Perimeter trench formation and delineation etch delayering
Apparatus and methods are disclosed for sample preparation, suitable for online or offline use with multilayer samples. Ion beam technology is leveraged to provide rapid, accurate delayering with etch stops at a succession of target layers. In one aspect, a trench is milled around a region of interest (ROI), and a conductive coating is developed on an inner sidewall. Thereby, reliable conducting paths are formed between intermediate layers within the ROI and a base layer, and stray current paths extending outside the ROI are eliminated, providing better quality etch progress monitoring, during subsequent etching, from body or scattered currents. Ion beam assisted gas etching provides rapid delayering with etch stops at target polysilicon layers. Uniform etching at deep layers can be achieved. Variations and results are disclosed.
1. One or more computer-readable media storing computer-executable instructions which, when executed by one or more processors, cause the one or more processors to control:
a first act of electrically isolating a region of interest (ROI) of a sample from a surrounding area of the sample, by milling a trench around the ROI to at least a depth of a base layer of the sample, the etched trench exposing a lateral surface of the ROI; and
a second act of electrically coupling two or more conductive layers of the sample by causing electrically conductive material to be coated over the lateral surface exposed by the trench.
2. The one or more computer-readable media of claim 1 , wherein the coated electrically conductive material couples the base layer to one or more conductive layers above the base layer.
3. The one or more computer-readable media of claim 1 , wherein the sample, upon which the first act and the second act are performed, comprises a stacked electronic structure.
4. The one or more computer-readable media of claim 1 , wherein the sample, upon which the first act and the second act are performed, comprises a vertical flash memory structure.
5. The one or more computer-readable media of claim 1 , wherein the sample, upon which the first act and the second act are performed, comprises a 3D-NAND stack.
6. The one or more computer-readable media of claim 1 , wherein the lateral surface exposes a plurality of layers of the sample, at least one of which is a polysilicon layer.
7. The one or more computer-readable media of claim 1 , wherein the first act comprises ion beam milling.
8. The one or more computer-readable media of claim 7 , wherein the electrically conductive material is coated as a byproduct of the ion beam milling.
9. The one or more computer-readable media of claim 1 , wherein the second act comprises ion assisted coating or ion assisted chemical vapor deposition.
10. One or more computer-readable media storing computer-executable instructions which, when executed by one or more processors, actuate the one or more processors to:
cause an etcher to etch a trench around a region of interest (ROI) of a sample, to electrically isolate the ROI from a surrounding area of the sample, wherein the etched trench exposes a lateral surface of the ROI; and
cause a coater to coat electrically conductive material over the lateral surface of the ROI exposed by the trench etching, to electrically couple two or more electrically conductive layers of the sample.
11. The one or more computer-readable media of claim 10 , wherein execution of the computer-executable instructions further actuate the one or more processors to:
cause the sample within the ROI to be delayered; and
monitor the delayering using a measured body current from the electrically coupled two or more electrically conductive layers.
12. The one or more computer-readable media of claim 11 , wherein the execution of the computer-executable instructions further actuate the one or more processors to:
responsive to the monitoring, detect an etch stop; and
pause the delayering at the detected etch stop.
13. The one or more computer-readable media of claim 11 , wherein the delayering comprises:
etching the sample with a combination of gas etch and ion beam etch, wherein the etching is temporally arranged as a plurality of etching phases; and
purging gas proximate to the sample, with the ion beam etch disabled, in purging phases situated between successive ones of the etching phases.
14. The one or more computer-readable media of claim 10 , wherein the etcher comprises an ion milling machine.
15. The one or more computer-readable media of claim 14 , wherein the ion milling machine comprises a Ga+ or Xe+ ion beam source.
16. The one or more computer-readable media of claim 10 , wherein the etching of the trench is performed by milling, and the electrically coupling is performed as a byproduct of the milling of the trench.
17. The one or more computer-readable media of claim 10 , wherein the etched trench has a width in a range of 0.2-5 μm.
18. The one or more computer-readable media of claim 10 , wherein the coater is an ion beam assisted coater.
19. The one or more computer-readable media of claim 10 , wherein the etching of the trench is performed to at least a depth of an electrically conductive base layer of the sample, and the two or more electrically conductive layers include the base layer and an electrically conductive layer above the base layer.
20. The one or more computer-readable media of claim 19 , wherein the etched trench has a transverse inner dimension in a range 5-500 μm, or a depth in a range of 1-10 μm.