Integrated radio frequency (RF) front-end module (FEM)
Embodiments may relate to a radio frequency (RF) front-end module (FEM) that includes an acoustic wave resonator (AWR) die. The RF FEM may further include an active die coupled with the package substrate of the RF FEM. When the active die is coupled with the package substrate, the AWR die may be between the active die and the package substrate. Other embodiments may be described or claimed.
1. A radio frequency (RF) front-end module (FEM), comprising:
a package substrate;
a lid;
an acoustic wave resonator (AWR) die; and
an active die coupled with the package substrate, wherein the AWR die is between the active die and the lid, the lid is between the AWR die and the package substrate, the lid is separated from the package substrate by a first space, the AWR die is separated from the lid by a second space, and the active die is separated from the AWR die by a third space.
2. The RF FEM of claim 1 , wherein the AWR die includes a plurality of resonators.
3. The RF FEM of claim 1 , wherein the AWR die is a first AWR die, and wherein the RF FEM includes a second AWR die between the active die and the package substrate.
4. The RF FEM of claim 3 , wherein the first AWR die is related to a first frequency band and the second AWR die is related to a second frequency band that is different than the first frequency band.
5. The RF FEM of claim 1 , wherein the active die includes circuitry related to one or more of RF control logic, a switch, a power-management integrated circuit (PMIC), a power amplifier, a mixer, or a phase shifter.
6. The RF FEM of claim 1 , wherein the RF FEM has a z-height, as measured in a direction perpendicular to a face of the package substrate to which the active die is coupled, of less than 800 micrometers.
7. The RF FEM of claim 1 , further comprising an insulator separating the active die and the AWR die.
8. The RF FEM of claim 7 , further comprising electrical interconnects extending through the insulator and connected to the active die and the AWR die.
9. The RF FEM of claim 1 , wherein:
the active die has a first face and a second face opposite the first face,
the first face of the active die is closer to the AWR die than the second face of the active die,
and the first face of the active die is physically separated from the AWR die.
10. The RF FEM of claim 1 , wherein:
the AWR die includes at least one resonator,
the AWR die has a first face and a second face opposite the first face,
the second face of the AWR die is closer to the active die than the first face of the AWR die and is physically separated from the active die by an insulator,
and at least one resonator is:
either at the first face of the AWR die,
or at the second face of the AWR die and separated from the active die by the insulator.
11. The RF FEM of claim 1 , further comprising:
first interconnects in the first space, wherein the first interconnects are coupled with the lid and the package substrate; and
second interconnects in the second space, wherein the second interconnects are coupled with the lid and the AWR die.
12. The RF FEM of claim 11 , further comprising:
third interconnects in a space between the lid and the active die, wherein the third interconnects are coupled with the lid and the active die.
13. The RF FEM of claim 12 , further comprising:
fourth interconnects in a space between the package substrate and the active die, wherein the fourth interconnects are coupled with the package substrate and the active die.
14. The RF FEM of claim 1 , wherein the AWR die is coupled with the package substrate.
15. The RF FEM of claim 1 , wherein the AWR die is physically and communicatively coupled with the active die.
16. An integrated circuit (IC) package, comprising:
a first die comprising one or more resonators;
a second die comprising circuitry related to RF control logic, a switch, a power-management integrated circuit (PMIC), a power amplifier, a mixer, or a phase shifter;
a seal between the first die and the second die, wherein the one or more resonators are in a cavity between the first die and the second die and are physically separated from the second die, and wherein the cavity is a hermetically sealed cavity; and
a further component, wherein the second die is coupled with the further component, and wherein the first die is between the second die and the further component.
17. The IC package of claim 16 , further comprising an interposer between the first die and the further component, wherein the one or more resonators are in a hermetically sealed cavity between the first die and the interposer.
18. The IC package of claim 17 , further comprising:
first interconnects to electrically couple the first die and the interposer; and
second interconnects to electrically couple the interposer and the further component.
19. The IC package of claim 16 , further comprising:
first interconnects to electrically couple the first die and the second die; and
second interconnects to electrically couple the second die and the further component.
20. The IC package of claim 16 , wherein the one or more resonators include one or more acoustic wave resonators.
21. The IC package of claim 16 , wherein the further component is one of a package substrate, a printed circuit board, an interposer, or a motherboard.
22. The IC package of claim 16 , wherein the first die is physically separated from all surfaces of the second die.