Methods and systems for improving read and write of memory cells

1. A method comprising:

accessing an array of memory cells wherein a set of user data is stored in a plurality of memory cells of the memory array;

latching a current row address of a selected plurality of memory access;

comparing a last row address with the current row address;

if the result of the comparison is negative, executing a leakage compensation algorithm through a memory sensing circuitry.

2. The method of claim 1 further including:

refreshing the user data at any access of such a plurality of memory cells.

3. The method of claim 1 wherein said latching, comparing and executing the leakage compensation algorithm are completed in a time interval having a duration of half of time period tRC passing from the consecutive activation of two memory rows of a same memory bank and corresponding to an activate portion.

4. The method of claim 3 wherein the whole time period tRC includes a sub-period tRP of a pre-charge portion of the Row Access Signal (RAS) and in this sub-period a writing phase is performed.

5. The method of claim 3 wherein a first phase of the activate portion represents half of a write to read delay and is executed for “0” logic values while a remaining phase of the activate portion is dedicated to a sensing phase.

6. The method of claim 3 wherein the write to read delay is mapped inside a whole time period tRC full cycle.

7. The method of claim 1 wherein said plurality of memory cells is part of a codeword and special information are stored in association with the codeword; said further information concerning at least one of statistical distributions of the bits programmed in the memory cells, or a number of bits of the codeword, or applied threshold voltages values, and being downloaded in parallel during said latching, comparing and executing the leakage compensation algorithm.

8. The method of claim 1 comprising a first pseudo-activate command and a subsequent pseudo-precharge command related to a codeword of the memory array; said latching, comparing and executing the leakage compensation algorithm being performed during the pseudo-activate command.

9. The method of claim 8 further including read and/or write commands corresponding to standard DRAM commands.

10. The method of claim 9 wherein the write commands are executed during said pseudo-precharge command.

11. The method according to claim 1 , wherein the user data are encoded in a codeword having a number of bits exhibiting a first logic state in a range, the encoding comprising manipulating the codeword to constrain the number of bits exhibiting the first logic value in the range.

12. The method according to claim 11 , wherein the encoded user data have substantially a same number of bits exhibiting the first logic state and a second logic state, and wherein the memory cells exhibit a threshold voltage with a lower magnitude when the memory cells are in the first logic state, and a threshold voltage with a higher magnitude when the memory cells are in the second logic state, and wherein a logic state of a given cell is determined based on whether the memory cell exhibits the higher or the lower magnitude threshold voltage in response to an applied read voltage.

13. A memory device comprising:

an array of memory cells;

at least a codeword in the memory array including a set of user data and additional data information;

a memory controller configured to execute instructions for accessing the memory cells;

a circuit for accessing the memory cells, the circuit being operatively coupled with the array of memory cells and comprising:

an access circuit configured to apply to the memory array a read voltage to activate at least said codeword of memory cells; and

a measuring circuit portion in a sense circuit for measuring a leakage current value at an end of a precharge operation;

wherein the sense circuit is further configured to detect a leakage current flowing through non-selected memory cells coupled to a same digit line and to determine a feedback voltage value to be applied to a circuit node for compensating such a leakage current.

14. The memory device of claim 13 wherein the array of memory cells comprises a Self-Selecting Memory (SSM) or a 3D cross point (3D X Point) memory.

15. The memory device of claim 13 , further comprising leakage compensation circuit portion of the sense circuit is configured to be activated during a time interval having a duration of half of a time period tRC passing from consecutive activation of two memory rows of a same memory bank and corresponding to an activate portion of the memory access algorithm.

16. A system having a memory device according to claim 13 , further comprising:

a host device.