Quantum dot device and quantum dots
Quantum dots and electroluminescent devices including the same, wherein the quantum dots include a core including a first semiconductor nanocrystal including a zinc chalcogenide; and a shell disposed on the core, the shell including zinc, sulfur, and selenium, wherein the quantum dots have an average particle size of greater than 10 nm, wherein the quantum dots do not include cadmium, and wherein a photoluminescent peak of the quantum dots is present in a wavelength range of greater than or equal to about 430 nm and less than or equal to about 470 nm.
1. Quantum dots comprising
a first semiconductor nanocrystal comprising a zinc chalcogenide,
wherein the quantum dots are configured to emit blue light having a maximum luminescent peak wavelength in a range of greater than or equal to about 440 nanometers and a quantum yield of the quantum dots is greater than or equal to 60%,
wherein the quantum dots have an average value of solidity of greater than or equal to about 0.85, and
wherein the zinc chalcogenide comprises zinc, selenium, and tellurium.
2. The quantum dots of claim 1 , wherein the maximum luminescent peak wavelength is in a range of greater than or equal to about 445 nanometers and less than or equal to about 480 nanometers.
3. The quantum dots of claim 1 , wherein the maximum luminescent peak wavelength is in a range of greater than or equal to about 450 nanometers and less than or equal to about 475 nanometers.
4. The quantum dots of claim 1 , wherein the maximum luminescent peak wavelength is in a range of from about 460 nanometers to about 470 nanometers.
5. The quantum dots of claim 1 , wherein the quantum yield of the quantum dots is greater than or equal to 70%.
6. The quantum dots of claim 1 , wherein the quantum yield of the quantum dots is greater than or equal to 80%.
7. The quantum dots of claim 1 , wherein the quantum dots have a core-shell structure having a core and a shell disposed on the core, and
wherein the core comprises the first semiconductor nanocrystal and the shell comprises a second semiconductor nanocrystal and the second semiconductor nanocrystal comprises zinc, sulfur, and selenium.
8. The quantum dots of claim 7 , wherein a thickness of the shell is greater than or equal to about 4 nanometers and less than or equal to about 50 nanometers.
9. The quantum dots of claim 7 , wherein the semiconductor nanocrystal shell comprises
a first layer disposed on the core and
an outer layer disposed on the first layer, and
wherein the first layer comprises a fourth semiconductor nanocrystal comprising zinc and selenium, and
wherein the outer layer comprises a third semiconductor nanocrystal comprising zinc and sulfur.
10. The quantum dots of claim 1 , wherein the quantum dots have an average value of solidity of greater than or equal to about 0.89.
11. The quantum dots of claim 1 , wherein the quantum dots have an average value of solidity of greater than or equal to about 0.90.
12. An electroluminescent device, comprising
a first electrode and a second electrode,
an emission layer disposed between the first electrode and the second electrode, the emission layer comprising quantum dots, and
wherein each of the quantum dots comprises a semiconductor nanocrystal comprising zinc, sulfur, and selenium,
wherein the quantum dots do not comprise cadmium,
wherein a maximum luminescent peak wavelength of the electroluminescent device is greater than or equal to 445 nanometers and less than or equal to about 470 nanometers,
wherein the electroluminescent device is configured to exhibit a maximum external quantum efficiency of greater than or equal to about 6.3% or a maximum brightness of greater than or equal to about 1950 cd/m 2 .
13. The electroluminescent device of claim 12 , wherein the semiconductor nanocrystal comprises a zinc selenide, a zinc sulfide, a ZnSe 1-x Te x , or a combination thereof, and x is greater than 0 and less than or equal to about 0.05, and
optionally wherein the quantum dots do not comprise lead, mercury, or a combination thereof.
14. The electroluminescent device of claim 12 , wherein the maximum luminescent peak wavelength of the electroluminescent device is greater than 452 nanometers and less than or equal to about 465 nanometers.
15. The electroluminescent device of claim 12 , wherein the maximum luminescent peak wavelength of the electroluminescent device is from about 460 nanometers to about 465 nanometers.
16. The electroluminescent device of claim 12 , wherein the maximum luminescent peak wavelength of the electroluminescent device is from about 465 nanometers to about 470 nanometers.
17. The electroluminescent device of claim 12 , wherein a maximum external quantum efficiency of the electroluminescent device is greater than or equal to about 4.7% and a maximum brightness of the electroluminescent device is greater than or equal to about 1950 cd/m 2 .
18. The electroluminescent device of claim 12 , wherein a maximum external quantum efficiency of the electroluminescent device is greater than or equal to about 6.3% and wherein a maximum brightness of the electroluminescent device is greater than or equal to about 1950 cd/m 2 .
19. The electroluminescent device of claim 12 , wherein a maximum external quantum efficiency of the electroluminescent device is greater than or equal to 6.3% and a maximum brightness of the electroluminescent device is greater than or equal to about 2780 cd/m 2 .
20. The electroluminescent device of claim 12 , wherein an average size of the quantum dots is greater than or equal to about 12 nanometers and the quantum dots have an average value of solidity of greater than or equal to about 0.89.
21. A display device comprising the electroluminescent device of claim 12 .