Vehicle power module
A vehicle power module includes an upper substrate and a lower substrate spaced from each other in a vertical direction, a semiconductor chip connected to one of the upper substrate and the lower substrate, and a spacer formed of a metal material containing copper and connecting the semiconductor chip to the other of the upper substrate and the lower substrate or to connect the upper substrate to the lower substrate, the spacer including a plurality of penetration portions formed to penetrate an inside thereof.
1. A vehicle power module comprising:
an upper substrate and a lower substrate spaced from each other in a vertical direction;
a semiconductor chip connected to a first one of the upper substrate and the lower substrate;
a spacer connecting the semiconductor chip to a second one of the upper substrate and the lower substrate or connecting the upper substrate to the lower substrate,
wherein the spacer is formed of a metal material including a copper and includes a plurality of penetration portions formed to penetrate an inside thereof; and
an insulation portion configured to mold and insulate the upper substrate, the lower substrate, the semiconductor chip, and the spacer through an insulation material,
wherein the insulation portion is inserted into a part of the penetration portions when molding the upper substrate, the lower substrate, the semiconductor chip, and the spacer.
2. The vehicle power module of claim 1 , further including a bonding portion bonding the spacer to at least one of the semiconductor chip, the upper substrate, or the lower substrate through a bonding material.
3. The vehicle power module of claim 2 , wherein the bonding portion is inserted into penetration portions disposed at a position in contact with the spacer, among the plurality of penetration portions.
4. The vehicle power module of claim 2 , further including a conductive plate bonded to each of opposite end portions of the spacer, the conductive plate including an external surface thereof bonded to the bonding portion.
5. The vehicle power module of claim 1 , wherein the plurality of penetration portions formed in the spacer are spaced from each other with a predetermined distance.
6. The vehicle power module of claim 1 , wherein the penetration portions formed in the spacer are disposed on an external side of the spacer.
7. The vehicle power module of claim 1 , wherein the upper substrate and the lower substrate include:
a first metal portion connected to the semiconductor chip or the spacer,
an insulation substrate including the first metal portion coupled to one side surface thereof, the insulation substrate being insulated from outside, and
a second metal portion coupled to the other side of the insulation substrate.
8. The vehicle power module of claim 1 , wherein a contact area of the spacer in contact with the semiconductor chip is smaller than an area of the semiconductor chip.
9. The vehicle power module of claim 1 , wherein the insulation portion is formed of a material including a lower coefficient of thermal expansion than a coefficient of thermal expansion of the spacer, and thermal expansion force of the spacer is dispersed when the insulation portion is inserted into the penetration portions.