Superconducting device having a plurality of thermal sink layers and a plurality of ground planes
An integrated circuit is provided that comprises a first thermal sink layer, a first ground plane associated with a first set of circuits that have a first operational temperature requirement, a first thermally conductive via that couples the first ground plane to the first thermal sink layer, a second thermal sink layer, a second ground plane associated with a second set of circuits that have a second operational temperature requirement that is higher than the first operational temperature requirement, and a second thermally conductive via that couples the second ground plane to the second thermal sink layer. The first thermal sink layer is cooled at a first temperature to maintain the first set of circuits at the first operational temperature requirement and the second thermal sink layer is cooled at a second temperature to maintain the second set of circuits at the second operational temperature requirement.
1. An integrated circuit comprising:
a plurality of thermal sink layers;
a substrate;
a first dielectric layer overlying the substrate;
a second dielectric layer overlying the first dielectric layer, the second dielectric layer comprising a first ground plane, a second ground plane, first set of circuits, and a second set of circuits, wherein the first set of circuits have a different operational temperature requirement than the second set of circuits; and
a plurality of conductive vias, wherein at least one conductive via of the plurality of conductive vias couples one of the first or second ground planes to one of the plurality of thermal sink layers, wherein each thermal sink layer is cooled at a different temperature to maintain the first and second set of circuits at different operational temperatures.
2. The circuit of claim 1 , wherein the first ground plane and the first set of circuits are adjacent and physically separated from the second ground plane and the second set of circuits.
3. The circuit of claim 1 , wherein a first conductive via of the plurality of conductive vias couples the first ground plane to a first thermal sink layer of the plurality of thermal sink layers, and a second conductive via of the plurality of conductive vias couples the second ground plane to a second thermal sink layer of the plurality of thermal sink layers.
4. The circuit of claim 3 , wherein the first and second set of circuits correspond to first and second set of superconducting circuits.
5. A monolithic microwave integrated circuit (MMIC) comprising:
a first thermal sink layer;
a second thermal sink layer;
a first dielectric layer overlying a substrate;
a second dielectric layer overlying the first dielectric layer, the second dielectric layer comprising a first electrically conducting ground plane and a first set of superconducting circuits that have a first operational temperature requirement, the second dielectric layer further comprising a second electrically conducting ground plane and a second set of superconducting circuits that have a different operational temperature requirement than the first electrically conducting ground plane and the first set of superconducting circuits;
a first thermally conductive via that couples the first electrically conducting ground plane to the first thermal sink layer; and
a second thermally conductive via that couples the second electrically conducting ground plane to the second thermal sink layer, wherein each of the first and second thermal sink layers are cooled at a different temperature to maintain the first and second set of superconducting circuits at different operational temperatures.
6. The circuit of claim 5 , wherein the first electrically conducting ground plane and the first set of superconducting circuits are adjacent and physically separated from the second electrically conducting ground plane and the second set of superconducting circuits.