

16. The semiconductor device package according to claim 13 , wherein the first electrode and the second electrode are overlapped with the first recess in a vertical direction, and

wherein a side surface of the first recess is disposed to be spaced apart from the first electrode and the second electrode.

17. The semiconductor device package according to claim 15 , wherein the top surface of the first recess includes a sub-recess disposed on the protection device, and

wherein the height from the top surface of the substrate to the top surface of the sub-recess is greater than the height from the top surface of the substrate to the top surface of the first recess.

18. The semiconductor device package according to claim 13 , comprising:

a first pad and a second pad disposed under the substrate;

a first through electrode passing through the substrate and connecting the first electrode and the first pad; and

a second through electrode passing through the substrate and connecting the second electrode and the second pad,

wherein the first recess is formed on the second electrode,

wherein the bottom surface of the reflective member includes a second recess formed so as to face the first recess, and

wherein the first electrode, the first through electrode, and the first pad are overlapped with the second recess in a vertical direction.