Image sensor including color separating lens array and electronic apparatus including the image sensor
Provided is an image sensor including a color separating lens array. The image sensor includes: a sensor substrate including a first pixel configured to sense light of a first wavelength and a second pixel configured to sense light of a second wavelength; a transparent spacer layer on the sensor substrate; and a color separating lens array on the spacer layer, wherein the color separating lens array condenses the light of the first wavelength toward the first pixel, and includes a first lens layer on the spacer layer, a second lens layer on the first lens layer, and an etch prevention layer between the first lens layer and the second lens layer.
1. A method of manufacturing an image sensor, the method comprising:
forming a spacer layer on a sensor substrate, the sensor substrate including a first pixel, configured to sense light of a first wavelength, and a second pixel configured to sense light of a second wavelength;
forming a first lens layer on the spacer layer;
forming a first etch prevention layer on the first lens layer;
forming a first dielectric layer on the first etch prevention layer;
forming an engraved pattern in the first dielectric layer; and
forming a second lens layer by filling a first high-refractive material in the engraved pattern.
2. The method of claim 1 , wherein the first etch prevention layer has a thickness of about 3 nm to about 30 nm.
3. The method of claim 1 , wherein the first etch prevention layer has a thickness of about 5 nm to about 15 nm.
4. The method of claim 1 , wherein the first etch prevention layer includes HfO 2 .
5. The method of claim 1 , wherein the forming of the first lens layer comprises:
forming a second etch prevention layer on the spacer layer;
forming a second dielectric layer on the first etch prevention layer;
forming an engraved pattern in the second dielectric layer; and
filling a second high-refractive material in the engraved pattern in the second dielectric layer.
6. The method of claim 1 , further comprising forming an anti-reflection layer on the second lens layer.
7. The method of claim 6 , wherein the anti-reflection layer includes a SiO 2 layer.
8. The method of claim 6 , wherein the anti-reflection layer has a thickness of about 80 nm to about 120 nm.
9. The method of claim 6 , wherein the forming of the anti-reflection layer includes forming a first anti-reflection layer, and forming a second anti-reflection layer on the first anti-reflection layer.
10. The method of claim 9 , wherein the first anti-reflection layer includes SiO 2 and the second anti-reflection layer includes Si 3 N 4 .
11. The method of claim 9 , wherein the first anti-reflection layer has a thickness of about 80 nm to about 120 nm and the second anti-reflection layer has a thickness of about 20 nm to about 60 nm.