Memory system with adaptive refresh
A memory system with adaptive refresh commands is disclosed. In one aspect, a memory system or device that has multiple banks within a channel may receive a per bank command that indicates a first bank to be refreshed and provides additional information about a second bank to be refreshed. In a further exemplary aspect, a quad bank refresh command may be sent that indicates a first bank to be refreshed and provides additional information about second through fourth banks to be refreshed. In a further exemplary aspect, an octa bank refresh command may be sent that indicates a first bank to be refreshed and provides additional information about second through eighth banks to be refreshed. The three new refresh commands allow adjacent or spaced banks to be refreshed.
1. A memory device comprising:
a memory block; and
a memory bus interface configured to receive a refresh command from a remote source over a memory bus, wherein the refresh command comprises:
a first address within the memory block; and
additional information that indicates to the memory device a second address within the memory block, wherein the memory device is configured to refresh two memory banks in response to the refresh command, wherein the first address associates with a first of the two memory banks and the second address associates with a second of the two memory banks, and wherein the second of the two memory banks is less than seven banks away from the first of the two memory banks.
2. The memory device of claim 1 , wherein the memory device complies with a low power double data rate (LPDDR) standard.
3. The memory device of claim 1 , wherein the memory block comprises two pseudo-channels.
4. The memory device of claim 3 , wherein each of the two pseudo channels comprises eight banks.
5. The memory device of claim 4 , wherein the additional information indicates the second of the two memory banks adjacent to the first of the two memory banks.
6. The memory device of claim 1 , wherein the additional information comprises an explicit indication of the second address.
7. The memory device of claim 1 , wherein the additional information indicates a number of skipped banks between the first address and the second address.
8. The memory device of claim 1 , wherein the additional information comprises a number of banks between addresses.
9. The memory device of claim 1 , wherein the memory block comprises a channel.
10. The memory device of claim 9 , wherein the channel comprises sixteen banks.
11. The memory device of claim 10 , wherein the additional information indicates the second of the two memory banks adjacent to the first of the two memory banks.
12. A memory controller comprising:
a bus interface configured to:
couple to a memory bus; and
send a refresh command to a memory device through the memory bus, wherein the refresh command comprises:
a first address within a memory block within the memory device; and
additional information that indicates to the memory device a second address within the memory block, wherein the memory device is configured to refresh two memory banks in response to the refresh command, wherein the first address associates with a first of the two memory banks and the second address associates with a second of the two memory banks, and wherein the second of the two memory banks is less than seven banks away from the first of the two memory banks.
13. The memory controller of claim 12 , wherein the first address is within one of two pseudo-channels within the memory device.
14. The memory controller of claim 12 , wherein the first address is for one of sixteen banks.
15. The memory controller of claim 14 , wherein the second of the two memory banks adjacent to the first of the two memory banks.
16. The memory controller of claim 12 , wherein the additional information comprises an explicit indication of the second address.
17. A memory device comprising:
a memory block; and
a memory bus interface configured to receive a quad refresh command from a remote source over a memory bus, wherein the quad refresh command comprises:
a first address within the memory block; and
additional information that indicates to the memory device second through fourth addresses within the memory block, wherein the memory device is configured to refresh four memory banks in response to the refresh command, wherein the first address associates with a first of the four memory banks, the second address associates with a second of the four memory banks, the third address associates with a third of the four memory banks, and the fourth address associates with a fourth of the four memory banks.