IP Library › Granted Patent US 12,027,381
Granted Patent B2
US 12,027,381 · App. 17/137,181 · Granted Jul 2, 2024

Apparatus for treating substrate and method for treating substrate

Inventors: Youngseop Choi (Chungcheongnam-do, KR); Young Hun Lee (Chungcheongnam-do, KR); Jinwoo Jung (Seoul, KR); Miso Park (Daejeon, KR)
Assignee: SEMES CO., LTD.
H01L21/67034B08B3/08B08B3/10B08B7/0021B08B13/00H01L21/67207H01L21/67023H01L21/67167H01L21/68707
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Quick Facts
Patent No.
US 12,027,381
App. No.
17/137,181
Granted
Jul 2, 2024
Kind
B2
Abstract

Embodiments of the inventive concept provide an apparatus for treating a substrate. According to an exemplary embodiment, an apparatus for treating a substrate comprises a first valve and a second valve sequentially installed along a direction from a fluid supplying source to a high-pressure chamber in the supply line; a branch line branching from the supply line between the first valve and the second valve and connected to an exhaust line; a third valve installed on the branch line; an exhaust unit exhausting the process fluid inside the high-pressure chamber; and a controller, wherein the controller is configured to perform, before a transfer robot transfers the substrate to the high-pressure chamber for treating the substrate, a first operating of opening the first valve and closing the second valve and a third valve, and a second operating of closing the first valve and the second valve, and opening the third valve.

Claims (42)

1. An apparatus for treating a substrate, the apparatus comprising:

a liquid treating chamber liquid treating a substrate by supplying a liquid to the substrate;

a high-pressure chamber providing a treating space where a process of treating the substrate is performed by using a process fluid;

a fluid supplying source providing the process fluid to the high-pressure chamber;

a supply line connecting the high-pressure chamber and the fluid supplying source;

a first valve and a second valve sequentially installed along a direction from the fluid supplying source to the high-pressure chamber on the supply line;

a branch line branching from the supply line between the first valve and the second valve;

an exhaust line connected to the branch line;

a third valve connected to each of the branch line and the exhaust line;

another exhaust line exhausting the process fluid inside the high-pressure chamber;

a transfer robot transferring the substrate between the liquid treating chamber and the high-pressure chamber; and

a controller

configured to perform, before the transfer robot transfers the substrate to the high-pressure chamber for treating the substrate:

a first operating of opening the first valve, and closing the second valve and the third valve before the substrate is loaded into the high-pressure chamber to process the substrate; and

a second operating of closing the first valve and the second valve, and opening the third valve to exhaust a remaining process fluid inside the supply line.

2. The apparatus of claim 1 , wherein the controller is configured to perform the first operating and the second operating in multiple times.

3. The apparatus of claim 1 , wherein the controller is configured to perform the first operating and the second operating while the substrate is liquid treated in the liquid treating chamber.

4. The apparatus of claim 1 , wherein an internal pressure of the supply line decompresses to atmospheric pressure according to an opening of the third valve.

5. The apparatus of claim 1 , wherein the substrate is treated by using the process fluid in a supercritical phase in the high-pressure chamber.

6. The apparatus of claim 1 , wherein the process fluid is carbon dioxide.

7. The apparatus of claim 1 , wherein the fluid supplying source supplies the process fluid in a supercritical phase to the high-pressure chamber.

8. An apparatus for treating a substrate, the apparatus comprising:

a liquid treating chamber liquid treating a substrate by supplying a liquid to the substrate;

a high-pressure chamber providing a treating space where a process of treating the substrate is performed by using a process fluid;

a fluid supplying source providing the process fluid to the high-pressure chamber;

a supply line connecting the high-pressure chamber and the fluid supplying source;

a first valve and a second valve sequentially installed along a direction from the fluid supplying source to the high-pressure chamber on the supply line;

a branch line branching from the supply line between the first valve and the second valve;

an exhaust line connected to the branch line;

a third valve connected to each of the branch line and the exhaust line;

another exhaust line exhausting the process fluid inside the high-pressure chamber;

a transfer robot transferring the substrate between the liquid treating chamber and the high-pressure chamber; and

a controller,

configured to perform, before the transfer robot transfers the substrate to the high-pressure chamber for treating the substrate;

a first operating of opening the first valve and the second valve, and closing the third valve before the substrate is loaded into the high-pressure chamber to process the substrate; and

a second operating of closing the first valve and the second valve, and opening the third valve to exhaust a remaining process fluid inside the supply line.

9. The apparatus of claim 8 , wherein the controller is configured to perform the first operating and the second operating in multiple times.

10. The apparatus of claim 8 , wherein the controller is configured to perform the first operating and the second operating while the substrate is liquid treated in the liquid treating chamber.

11. The apparatus of claim 8 , wherein an internal pressure of the supply line decompresses to atmospheric pressure according to an opening of the third valve.

12. The apparatus of claim 8 , wherein the substrate is treated by using the process fluid in a supercritical phase in the high-pressure chamber.

13. The apparatus of claim 8 , wherein the process fluid is carbon dioxide.

14. The apparatus of claim 8 , wherein the fluid supplying source supplies the process fluid in a supercritical phase to the high-pressure chamber.

Assignments (1)
ASSIGNMENT OF ASSIGNOR'S INTEREST Recorded Dec 29, 2020
From: CHOI, YOUNGSEOP; LEE, YOUNG HUN; JUNG, JINWOO; PARK, MISO
To: SEMES CO., LTD.
Reel/Frame 054869/0591 →
Priority Claims (1)
KR 10-2019-0179294 · Dec 31, 2019 · national
Continuity (1)
Related Publication 20210202271A1 · Jul 1, 2021