Wordline leakage test management
A processing device in a memory sub-system determines whether a media endurance metric associated with a memory block of a memory device satisfies one or more conditions. In response to the one or more conditions being satisfied, a temperature of the memory block is compared to a threshold temperature range. In response to determining the temperature of the memory block is within the threshold temperature range, the processing device causes execution of a wordline leakage test of a wordline group of a set of wordline groups of the memory block. A result of the wordline leakage test of the target wordline group is determined and an action is executed based on the result of the wordline leakage test.
1. A system comprising:
a memory device; and
a processing device, operatively coupled with the memory device, to perform operations comprising:
determining that a program/erase cycle (PEC) count associated with a memory block of the memory device satisfies a first condition, wherein the first condition is satisfied when the PEC count is greater than or equal to a threshold PEC level;
in response to the first condition being satisfied, determining that a modulus value associated with the PEC count satisfies a second condition, wherein the second condition is satisfied when a modulus value associated with the PEC count is equal to 0;
in response to the first condition and the second condition being satisfied, comparing a temperature of the memory block to a threshold temperature range;
in response to determining the temperature of the memory block is within the threshold temperature range, causing execution of a wordline leakage test of a wordline group of a set of wordline groups of the memory block;
determining a result of the wordline leakage test of the wordline group; and
executing an action based on the result of the wordline leakage test.
2. The system of claim 1 , wherein the result comprises a failing result associated with the wordline leakage test.
3. The system of claim 2 , wherein the action comprises retiring the memory block.
4. The system of claim 1 , wherein the result comprises a passing result associated with the wordline leakage test.
5. The system of claim 4 , wherein the action comprises causing execution of the wordline leakage test of another wordline group of the set of wordline groups.
6. The system of claim 4 , wherein the action comprises:
determining a passing result of the wordline leakage test for each remaining wordline group of the set of wordline groups of the memory block; and
in response to determining the passing result, releasing the memory block to a garbage collection pool.
7. A method comprising:
determining that a program/erase cycle (PEC) count associated with a memory block of a memory device satisfies a first condition, wherein the first condition is satisfied when the PEC count is greater than or equal to a threshold PEC level;
in response to the first condition being satisfied, determining that a modulus value associated with the PEC count satisfies a second condition, wherein the second condition is satisfied when a modulus value associated with the PEC count is equal to 0;
in response to the first condition and the second condition being satisfied, comparing a temperature of the memory block to a threshold temperature range;
in response to determining the temperature of the memory block is within the threshold temperature range, causing, by a processing device, execution of a wordline leakage test of a wordline group of a set of wordline groups of the memory block;
determining a result of the wordline leakage test of the wordline group; and
executing an action based on the result of the wordline leakage test.
8. The method of claim 7 , wherein the result comprises a failing result associated with the wordline leakage test; and wherein the action comprises retiring the memory block.
9. The method of claim 7 , wherein the result comprises a passing result associated with the wordline leakage test; and wherein the action comprises causing execution of the wordline leakage test of another wordline group of the set of wordline groups.
10. The method of claim 9 , wherein the result comprises a passing result associated with the wordline leakage test; and wherein the action comprises:
determining a passing result of the wordline leakage test for each remaining wordline group of the set of wordline groups of the memory block; and
in response to determining the passing result, releasing the memory block to a garbage collection pool.
11. A non-transitory computer-readable storage medium comprising instructions that, when executed by a processing device, cause the processing device to perform operations comprising:
determining that a program/erase cycle (PEC) count associated with a memory block of a memory device satisfies a first condition, wherein the first condition is satisfied when the PEC count is greater than or equal to a threshold PEC level;
in response to the first condition being satisfied, determining that a modulus value associated with the PEC count satisfies a second condition, wherein the second condition is satisfied when a modulus value associated with the PEC count is equal to 0;
in response to the first condition and the second condition being satisfied, comparing a temperature of the memory block to a threshold temperature range;
in response to determining the temperature of the memory block is within the threshold temperature range, causing, by a processing device, execution of a wordline leakage test of a wordline group of a set of wordline groups of the memory block;
determining a result of the wordline leakage test of the wordline group; and
executing an action based on the result of the wordline leakage test.
12. The non-transitory computer-readable storage medium of claim 11 , wherein the result comprises a failing result associated with the wordline leakage test; and wherein the action comprises retiring the memory block.
13. The non-transitory computer-readable storage medium of claim 11 , wherein the result comprises a passing result associated with the wordline leakage test; and wherein the action comprises causing execution of the wordline leakage test of another wordline group of the set of wordline groups.
14. The non-transitory computer-readable storage medium of claim 11 , wherein the result comprises a passing result associated with the wordline leakage test; and wherein the action comprises:
determining a passing result of the wordline leakage test for each remaining wordline group of the set of wordline groups of the memory block; and
in response to determining the passing result, releasing the memory block to a garbage collection pool.