Chevron interconnect for very fine pitch probing
An apparatus an apparatus comprising: a substrate having a plane; and an array of at least one conductive probe having a base affixed to the substrate, the at least one conductive probe having a major axis extending from the plane of the substrate and terminating at a tip, wherein the one or more conductive probes comprise at least three points that are non-collinear.
1. An apparatus comprising:
a substrate comprising conductive features; and
a plurality of conductive probes projecting from a plane of the substrate, wherein:
a base of individual ones of the probes is coupled with corresponding ones of the conductive features;
individual ones of the probes comprise a first straight segment extending a first distance from the base to a first end in a first direction over the plane of the substrate and at a first zenith angle oblique to the plane of the substrate; and
the individual ones of the probes comprise a second straight segment comprising a second end in direct contact with the first end, the second straight segment extending from the second end a second distance in a second direction over the plane of the substrate and at a second zenith angle oblique to the plane of the substrate, wherein the second direction differs from the first direction by a non-zero azimuth angle.
2. The apparatus of claim 1 , wherein the substrate comprises a dielectric material and conductive features, and wherein the base of individual ones of the probes is coupled to a corresponding one of the conductive features.
3. The apparatus of claim 1 , wherein individual ones of the probes have a major axis from the base to a tip that extends no more than 500 microns in a direction substantially orthogonal to the plane of the substrate.
4. The apparatus of claim 3 , wherein the major axis extends from the base to the tip by 100 microns, or less.
5. The apparatus of claim 3 , wherein the plurality of probes have a pitch of no more than 100 microns in at least one dimension over the plane of the substrate.
6. The apparatus of claim 5 , wherein the pitch is 40 microns, or less.
7. The apparatus of claim 1 , wherein the second direction is substantially opposite the first direction, with the first and second segments substantially co-planar.
8. The apparatus of claim 1 , wherein the first and second distances are substantially equal with individual ones of the probes having a chevron shape.
9. The apparatus of claim 1 , wherein the first and second zenith angles are substantially equal.
10. The apparatus of claim 1 , wherein individual ones of the probes comprise a third straight segment in direct contact with the second straight segment, the third straight segment extending in a third direction over the plane of the substrate, wherein the third direction differs from the second direction by a non-zero azimuth angle.
11. The apparatus of claim 10 , wherein the third direction is rotated azimuthally toward the base.
12. The apparatus of claim 1 , wherein the probes comprise copper or tungsten.
13. A system comprising:
a probe station; and
a probe card electrically coupled to the probe station wherein, the probe card comprises a plurality of conductive probes projecting from a plane of a probe card substrate, and wherein individual ones of the probes comprise:
a first straight segment extending a first distance from a base to a first end in a first direction over the plane of the substrate and at a first zenith angle oblique to the plane of the substrate; and
a second straight segment comprising a second end in direct contact with the first end, the second straight segment extending from the second end a second distance in a second direction over the plane of the substrate and at a second zenith angle oblique to the plane of the substrate, wherein the second direction differs from the first direction by a non-zero azimuth angle.
14. The system of claim 13 , wherein:
the substrate comprises trace routing coupling the probe station to individual ones of the conductive probes;
the probes comprise copper or tungsten;
individual ones of the probes have a major axis from the base to a tip that extends no more than 500 microns in a direction substantially orthogonal to the plane of the substrate; and
the probes have a pitch of no more than 100 microns in at least one dimension over the plane of the substrate.
15. The system of claim 14 , wherein:
the major axis extends from the base to the tip by 100 microns, or less; and
the pitch is 40 microns, or less.
16. The system of claim 13 , wherein the second direction is substantially opposite the first direction, with the first and second segments substantially co-planar.
17. A method of electrically testing an integrated circuit (IC) device, the method comprising:
receiving a device under test (DUT);
contacting test points on the DUT with a plurality of probes; and
performing an electrical test of the DUT with a probe station coupled to the probes, wherein the plurality of probes project from a plane of a probe card substrate, and wherein individual ones of the probes comprise:
a first straight segment extending a first distance from a base to a first end in a first direction over the plane of the substrate and at a first zenith angle oblique to the plane of the substrate; and
a second straight segment comprising a second end in direct contact with the first end, the second straight segment extending from the second end a second distance in a second direction over the plane of the substrate and at a second zenith angle oblique to the plane of the substrate, wherein the second direction differs from the first direction by a non-zero azimuth angle.
18. The method of claim 17 , wherein:
individual ones of the probes have a major axis from the base to a tip that extends no more than 500 microns in a direction substantially orthogonal to the plane of the substrate; and
the probes have a pitch of no more than 100 microns in at least one dimension over the plane of the substrate.
19. The method of claim 18 , wherein the first and second distances are substantially equal with individual ones of the probes having a chevron shape.
20. The method of claim 19 , wherein the major axis extends from the base to the tip by 100 microns, or less, and the pitch is 40 microns, or less.