Semiconductor storage device
A semiconductor storage device includes a semiconductor substrate and a conductive layer separated from the semiconductor substrate in a first direction. The conductive layer extends in a second direction parallel to the semiconductor substrate. A semiconductor layer extends in the first direction through the conductive layer. A first contact extends in the first direction and is connected to a surface of the conductive layer facing away from the semiconductor substrate. A first insulating layer extends in the first direction, and a second insulating layer extends along the first insulating layer in the first direction. Each of the first and second insulating layers entirely overlaps with the first contact when viewed in the first direction.
1. A semiconductor storage device, comprising:
a semiconductor substrate having a first surface;
a conductive layer spaced from the semiconductor substrate in a first direction intersecting the first surface, the conductive layer extending in a second direction along the first surface of the semiconductor substrate;
a semiconductor layer extending in the first direction through the conductive layer;
a first contact extending in the first direction and connected to a surface of the conductive layer facing away from the semiconductor substrate;
a second contact extending in the first direction through the conductive layer, a length of the second contact in the first direction being greater than a length of the first contact in the first direction;
a first insulating layer extending in the first direction, a length of the first insulating layer in the first direction being greater than a length of the first insulating layer in the second direction; and
a second insulating layer extending along the first insulating layer in the first direction, a length of the second insulating layer in the first direction being greater than a length of the second insulating layer in the second direction,
wherein each of the first and second insulating layers entirely overlaps with the first contact when viewed in the first direction.
2. The semiconductor storage device according to claim 1 , further comprising:
a third insulating layer extending along the first and second insulating layers in the first direction, wherein
the third insulating layer entirely overlaps with the first contact when viewed in the first direction.
3. The semiconductor storage device according to claim 2 , wherein
the first and second insulating layers are aligned in the second direction, and
the first and third insulating layers are aligned in a third direction intersecting the first surface, the third direction being different from the second direction.
4. The semiconductor storage device according to claim 2 , wherein the first, second, and third insulating layers are aligned in the second direction.
5. The semiconductor storage device according to claim 2 , wherein a distance between the first and second insulating layers in a direction along the first surface is equal to a distance between the first and third insulating layers in a direction along the first surface.
6. The semiconductor storage device according to claim 1 , wherein a cross-sectional shape of the semiconductor layer in a plane perpendicular to the first direction is same as a cross-sectional shape of the first insulating layer in the plane.
7. The semiconductor storage device according to claim 6 , wherein a cross-sectional shape of the second insulating layer in the plane is same as the cross-sectional shape of the first insulating layer in the plane.
8. The semiconductor storage device according to claim 1 , wherein a cross-sectional shape of the first contact in a plane perpendicular to the first direction is same as a cross-sectional shape of the second contact in the plane.
9. The semiconductor storage device according to claim 1 , wherein a cross-sectional shape of the first contact in a plane perpendicular to the first direction is different from a cross-sectional shape of the second contact in the plane.
10. The semiconductor storage device according to claim 9 , wherein the cross-sectional shape of the first contact is a non-circular shape and the cross-sectional shape of the second contact is a circular shape.
11. The semiconductor storage device according to claim 1 , further comprising:
a fourth insulating layer extending within the first contact in the first direction.
12. The semiconductor storage device according to claim 11 , wherein
the first insulating layer entirely overlaps with the fourth insulating layer when viewed in the first direction, and
the second insulating layer only partially overlaps with the fourth insulating layer when viewed in the first direction.
13. The semiconductor storage device according to claim 1 , further comprising:
a plurality of fifth insulating layers spaced from each other along the first direction, each of the fifth insulating layers being adjacent to a side surface of the first contact.
14. The semiconductor storage device according to claim 1 , wherein
a plurality of memory cell transistors is formed along the semiconductor layer, and
the conductive layer is a gate electrode of one of the memory cell transistors.