Magnetoresistance effect element and magnetic memory
A magnetoresistance effect element includes: a laminate in which a first ferromagnetic layer, a non-magnetic layer, and a second ferromagnetic layer are laminated in order in a first direction; a magnetic body that is present on the second ferromagnetic layer or above the second ferromagnetic layer of the laminate; and a wiring that is in contact with a first side surface of the magnetic body and extends in a second direction crossing the first direction. The thickness of the second ferromagnetic layer in the first direction is thinner than the minimum length of the second ferromagnetic layer in a plane orthogonal to the first direction. The thickness of the magnetic body in the first direction is thicker than the minimum length of the magnetic body in a plane orthogonal to the first direction.
1. A magnetoresistance effect element comprising:
a laminate in which a first ferromagnetic layer, a non-magnetic layer, and a second ferromagnetic layer are laminated in order in a first direction;
a magnetic body that is present on the second ferromagnetic layer or above the second ferromagnetic layer of the laminate; and
a wiring that is in contact with a first side surface of the magnetic body and extends in a second direction crossing the first direction,
wherein a thickness of the second ferromagnetic layer in the first direction is thinner than a minimum length of the second ferromagnetic layer in a plane orthogonal to the first direction,
a thickness of the magnetic body in the first direction is thicker than a minimum length of the magnetic body in a plane orthogonal to the first direction, and
a direction of easy magnetization axis of the magnetic body and the second ferromagnetic layer is the first direction.
2. The magnetoresistance effect element to claim 1 ,
wherein the wiring is further in contact with an upper surface of the magnetic body.
3. The magnetoresistance effect element according to claim 1 ,
wherein the wiring is further in contact with a first side surface of the second ferromagnetic layer.
4. The magnetoresistance effect element according to claim 1 ,
wherein each of the second ferromagnetic layer and the magnetic body is made of a material or a composition different from each other.
5. The magnetoresistance effect element according to claim 1 ,
wherein the magnetic body includes two or more elements selected from the group consisting of Co, Tb, Fe, and Gd.
6. The magnetoresistance effect element according to claim 1 ,
wherein a lower surface of the magnetic body is larger than an upper surface of the second ferromagnetic layer, and
a step is formed at an interface between the first side surface of the magnetic body and the first side surface of the second ferromagnetic layer.
7. The magnetoresistance effect element according to claim 1 , further comprising:
an intermediate layer between the second ferromagnetic layer and the magnetic body.
8. The magnetoresistance effect element according to claim 1 , further comprising:
a second wiring and an insulating layer which are present between the magnetic body and the second ferromagnetic layer,
wherein the second wiring is in contact with the second ferromagnetic layer, and
the insulating layer is interposed between the second wiring and the magnetic body.
9. The magnetoresistance effect element according to claim 1 , further comprising:
an oxide layer that is in contact with an upper surface of the magnetic body.
10. A magnetic memory comprising:
a plurality of the magnetoresistance effect elements according to claim 1 .