IP Library › Granted Patent US 12,027,091
Granted Patent B2
US 12,027,091 · App. 18/296,690 · Granted Jul 2, 2024

Display device

Inventors: Takashi Nakagawa (Kanagawa, JP); Takayuki Ikeda (Kanagawa, JP); Hidetomo Kobayashi (Kanagawa, JP); Hideaki Shishido (Kanagawa, JP); Shuichi Katsui (Kanagawa, JP); Kiyotaka Kimura (Kanagawa, JP)
Assignee: Semiconductor Energy Laboratory Co., Ltd.
G09G3/20G09G2300/0814G09G2310/027G09G2310/0297G09G2310/08H01L27/1225H01L29/7869
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Quick Facts
Patent No.
US 12,027,091
App. No.
18/296,690
Granted
Jul 2, 2024
Kind
B2
Abstract

A display device with a narrower frame can be provided. In the display device, a first layer, a second layer, and a third layer are provided to be stacked. The first layer includes a gate driver circuit and a data driver circuit, the second layer includes a demultiplexer circuit, and the third layer includes a display portion. In the display portion, pixels are arranged in a matrix, an input terminal of the demultiplexer circuit is electrically connected to the data driver circuit, and an output terminal of the demultiplexer circuit is electrically connected to some of the pixels. The gate driver circuit and the data driver circuit are provided to include a region overlapping some of the pixels. The gate driver circuit and the data driver circuit have a region where they are not strictly separated from each other and overlap each other. Five or more gate driver circuits and five or more data driver circuits can be provided.

Claims (86)

1. A display device comprising:

a first layer comprising a gate driver circuit and a data driver circuit;

a second layer stacked on the first layer, the second layer comprising a plurality of demultiplexer circuits; and

a third layer stacked on the second layer, the third layer comprising a display portion having a plurality pixels arranged in a matrix,

wherein at least one of the gate driver circuit and the data driver circuit includes a first transistor having a channel formation region comprising silicon,

wherein each of the plurality of demultiplexer circuits includes a second transistor having a channel formation region comprising a first metal oxide,

wherein each of the plurality of pixels includes a third transistor having a channel formation region comprising a second metal oxide,

wherein at least one of the plurality of demultiplexer circuits is electrically connected to the data driver circuit,

wherein the plurality of demultiplexer circuits are electrically connected to the display portion, and

wherein the gate driver circuit comprises a region overlapping the data driver circuit.

2. The display device according to claim 1 ,

wherein the display portion overlaps with the plurality of the demultiplexer circuits, the gate driver circuit, and the data driver circuit.

3. The display device according to claim 1 ,

wherein the first layer further includes a first circuit,

wherein the data driver circuit includes a plurality of second circuits electrically connected to the first circuit,

wherein the display portion overlaps with the gate driver circuit and the data driver circuit, and

wherein the display portion does not overlap with the first circuit.

4. The display device according to claim 3 ,

wherein the first circuit comprises a potential generator circuit, and

wherein each of the plurality of second circuits comprises a pass transistor logic circuit.

5. The display device according to claim 3 ,

wherein the first circuit is configured to generate a plurality of potentials with different levels from each other, and

wherein the plurality of second circuits are configured to receive image data and output any of the plurality of potentials generated by the first circuit based on digital value of the image data.

6. The display device according to claim 3 ,

wherein the number of the plurality of second circuits is smaller than the number of columns of the pixels arranged in the matrix.

7. The display device according to claim 6 ,

wherein the number of the plurality of second circuits is smaller than or equal to ½ the number of the columns of the pixels.

8. The display device according to claim 1 ,

wherein each of the first metal oxide and the second metal oxide comprises In, an element M (M is Al, Ga, Y, or Sn), and Zn.

9. A display device comprising:

a first layer comprising a gate driver circuit and a plurality of data driver circuits;

a second layer stacked on the first layer, the second layer comprising a plurality of demultiplexer circuits; and

a third layer stacked on the second layer, the third layer comprising a plurality of display portions arranged in a first matrix,

wherein each of the plurality of display portions comprises a plurality of pixels arranged in a second matrix,

wherein at least one of the gate driver circuit and the plurality of data driver circuits includes a first transistor having a channel formation region comprising silicon,

wherein each of the plurality of demultiplexer circuits includes a second transistor having a channel formation region comprising a first metal oxide,

wherein each of the plurality of pixels includes a third transistor having a channel formation region comprising a second metal oxide,

wherein a first one of the plurality of demultiplexer circuits is electrically connected to a first one of the plurality of data driver circuits and a first one of the plurality of display portions, and

wherein the gate driver circuit comprises a region overlapping at least the first one of the plurality of data driver circuits.

10. The display device according to claim 9 ,

wherein the first one of the plurality of display portions overlaps with the first one of the plurality of demultiplexer circuits, the gate driver circuit, and the first one of the plurality of data driver circuits.

11. The display device according to claim 9 ,

wherein the first layer further includes a first circuit,

wherein each of the plurality of data driver circuits includes a plurality of second circuits electrically connected to the first circuit, and

wherein the plurality of display portions do not overlap with the first circuit.

12. The display device according to claim 11 ,

wherein the first circuit comprises a potential generator circuit, and

wherein each of the plurality of second circuits comprises a pass transistor logic circuit.

13. The display device according to claim 11 ,

wherein the first circuit is configured to generate a plurality of potentials with different levels from each other, and

wherein the plurality of second circuits are configured to receive image data and output any of the plurality of potentials generated by the first circuit based on digital value of the image data.

14. The display device according to claim 11 ,

wherein the number of the plurality of second circuits is smaller than the number of columns of the plurality of pixels arranged in the second matrix.

15. The display device according to claim 14 ,

wherein the number of the plurality of second circuits is smaller than or equal to ½ the number of the columns of the plurality of pixels.

16. The display device according to claim 9 ,

wherein each of the first metal oxide and the second metal oxide comprises In, an element M (M is Al, Ga, Y, or Sn), and Zn.

17. A display device comprising:

a first layer comprising a plurality of gate driver circuits and a plurality of data driver circuits;

a second layer stacked on the first layer, the second layer comprising a plurality of demultiplexer circuits; and

a third layer stacked on the second layer, the third layer comprising a plurality of display portions arranged in a first matrix,

wherein each of the plurality of display portions comprises a plurality of pixels arranged in a second matrix,

wherein at least one of the plurality of gate driver circuits and the plurality of data driver circuits includes a first transistor having a channel formation region comprising silicon,

wherein each of the plurality of demultiplexer circuits includes a second transistor having a channel formation region comprising a first metal oxide,

wherein each of the plurality of pixels includes a third transistor having a channel formation region comprising a second metal oxide,

wherein a first one of the plurality of demultiplexer circuits is electrically connected to a first one of the plurality of data driver circuits and a first one of the plurality of display portions,

wherein a first one of the plurality of gate driver circuits comprises a region overlapping the first one of the plurality of data driver circuits, and

wherein a second one of the plurality of gate driver circuits comprises a region overlapping a second one of the plurality of data driver circuits.

18. The display device according to claim 17 ,

wherein the first one of the plurality of display portions overlaps with the first one of the plurality of demultiplexer circuits, the first one of the plurality of gate driver circuits, and the first one of the plurality of data driver circuits.

19. The display device according to claim 17 ,

wherein the first layer further includes a first circuit electrically connected to at least the first one of the plurality of data driver circuits,

wherein each of the plurality of data driver circuits includes a plurality of second circuits electrically connected to the first circuit, and

wherein the plurality of display portions do not overlap with the first circuit.

20. The display device according to claim 19 ,

wherein the first circuit comprises a potential generator circuit, and

wherein each of the plurality of second circuits comprises a pass transistor logic circuit.

21. The display device according to claim 19 ,

wherein the first circuit is configured to generate a plurality of potentials with different levels from each other, and

wherein the plurality of second circuits are configured to receive image data and output any of the plurality of potentials generated by the first circuit based on digital value of the image data.

22. The display device according to claim 19 ,

wherein the number of the plurality of second circuits is smaller than the number of columns of the plurality of pixels arranged in the second matrix.

23. The display device according to claim 22 ,

wherein the number of the plurality of second circuits is smaller than or equal to ½ the number of the columns of the plurality of pixels.

24. The display device according to claim 17 ,

wherein each of the first metal oxide and the second metal oxide comprises In, an element M (M is Al, Ga, Y, or Sn), and Zn.

Assignments (1)
ASSIGNMENT OF ASSIGNOR'S INTEREST Recorded Apr 6, 2023
From: NAKAGAWA, TAKASHI; IKEDA, TAKAYUKI; KOBAYASHI, HIDETOMO; SHISHIDO, HIDEAKI; KATSUI, SHUICHI; KIMURA, KIYOTAKA
To: SEMICONDUCTOR ENERGY LABORATORY CO., LTD.
Reel/Frame 063247/0067 →
Priority Claims (1)
JP 2019-089437 · May 10, 2019 · national
Continuity (2)
Continuation 17609497
Related Publication 20230386383A1 · Nov 30, 2023