IP Library › Granted Patent US 12,052,522
Granted Patent B2
US 12,052,522 · App. 17/417,208 · Granted Jul 30, 2024

Solid-state imaging apparatus and electronic device

Inventors: Mamoru Sato (Kanagawa, JP); Akihiko Kato (Tokyo, JP); Eriko Kato (Kanagawa, JP)
Assignee: Sony Semiconductor Solutions Corporation
H04N25/709H01L27/14603H01L27/14612H01L27/14643H04N25/75
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Quick Facts
Patent No.
US 12,052,522
App. No.
17/417,208
Granted
Jul 30, 2024
Kind
B2
Abstract

A light detecting device includes: one or more switch transistors, a first pixel including a first floating diffusion region coupled to a first photoelectric converter through a first transfer transistor, and a first amplification transistor coupled to the first floating diffusion region, a second pixel including a second floating diffusion region coupled to a second photoelectric converter through a second transfer transistor, and a second amplification transistor coupled to the second floating diffusion region, and a third pixel including a third floating diffusion region coupled to a third photoelectric converter through a third transfer transistor, and a third amplification transistor coupled to the third floating diffusion region. A pixel signal is differentially amplified by the first and third amplification transistors. The first and second floating diffusion regions are selectively connected to each other via one of the one or more switch transistors.

Claims (100)

1. A light detecting device comprising:

one or more switch transistors;

a first pixel including

a first photoelectric converter,

a first floating diffusion region coupled to the first photoelectric converter through a first transfer transistor, and

a first amplification transistor coupled to the first floating diffusion region;

a second pixel in a column in which the first pixel is disposed, the second pixel including

a second photoelectric converter,

a second floating diffusion region coupled to the second photoelectric converter through a second transfer transistor, and

a second amplification transistor coupled to the second floating diffusion region; and

a third pixel in the column, the third pixel including

a third photoelectric converter,

a third floating diffusion region coupled to the third photoelectric converter through a third transfer transistor, and

a third amplification transistor coupled to the third floating diffusion region,

wherein a pixel signal is differentially amplified by the first amplification transistor and the third amplification transistor, and

wherein the first floating diffusion region and the second floating diffusion region are selectively connected to each other via one of the one or more switch transistors.

2. The light detecting device according to claim 1 , further comprising:

a plurality of reset transistors, wherein the plurality of reset transistors includes

a first reset transistor configured to reset the first floating diffusion region,

a second reset transistor configured to reset the second floating diffusion region, and

a third reset transistor configured to reset the third floating diffusion region.

3. The light detecting device according to claim 2 , wherein

a source of the first reset transistor or a drain of the first reset transistor is coupled to a power supply voltage, and

a source of the third reset transistor or a drain of the third reset transistor is coupled to a first voltage line that provides a first voltage different from the power supply voltage.

4. The light detecting device according to claim 1 , further comprising:

a fourth pixel in the column, the fourth pixel including

a fourth photoelectric converter,

a fourth floating diffusion region coupled to the fourth photoelectric converter through a fourth transfer transistor, and

a fourth amplification transistor coupled to the fourth floating diffusion region,

wherein the third floating diffusion region and the fourth floating diffusion region are selectively connected to each other via a second one of the one or more switch transistors.

5. The light detecting device according to claim 1 , further comprising:

a current supply (VCOM) line that is disposed adjacent to the column; and

an output signal (VSL) line that is disposed adjacent to the column.

6. The light detecting device according to claim 5 ,

wherein the current supply line is disposed between the first amplification transistor and a fourth amplification transistor of a fourth pixel, the fourth pixel disposed in an adjacent column to the column.

7. The light detecting device according to claim 5 , wherein

the first amplification transistor is coupled to the current supply line,

the second amplification transistor is coupled to the current supply line, and

the third amplification transistor is coupled to the current supply line.

8. The light detecting device according to claim 7 , wherein

the first amplification transistor is coupled to the output signal line, and

the second amplification transistor is coupled to the output signal line.

9. The light detecting device according to claim 8 , further comprising:

a second output signal (VSLR) line that is disposed adjacent to the column, the second output signal line being different than the output signal line,

wherein the third amplification transistor is coupled to the second output signal line.

10. The light detecting device according to claim 1 , wherein

the first pixel includes a first switch transistor from the one or more switch transistors, the first switch transistor being the one of the one or more switch transistors that is configured to electrically connect the first floating diffusion region to the second floating diffusion region,

the second pixel includes a second switch transistor from the one or more switch transistors, the second switch transistor configured to electrically connect the second floating diffusion region to a fourth floating diffusion region, and

the third pixel includes a third switch transistor from the one or more switch transistors, the third switch transistor configured to electrically connect the third floating diffusion region to a fifth floating diffusion region.

11. The light detecting device according to claim 1 , further comprising:

a pixel array including the first pixel, the second pixel, and the third pixel,

wherein the third pixel is a reference pixel that is positioned at an edge of the pixel array.

12. An electronic apparatus comprising:

a light detecting device including

one or more switch transistors;

a first pixel including

a first photoelectric converter,

a first floating diffusion region coupled to the first photoelectric converter through a first transfer transistor, and

a first amplification transistor coupled to the first floating diffusion region;

a second pixel in a column in which the first pixel is disposed, the second pixel including

a second photoelectric converter,

a second floating diffusion region coupled to the second photoelectric converter through a second transfer transistor, and

a second amplification transistor coupled to the second floating diffusion region; and

a third pixel in the column, the third pixel including

a third photoelectric converter,

a third floating diffusion region coupled to the third photoelectric converter through a third transfer transistor, and

a third amplification transistor coupled to the third floating diffusion region,

wherein a pixel signal is differentially amplified by the first amplification transistor and the third amplification transistor, and

wherein the first floating diffusion region and the second floating diffusion region are selectively connected to each other via one of the one or more switch transistors.

13. The electronic apparatus according to claim 12 , wherein the light detecting device further includes

a plurality of reset transistors, wherein the plurality of reset transistors includes

a first reset transistor configured to reset the first floating diffusion region,

a second reset transistor configured to reset the second floating diffusion region, and

a third reset transistor configured to reset the third floating diffusion region.

14. The electronic apparatus according to claim 13 , wherein

a source of the first reset transistor or a drain of the first reset transistor is coupled to a power supply voltage, and

a source of the third reset transistor or a drain of the third reset transistor is coupled to a first voltage line that provides a first voltage different from the power supply voltage.

15. The electronic apparatus according to claim 12 , wherein the light detecting device further includes

a fourth pixel in the column, the fourth pixel including

a fourth photoelectric converter,

a fourth floating diffusion region coupled to the fourth photoelectric converter through a fourth transfer transistor, and

a fourth amplification transistor coupled to the fourth floating diffusion region,

wherein the third floating diffusion region and the fourth floating diffusion region are selectively connected to each other via a second one of the one or more switch transistors.

16. The electronic apparatus according to claim 12 , wherein the light detecting device further includes

a current supply (VCOM) line that is disposed adjacent to the column; and

an output signal (VSL) line that is disposed adjacent to the column.

17. The electronic apparatus according to claim 16 , wherein

the first amplification transistor is coupled to the current supply line,

the second amplification transistor is coupled to the current supply line, and

the third amplification transistor is coupled to the current supply line.

18. The electronic apparatus according to claim 17 , wherein

the first amplification transistor is coupled to the output signal line, and

the second amplification transistor is coupled to the output signal line.

19. The electronic apparatus according to claim 12 , wherein

the first pixel includes a first switch transistor from the one or more switch transistors, the first switch transistor being the one of the one or more switch transistors that is configured to electrically connect the first floating diffusion region to the second floating diffusion region,

the second pixel includes a second switch transistor from the one or more switch transistors, the second switch transistor configured to electrically connect the second floating diffusion region to a fourth floating diffusion region, and

the third pixel includes a third switch transistor from the one or more switch transistors, the third switch transistor configured to electrically connect the third floating diffusion region to a fifth floating diffusion region.

20. The electronic apparatus according to claim 12 , wherein the light detecting device further includes

a pixel array including the first pixel, the second pixel, and the third pixel, and

wherein the third pixel is a reference pixel that is positioned at an edge of the pixel array.

Assignments (1)
ASSIGNMENT OF ASSIGNOR'S INTEREST Recorded Jun 22, 2021
From: SATO, MAMORU; KATO, AKIHIKO; KATO, ERIKO
To: SONY SEMICONDUCTOR SOLUTIONS CORPORATION
Reel/Frame 056619/0699 →
Priority Claims (1)
JP 2019-093923 · May 17, 2019 · national
Continuity (1)
Related Publication 20220060646A1 · Feb 24, 2022