IP Library › Granted Patent US 12,033,715
Granted Patent B2
US 12,033,715 · App. 18/063,041 · Granted Jul 9, 2024

Memory circuit arrangement for accurate and secure read

Inventors: Vikas Rana (Noida, IN); Arpit Vijayvergia (Bhopal, IN)
Assignee: STMicroelectronics International N.V.
G11C7/06H03K19/20
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Quick Facts
Patent No.
US 12,033,715
App. No.
18/063,041
Granted
Jul 9, 2024
Kind
B2
Abstract

The present disclosure is directed to arranging user data memory cells and test memory cells in a configurable memory array that can perform both differential and single ended read operations during memory start-up and normal memory use, respectively. Different arrangements of the user data memory cells and the test memory cells in the memory array result in increased effectiveness of memory array, in terms of area optimization, memory read accuracy and encryption for data security.

Claims (37)

1. A device, comprising:

a configurable memory array that includes:

a plurality of rows of memory cells, the memory cells of at least one row including a plurality of user data memory cells, a plurality of test data memory cells, and a plurality of complementary test data memory cells, the plurality of complementary test data memory cells configured to store inverse data of the plurality of test data memory cells.

2. The device of claim 1 wherein the row includes at least a first word and a second word, the plurality of test data memory cells being in the first word and the plurality of complementary test data memory cells being in the second word.

3. The device of claim 2 wherein a first group of the plurality of user data memory cells is in the first word and a second group of the plurality of user data memory cells is in the second word.

4. The device of claim 3 wherein the first group of the plurality of user data memory cells is separated from the second group of the plurality of user data memory cells by the plurality of test data memory cells and the plurality of complementary test data memory cells.

5. The device of claim 1 wherein the plurality of test data memory cells and the plurality of complementary test data memory cells in the row are separated by the plurality of user data memory cells.

6. The device of claim 1 wherein the plurality of user data memory cells are configured to be read with a single ended read operation and the plurality of test data memory cells and the plurality of complementary test data memory cells are configured to be read with a differential read operation.

7. The device of claim 1 wherein each row of the plurality of rows includes a first word and a second word, the configurable memory array includes:

a column multiplexor coupled to the first word and the second word of each row; and

a sense amplifier coupled to the column multiplexor, the sense amplifier including:

a reference current memory cell array.

8. The device of claim 7 wherein the reference current memory cell array is configured to provide a reference current in the sense amplifier in a single ended read operation.

9. A device, comprising:

a first configurable row having a first plurality of memory cells including a first plurality of test data memory cells and a first plurality of complementary test data memory cells, the first plurality of complementary test data memory cells configured to store inverse data of the first plurality of test data memory cells; and

a second configurable row having a second plurality of memory cells including a second plurality of test data memory cells and a second plurality of complementary test data memory cells.

10. The device of claim 9 wherein the first configurable row includes at least a first word and a second word, the first plurality of test data memory cells being in the first word and the first plurality complementary test data memory cells being in the second word, the second plurality of complementary test data memory cells configured to store inverse data of the second plurality of test data memory cells.

11. The device of claim 10 wherein a first group of a first plurality of user data memory cells is in the first word and a second group of the first plurality of user data memory cells is in the second word.

12. The device of claim 11 wherein the first configurable row includes a first plurality of complementary test data memory cells, the first group of the first plurality of user data memory cells is separated from the second group of the first plurality of user data memory cells by the first plurality of test data memory cells and the first plurality of complementary test data memory cells.

13. The device of claim 12 wherein the first plurality of test data memory cells and the first plurality of complementary test data memory cells in the row are separated by the first plurality of user data memory cells.

14. The device of claim 9 wherein the first configurable row includes a first plurality of complementary test data memory cells, a first plurality of user data memory cells are configured to be read with a single ended read operation and the first plurality of test data memory cells and the first plurality complementary test data memory cells are configured to be read with a differential read operation.

15. The device of claim 1 wherein a first configurable row includes a first word and a second word and includes:

a column multiplexor coupled to the first word and the second word of each row; and

a sense amplifier coupled to the column multiplexor, the sense amplifier including:

a reference current memory cell array.

16. The device of claim 15 wherein the reference current memory cell array is configured to provide a reference current in the sense amplifier in a single ended read operation.

17. A device, comprising:

a configurable memory array that includes:

at least one row including:

a plurality of user data memory cells;

a plurality of test data memory cells; and

a plurality of complementary test data memory cells, the plurality of complementary test data memory cells configured to store inverse data of the plurality of test data memory cells.

18. The device of claim 17 wherein the row includes at least a first word and a second word, the plurality of test data memory cells being in the first word and the plurality complementary test data memory cells being in the second word.

19. The device of claim 18 wherein a first group of the plurality of user data memory cells is in the first word and a second group of the plurality of user data memory cells is in the second word.

20. The device of claim 19 wherein the first group of the plurality of user data memory cells is separated from the second group of the plurality of user data memory cells by the plurality of test data memory cells and the plurality of complementary test data memory cells.

21. The device of claim 18 wherein the plurality of test data memory cells and the plurality of complementary test data memory cells in the row are separated by the plurality of user data memory cells.

22. The device of claim 18 wherein the plurality of user data memory cells are configured to be read with a single ended read operation and the plurality of test data memory cells and the plurality complementary test data memory cells are configured to be read with a differential read operation.

Continuity (3)
Continuation 17321344 · May 14, 2021
Provisional Application 63031420 · May 28, 2020
Related Publication 20230107851A1 · Apr 6, 2023
Cited By (1)
US 12,688,880