Semiconductor-manufacturing apparatus member and plug
A semiconductor-manufacturing apparatus member includes a ceramic plate having an upper surface serving as a wafer placement surface, a plug disposed in an undersurface of the ceramic plate and including a dense body and a gas flow channel that extends through the body in a thickness direction of the body while winding, a gas outlet port that extends through the ceramic plate in a thickness direction of the ceramic plate to be connected to an upper portion of the gas flow channel, and a metal cooling plate joined to the undersurface of the ceramic plate, and including a gas supply channel through which gas is supplied from a lower portion of the gas flow channel. In the plug, at least a portion in length of the gas flow channel is formed from a porous member.
1. A plug, comprising:
a dense body; and
a gas flow channel that extends through the body in a thickness direction of the body having multiple windings,
wherein at least one winding of the multiple windings of the gas flow channel is formed from a porous member with insulating properties and breathability,
wherein the plug includes a first taper portion with a diameter gradually decreasing toward an under surface of the plug, and
wherein the plug includes a second taper portion with a diameter gradually decreasing toward an upper surface of the plug.
2. The plug according to claim 1 , wherein the dense body has a pore rate of less than 1%.
3. The plug according to claim 1 , wherein a full length of the gas flow channel is greater than or equal to 5 times and less than or equal to 15 times of a thickness of the dense body.
4. A semiconductor-manufacturing apparatus member comprising:
a ceramic plate having an upper surface serving as a wafer placement surface, and including a built-in electrode;
a plug disposed in a lower surface of the ceramic plate, and including a dense body and a gas flow channel that extends through the body in a thickness direction of the body having multiple windings;
a gas outlet port that extends through the ceramic plate in a thickness direction of the ceramic plate to be connected to an upper portion of the gas flow channel; and
a metal cooling plate joined to the lower surface of the ceramic plate, and including a gas supply channel through which gas is supplied from a lower portion of the gas flow channel,
wherein at least one winding of the multiple windings of the gas flow channel is formed from a porous member with insulating properties and breathability,
wherein the plug includes a first taper portion with a diameter gradually decreasing toward the lower surface of the ceramic plate,
wherein the plug includes a second taper portion with a diameter gradually decreasing toward the upper surface of the ceramic plate, and
wherein the electrode has a through-hole that is formed in a plane inside the ceramic plate crossing the second taper portion to allow the plug to extend therethrough.
5. The semiconductor-manufacturing apparatus member according to claim 4 , wherein the porous member that forms the at least one winding of the multiple windings of the gas flow channel has a pore rate of greater than or equal to 10% and less than or equal to 50%.
6. The semiconductor-manufacturing apparatus member according to claim 4 , wherein all of the windings of the multiple windings of the gas flow channel is formed from the porous member.
7. The semiconductor-manufacturing apparatus member according to claim 4 , wherein the gas flow channel is helical.
8. The semiconductor-manufacturing apparatus member according to claim 1 , wherein the plug has a stepped portion on a side surface that narrows a diameter of a lower side.
9. The semiconductor-manufacturing apparatus member according to claim 4 , wherein the dense body has a pore rate of less than 1%.
10. The semiconductor-manufacturing apparatus member according to claim 4 , wherein a full length of the gas flow channel is greater than or equal to 5 times and less than or equal to 15 times of a thickness of the dense body.
11. The semiconductor-manufacturing apparatus member according to claim 4 , wherein the second taper portion includes a bevel formed at a plug-receiving hole formed in the ceramic plate.