Semiconductor device and memory device
A semiconductor device having favorable electrical characteristics is provided. The semiconductor device includes an oxide semiconductor, a first insulator in contact with the oxide semiconductor, and a second insulator in contact with the first insulator. The first insulator includes excess oxygen. The second insulator has a function of trapping or fixing hydrogen. Hydrogen in the oxide semiconductor is bonded to the excess oxygen. The hydrogen bonded to the excess oxygen passes through the first insulator and is trapped or fixed in the second insulator. The excess oxygen bonded to the hydrogen remains in the first insulator as the excess oxygen.
1. A semiconductor device comprising:
a source electrode and a drain electrode of a transistor over a first insulator;
an oxide semiconductor of the transistor over the first insulator;
a gate insulator over the oxide semiconductor and between the source electrode and the drain electrode;
a gate electrode over the gate insulator and between the source electrode and the drain electrode;
a second insulator over the source electrode and the drain electrode and comprising an opening between the source electrode and the drain electrode;
a third insulator over and in contact with the second insulator;
a fourth insulator over and in contact with the third insulator;
a fifth insulator over and in contact with the fourth insulator;
a first wiring electrically connected to one of the source electrode and the drain electrode; and
a second wiring electrically connected to the other of the source electrode and the drain electrode,
wherein the oxide semiconductor is positioned inside the opening of the second insulator,
wherein the fourth insulator overlaps with the oxide semiconductor, the gate insulator, and the gate electrode,
wherein the first insulator and the fourth insulator are in contact with each other in each of a first region and a second region where the second insulator and the third insulator do not exist,
wherein the fourth insulator and the fifth insulator are in contact with each other in each of the first region and the second region, and
wherein the first wiring comprises a region overlapping with the first region with a sixth insulator interposed therebetween, and wherein the second wiring comprise a region overlapping with the second region with the sixth insulator interposed therebetween.
2. The semiconductor device according to claim 1 ,
wherein the second insulator comprises excess oxygen,
wherein the third insulator is configured to trap or fix hydrogen, and
wherein the fourth insulator has a barrier property against hydrogen.
3. The semiconductor device according to claim 1 ,
wherein the oxide semiconductor comprises indium, gallium, and zinc.
4. The semiconductor device according to claim 1 ,
wherein the second insulator comprises silicon oxynitride, and
wherein the third insulator comprises aluminum oxide.
5. The semiconductor device according to claim 1 ,
wherein the fourth insulator comprises silicon nitride.