Fabrication of gate-all-around integrated circuit structures having molybdenum nitride metal gates and gate dielectrics with a dipole layer
Gate-all-around integrated circuit structures having molybdenum nitride metal gates and gate dielectrics with a dipole layer are described. For example, an integrated circuit structure includes a first vertical arrangement of horizontal nanowires, and a second vertical arrangement of horizontal nanowires. A first gate stack is over the first vertical arrangement of horizontal nanowires, the first gate stack having a P-type conductive layer on a first gate dielectric. The P-type conductive layer includes molybdenum and nitrogen. A second gate stack is over the second vertical arrangement of horizontal nanowires, the second gate stack having an N-type conductive layer on a second gate dielectric.
1. An integrated circuit structure, comprising:
a first vertical arrangement of horizontal nanowires;
a second vertical arrangement of horizontal nanowires;
a first gate stack over the first vertical arrangement of horizontal nanowires, the first gate stack having a P-type conductive layer on a first gate dielectric, the P-type conductive layer comprising molybdenum and nitrogen; and
a second gate stack over the second vertical arrangement of horizontal nanowires, the second gate stack having an N-type conductive layer on a second gate dielectrics wherein the P-type conductive layer is further on the N-type conductive layer.
2. The integrated circuit structure of claim 1 , further comprising:
a conductive fill on the P-type conductive layer, the conductive fill comprising tungsten.
3. The integrated circuit structure of claim 2 , wherein the conductive fill has a direct interface with the P-type conductive layer.
4. The integrated circuit structure of claim 2 , wherein the conductive fill has an oxide interface with the P-type conductive layer.
5. The integrated circuit structure of claim 1 , wherein the P-type conductive layer comprises an atomic concentration of molybdenum and nitrogen of greater than 80%, with a ratio of molybdenum to nitrogen in a range of 6:1 to 1:1.
6. The integrated circuit structure of claim 5 , wherein the P-type conductive layer comprises oxygen with an atomic concentration in the range of 0-15%.
7. The integrated circuit structure of claim 5 , wherein the P-type conductive layer comprises carbon with an atomic concentration in the range of 0.1-10%.
8. An integrated circuit structure, comprising:
a first vertical arrangement of horizontal nanowires;
a second vertical arrangement of horizontal nanowires;
a first gate stack over the first vertical arrangement of horizontal nanowires, the first gate stack having a P-type conductive layer on a first gate dielectric comprising a high-k dielectric layer on a first dipole material layer, the P-type conductive layer comprising molybdenum and nitrogen; and
a second gate stack over the second vertical arrangement of horizontal nanowires, the second gate stack having an N-type conductive layer on a second gate dielectric comprising the high-k dielectric layer on a second dipole material layer, wherein the P-type conductive layer has a first portion surrounding the nanowires of the first vertical arrangement of horizontal nanowires and a second portion extending laterally beside and spaced apart from the first portion, wherein the second portion of the P-type conductive layer is between the first vertical arrangement of horizontal nanowires and the second vertical arrangement of horizontal nanowires, and wherein the N-type conductive layer has a first portion surrounding the nanowires of the second vertical arrangement of horizontal nanowires and a second portion adjacent to and in contact with the second portion of the P-type conductive layer.
9. The integrated circuit structure of claim 8 , wherein the high-k dielectric layer is an HfO 2 layer.
10. The integrated circuit structure of claim 8 , wherein the first dipole layer comprises a material selected from the group consisting of Al 2 O 3 , TiO 2 , ZrO 2 and HfO 2 , and the second dipole layer comprises a material selected from the group consisting of La 2 O 3 , Y 2 O 3 , MgO, SrO and Lu 2 O 3 .
11. The integrated circuit structure of claim 8 , wherein one of the first or the second dipole layer has a thickness in the range of 1-3 Angstroms.
12. The integrated circuit structure of claim 8 , wherein one of the first or the second dipole layer has a thickness in the range of 4-6 Angstroms.
13. The integrated circuit structure of claim 8 , further comprising:
a first pair of epitaxial source or drain structures at first and second ends of the first vertical arrangement of horizontal nanowires; and
a second pair of epitaxial source or drain structures at first and second ends of the second vertical arrangement of horizontal nanowires.
14. A computing device, comprising:
a board; and
a component coupled to the board, the component including an integrated circuit structure, comprising:
a first vertical arrangement of horizontal nanowires;
a second vertical arrangement of horizontal nanowires;
a first gate stack over the first vertical arrangement of horizontal nanowires, the first gate stack having a P-type conductive layer on a first gate dielectric, the P-type conductive layer comprising molybdenum and nitrogen; and
a second gate stack over the second vertical arrangement of horizontal nanowires, the second gate stack having an N-type conductive layer on a second gate dielectric, wherein the P-type conductive layer is further on the N-type conductive layer.
15. The computing device of claim 14 , further comprising:
a memory coupled to the board.
16. The computing device of claim 14 , further comprising:
a communication chip coupled to the board.
17. The computing device of claim 14 , wherein the component is a packaged integrated circuit die.
18. The computing device of claim 14 , wherein the component is selected from the group consisting of a processor, a communications chip, and a digital signal processor.
19. An integrated circuit structure, comprising:
a first vertical arrangement of horizontal nanowires;
a second vertical arrangement of horizontal nanowires;
a first gate stack over the first vertical arrangement of horizontal nanowires, the first gate stack having a P-type conductive layer on a first gate dielectric, the P-type conductive layer comprising molybdenum and nitrogen;
a second gate stack over the second vertical arrangement of horizontal nanowires, the second gate stack having an N-type conductive layer on a second gate dielectric; and
a conductive fill on the P-type conductive layer, the conductive fill comprising tungsten, wherein the conductive fill has an oxide interface with the P-type conductive layer.
20. An integrated circuit structure, comprising:
a first vertical arrangement of horizontal nanowires;
a second vertical arrangement of horizontal nanowires;
a first gate stack over the first vertical arrangement of horizontal nanowires, the first gate stack having a P-type conductive layer on a first gate dielectric, the P-type conductive layer comprising molybdenum and nitrogen, wherein the P-type conductive layer comprises an atomic concentration of molybdenum and nitrogen of greater than 80%, with a ratio of molybdenum to nitrogen in a range of 6:1 to 1:1; and
a second gate stack over the second vertical arrangement of horizontal nanowires, the second gate stack having an N-type conductive layer on a second gate dielectric.
21. An integrated circuit structure, comprising:
a first vertical arrangement of horizontal nanowires;
a second vertical arrangement of horizontal nanowires;
a first gate stack over the first vertical arrangement of horizontal nanowires, the first gate stack having a P-type conductive layer on a first gate dielectric comprising a high-k dielectric layer on a first dipole material layer, the P-type conductive layer comprising molybdenum and nitrogen; and
a second gate stack over the second vertical arrangement of horizontal nanowires, the second gate stack having an N-type conductive layer on a second gate dielectric comprising the high-k dielectric layer on a second dipole material layer, wherein one of the first or the second dipole layer has a thickness in the range of 1-3 Angstroms.
22. An integrated circuit structure, comprising:
a first vertical arrangement of horizontal nanowires;
a second vertical arrangement of horizontal nanowires;
a first gate stack over the first vertical arrangement of horizontal nanowires, the first gate stack having a P-type conductive layer on a first gate dielectric comprising a high-k dielectric layer on a first dipole material layer, the P-type conductive layer comprising molybdenum and nitrogen; and
a second gate stack over the second vertical arrangement of horizontal nanowires, the second gate stack having an N-type conductive layer on a second gate dielectric comprising the high-k dielectric layer on a second dipole material layer, wherein one of the first or the second dipole layer has a thickness in the range of 4-6 Angstroms.
23. An integrated circuit structure, comprising:
a first vertical arrangement of horizontal nanowires;
a second vertical arrangement of horizontal nanowires;
a first gate stack over the first vertical arrangement of horizontal nanowires, the first gate stack having a first conductive layer on a first gate dielectric, the first conductive layer comprising molybdenum and nitrogen, wherein the first conductive layer comprises an atomic concentration of molybdenum and nitrogen of greater than 80%, with a ratio of molybdenum to nitrogen in a range of 6:1 to 1:1; and
a second gate stack over the second vertical arrangement of horizontal nanowires, the second gate stack having a second conductive layer on a second gate dielectric.